Motorola MPSA20 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
40 Vdc
Collector–Base Voltage V
CBO
4.0 Vdc
Collector Current — Continuous I
C
100 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
(1)
200 °C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(2)
(IC = 1.0 mAdc, IB = 0)
V
(BR)CEO
40 — Vdc
Emitter–Base Breakdown Voltage
(IE = 100 µAdc, IC = 0)
V
(BR)EBO
4.0 — Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
I
CBO
— 100 nAdc
1. R
q
JA
is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Order this document
by MPSA20/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
MPSA20
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(2)
(IC = 5.0 mAdc, VCE = 10 Vdc)
h
FE
40 400 —
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
V
CE(sat)
— 0.25 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(2)
(IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
f
T
125 — MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
C
obo
— 4.0 pF
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Figure 1. Turn–On Time Figure 2. Turn–Off Time
EQUIVALENT SWITCHING TIME TEST CIRCUITS
*Total shunt capacitance of test jig and connectors
10 k
+3.0 V
275
CS < 4.0 pF*
10 k
+3.0 V
275
CS < 4.0 pF*
1N916
300 ns
DUTY CYCLE = 2%
+10.9 V
–0.5 V
<1.0 ns
10 < t1 < 500 µs
DUTY CYCLE = 2%
+10.9 V
0
–9.1 V
<1.0 ns
t
1
MPSA20
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
Figure 3. Noise Voltage
f, FREQUENCY (Hz)
5.0
7.0
10
20
3.0
Figure 4. Noise Current
f, FREQUENCY (Hz)
2.0
10 20 50 100 200 500 1 k 2 k 5 k 10 k
100
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
BANDWIDTH = 1.0 Hz
RS = 0
IC = 1.0 mA
100 µA
e
n
, NOISE VOLTAGE (nV)
I
n
, NOISE CURRENT (pA)
30 µA
BANDWIDTH = 1.0 Hz
RS
≈ ∞
10 µA
300 µA
IC = 1.0 mA
300 µA
100 µA
30 µA
10 µA
10 20 50 100 200 500 1 k 2 k 5 k 10 k
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25°C)
Figure 5. Narrow Band, 100 Hz
IC, COLLECTOR CURRENT (µA)
500 k
Figure 6. Narrow Band, 1.0 kHz
IC, COLLECTOR CURRENT (µA)
10
2.0 dB
BANDWIDTH = 1.0 Hz
R
S
, SOURCE RESISTANCE (OHMS)
R
S
, SOURCE RESISTANCE (OHMS)
Figure 7. Wideband
IC, COLLECTOR CURRENT (µA)
10
10 Hz to 15.7 kHz
R
S
, SOURCE RESISTANCE (OHMS)
Noise Figure is defined as:
NF+20 log
10
ǒ
e
n
2
)
4KTRS)
I
n
2
R
S
2
4KTR
S
Ǔ
1ń2
= Noise Voltage of the T ransistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
= Boltzman’s Constant (1.38 x 10
–23
j/°K)
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)
e
n
I
n
K
T
R
S
3.0 dB
4.0 dB
6.0 dB
10 dB
50
100
200
500
1 k
10 k
5 k
20 k
50 k
100 k
200 k
2 k
20 30 50 70 100 200 300 500 700 1 k 10 20 30 50 70 100 200 300 500 700 1 k
500 k
100
200
500
1 k
10 k
5 k
20 k
50 k
100 k
200 k
2 k
1 M
500 k
50
100
200
500
1 k
10 k
5 k
20 k
50 k
100 k
200 k
2 k
20 30 50 70 100 200 300 500 700 1 k
BANDWIDTH = 1.0 Hz
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
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