Motorola MPSH17RLRA, MPSH17 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
15 Vdc
Collector–Base Voltage V
CBO
20 Vdc
Emitter–Base Voltage V
EBO
3.0 Vdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
350
2.81
mW
mW/°C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
(Printed Circuit Board Mounting)
R
q
JA
357 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V
(BR)CEO
15 — — Vdc
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V
(BR)CBO
20 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V
(BR)EBO
3.0 — — Vdc
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
I
CBO
— — 100 nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPSH17/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 2
TO–92 (TO–226AA)
1
2
3
Motorola Preferred Device
Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER
MPSH17
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 mAdc, VCE = 10 Vdc)
h
FE
25 — 250 —
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
V
CE(sat)
— — 0.5 —
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
f
T
800 — — MHz
Collector–Base Capacitance
(VCB = 10 Vdc, f = 1.0 MHz)
C
cb
0.3 — 0.9 pF
Small–Signal Current Gain
(IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
h
fe
30 — — —
Noise Figure
(IC = 5.0 mAdc, VCC = 12 Vdc, RS = 50 ohms, f = 200 MHz)
NF — — 6.0 dB
FUNCTIONAL TEST
Amplifier Power Gain
(IC = 5.0 mAdc, VCC = 12 Vdc, RS = 50 ohms, f = 200 MHz)
G
pe
— 24 — dB
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