Motorola MPSA70, MPSA70RLRM Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
–40 Vdc
Emitter–Base Voltage V
EBO
–4.0 Vdc
Collector Current — Continuous I
C
–100 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200 °C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(IC = –1.0 mAdc, IB = 0)
V
(BR)CEO
–40 — Vdc
Emitter–Base Breakdown Voltage
(IE = –100 µAdc, IC = 0)
V
(BR)EBO
–4.0 — Vdc
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
I
CBO
— –100 nAdc
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
Order this document
by MPSA70/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
MPSA70
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –5.0 mAdc, VCE = –10 Vdc)
h
FE
40 400 —
Collector–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
V
CE(sat)
— –0.25 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –5.0 mAdc, VCE = –10 Vdc, f = 100 MHz)
f
T
125 — MHz
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
C
obo
— 4.0 pF
MPSA70
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL NOISE CHARACTERISTICS
(VCE = –ā5.0 Vdc, TA = 25°C)
Figure 1. Noise Voltage
f, FREQUENCY (Hz)
5.0
7.0
10
3.0
Figure 2. Noise Current
f, FREQUENCY (Hz)
1.0
10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.1
BANDWIDTH = 1.0 Hz
RS
≈
0
IC = 10 µA
100 µA
e
n
, NOISE VOLTAGE (nV)
I
n
, NOISE CURRENT (pA)
30 µA
BANDWIDTH = 1.0 Hz
RS
≈ ∞
IC = 1.0 mA
300 µA
100 µA
30 µA
10 µA
10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
2.0
1.0 mA
0.2
300 µA
NOISE FIGURE CONTOURS
(VCE = –ā5.0 Vdc, TA = 25°C)
500 k
100
200
500
1.0 k
10 k
5.0 k
20 k
50 k
100 k
200 k
2.0 k
1.0 M
500 k
100
200
500
1.0 k
10 k
5.0 k
20 k
50 k
100 k
200 k
2.0 k
1.0 M
Figure 3. Narrow Band, 100 Hz
IC, COLLECTOR CURRENT (µA)
Figure 4. Narrow Band, 1.0 kHz
IC, COLLECTOR CURRENT (µA)
10
0.5 dB
BANDWIDTH = 1.0 Hz
R
S
, SOURCE RESISTANCE (OHMS)
R
S
, SOURCE RESISTANCE (OHMS)
Figure 5. Wideband
IC, COLLECTOR CURRENT (µA)
10
10 Hz to 15.7 kHz
R
S
, SOURCE RESISTANCE (OHMS)
Noise Figure is Defined as:
NF+20 log
10
ƪ
e
n
2
)
4KTRS)
I
n
2
R
S
2
4KTR
S
ƫ
1ń2
= Noise Voltage of the T ransistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
= Boltzman’s Constant (1.38 x 10
–23
j/°K)
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)
e
n
I
n
K
T
R
S
1.0 dB
2.0 dB
3.0 dB
20 30 50 70 100 200 300 500 700 1.0 k 10 20 30 50 70 100 200 300 500 700 1.0 k
500 k
100
200
500
1.0 k
10 k
5.0 k
20 k
50 k
100 k
200 k
2.0 k
1.0 M
20 30 50 70 100 200 300 500 700 1.0 k
BANDWIDTH = 1.0 Hz
5.0 dB
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
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