MOTOROLA MMUN2213LT1, MMUN2213LT3, MMUN2212LT1, MMUN2234LT1, MMUN2235LT1 Datasheet

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• The SOT-23 package can be soldered using wave or

reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die.

• Available in 8 mm embossed tape and reel. Use the

Device Number to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the Device Number to order the13 inch/10,000 unit reel.

MAXIMUM RATINGS

(TA = 25°C unless otherwise noted)

Rating

Symbol Value Unit

Collector-Base Voltage V

CBO

50 Vdc

Collector-Emitter Voltage V

CEO

50 Vdc

Collector Current I

100 mAdc

Total Power Dissipation @ TA = 25°C

(1)

Derate above 25°C

*200

1.6

mW/°C

THERMAL CHARACTERISTICS

Thermal Resistance — Junction-to-Ambient (surface mounted) R

θJA

625 °C/W

Operating and Storage Temperature Range TJ, T

stg

–65 to +150 °C

Maximum Temperature for Soldering Purposes, Time in Solder Bath

260

°C

Sec

DEVICE MARKING AND RESISTOR VALUES

Device Marking R1 (K) R2 (K)

MMUN221 1LT1 MMUN2212LT1 MMUN2213LT1

A8A A8B A8C

10 22 47

MMUN2214LT1

MMUN2215LT1

(2)

MMUN2216LT1

(2)

MMUN2230LT1

(2)

A8D

A8E A8F A8G

4.7 1

∞ ∞

MMUN2231LT1

(2)

MMUN2232LT1

(2)

MMUN2233LT1

(2)

MMUN2234LT1

(2)

A8H

A8J A8K A8L

2.2

4.7

2.2

4.7 47 47

1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.

2. New devices. Updated curves to follow in subsequent data sheets.

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

(Replaces MMUN2211T1/D)

Order this document

by MMUN2211LT1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

 Motorola, Inc. 1996

NPN SILICON

BIAS RESISTOR

TRANSISTOR

Motorola Preferred Devices

CASE 318-08, STYLE 6

SOT-23 (TO-236AB)

MMUN2211LT1

SERIES

PIN 3 COLLECTOR (OUTPUT)

PIN 2 EMITTER (GROUND)

PIN 1 BASE (INPUT)

MMUN2211L T1 SERIES

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current (VCB = 50 V, IE = 0) I

CBO

— — 100 nAdc

Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) I

CEO

— — 500 nAdc

Emitter-Base Cutoff Current MMUN221 1LT1

(VEB = 6.0 V, IC = 0) MMUN2212LT1

MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1

EBO

— — — — — — — — — — —

0.5

0.2

0.1

0.2

0.9

1.9

4.3

2.3

1.5

0.18

0.13

mAdc

Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) V

(BR)CBO

50 — — Vdc

Collector-Emitter Breakdown Voltage

(3)

(IC = 2.0 mA, IB = 0) V

(BR)CEO

50 — — Vdc

ON CHARACTERISTICS

(3)

DC Current Gain MMUN221 1LT1

(VCE = 10 V, IC = 5.0 mA) MMUN2212LT1

MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1

35 60 80

80 160 160

3.0

8.0 15 80 80

60 100 140 140 350 350

5.0 15 30

200 150

— — — — — — — — — — —

Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)

(IC = 10 mA, IB = 5 mA) MMUN2230LT1/MMUN2231LT1 (IC = 10 mA, IB = 1 mA) MMUN2215LT1/MMUN2216LT1 MMUN2232LT1/MMUN2233LT1/MMUN2234LT1

CE(sat)

— — 0.25 Vdc

Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k Ω) MMUN2211LT1

MMUN2212LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k Ω) MMUN2213LT1

— — — — — — — — — — —

0.2

Vdc

Output Voltage (of f) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k Ω)

(VCC = 5.0 V, VB = 0.050 V , RL = 1.0 k Ω) MMUN2230LT1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k Ω) MMUN2215LT1

MMUN2216LT1 MMUN2233LT1

4.9 — — Vdc

3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

MMUN2211L T1 SERIES

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS

(3)

Input Resistor MMUN221 1LT1

MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1

R1 7.0

15.4

32.9

7.0

3.3

0.7

1.5

3.3

15.4

10 22 47 10 10

4.7

1.0

2.2

4.7

4.7 22

28.6

61.1 13 13

6.1

1.3

2.9

6.1

28.6

k Ω

Resistor Ratio MMUN221 1LT1/MMUN2212LT1/MMUN2213LT1

MMUN2214L T1 MMUN2215L T1/MMUN2216LT1 MMUN2230L T1/MMUN2231LT1/MMUN2232LT1 MMUN2233L T1 MMUN2234L T1

R1/R2 0.8

0.17 —

0.8

0.055

0.38

1.0

0.21 —

1.0

0.1

0.47

1.2

0.25 —

1.2

0.185

0.56

3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

MMUN2211L T1 SERIES

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

MMUN2211LT1

1002030

IC, COLLECTOR CURRENT (mA)

0.1

, INPUT VOLTAGE (VOLTS)

TA= –25°C

75°C

25°C

0.1

0.01

0.001 020 406080

IC, COLLECTOR CURRENT (mA)

CE(sat)

, MAXIMUM COLLECTOR VOLTAGE (VOLTS)

1000

100

1 10 100

IC, COLLECTOR CURRENT (mA)

, DC CURRENT GAIN (NORMALIZED)

TA=75°C

25°C

–25°C

TA= –25°C

25°C

IC/IB = 10

75°C

25°C

TA= –25°C

100

0.1

0.01

0.001 01234

Vin, INPUT VOLTAGE (VOLTS)

, COLLECTOR CURRENT (mA)

5678910

010203040

VR, REVERSE BIAS VOLTAGE (VOLTS)

, CAPACITANCE (pF)

75°C

f = 1 MHz lE = 0 V TA = 25°C

VO = 5 V

VCE = 10 V

VO = 0.2 V

Figure 1. Derating Curve

250

200

150

100

–50 0 50 100 150

TA, AMBIENT TEMPERATURE (°C)

, POWER DISSIPATION (MILLIWATTS)

θJA

= 625°C/W

Figure 2. V

CE(sat)

versus I

Figure 3. DC Current Gain

Figure 4. Output Capacitance

Figure 5. V

CE(sat)

versus I

Figure 6. V

CE(sat)

versus I

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