MOTOROLA MMSF7P03HD User Manual

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SEMICONDUCTOR TECHNICAL DATA

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Medium Power Surface Mount Products

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Single HDTMOS are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density TMOS process.
HDTMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives.

• Low R

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Miniature SO–8 Surface Mount Package — Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• I

Specified at Elevated Temperature

DSS

• Mounting Information for SO–8 Package Provided

Provides Higher Efficiency and Extends Battery Life

DS(on)



Motorola Preferred Device

SINGLE TMOS

POWER MOSFET

30 VOLTS

R



D

CASE 751–05, Style 13

G

S

Source
Source
Source

Gate

DS(on)

SO–8

1
2
3
4

= 35 m

8
7
6
5

W

Drain
Drain
Drain
Drain

Top View

MAXIMUM RATINGS

Drain–to–Source Voltage V
Gate–to–Source Voltage — Continuous V
Drain Current — Continuous @ TA = 25°C

Drain Current — Single Pulse (tp ≤ 10 µs)

Source Current — Continuous @ TA = 25°C I
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range TJ, T
Single Pulse Drain–to–Source Avalanche Energy – STAR TING TJ = 25°C

(VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 32 Vdc, IL = 10 Apk, L = 10 mH, RG = 25 W)
Thermal Resistance — Junction–to–Ambient R
Maximum T emperature for Soldering T 260 °C

(TJ = 25°C unless otherwise noted)

Rating

(1)

Symbol Value Unit

DSS

GS

I

I

DM

P

E

AS

θJA

D

S

D

stg

30 Vdc

± 20 Vdc

7.0
50

2.3 Adc

2.5 Watts

– 55 to 150 °C

5000 mJ

50 °C/W

Adc
Apk

DEVICE MARKING

S7P03

(1) When mounted on 1 inch square FR–4 or G–10 (VGS = 10 V @ 10 seconds)

ORDERING INFORMATION

Device Reel Size Tape Width Quantity

MMSF7P03HDR2 13″ 12 mm embossed tape 2500 units

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.

REV 2

Motorola TMOS Power MOSFET Transistor Device Data

 Motorola, Inc. 1997

1

MMSF7P03HD

)

f = 1.0 MHz)

V

G

)

V

G

)

(

DS

,

D

,

(

S

,

GS

,

ELECTRICAL CHARACTERISTICS

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)
T emperature Coef ficient (Positive)

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) I

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 5.3 Adc)
(VGS = 4.5 Vdc, ID = 2.0 Adc)

Forward Transconductance (VDS = 15 Vdc, ID = 2.5 Adc) g

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge

(See Figure 8)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (IS = 2.3 Adc, VGS = 0 Vdc)

Reverse Recovery Time

Reverse Recovery Stored Charge Q

(1) Negative sign for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(3) Switching characteristics are independent of operating junction temperature.

(2)

(TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

(VDS = 24 Vdc, VGS = 0 V,

f = 1.0 MHz

(3)

(VDD = 15 Vdc, ID = 1.0 Adc,

(VDD = 15 Vdc, ID = 1.0 Adc,

(VDS = 10 Vdc, ID = 4.9 Adc,

(IS = 2.3 Adc, VGS = 0 Vdc, TJ = 125°C)

(IS = 4.9 Adc, VGS = 0 Vdc,

= 4.5 Vdc,

GS

RG = 10 Ω)

= 10 Vdc,

GS

RG = 6.0 Ω)

VGS = 6.0 Vdc)

dIS/dt = 100 A/µs)

(1)

V

(BR)DSS

I

DSS

GSS

V

GS(th)

R

DS(on)

FS

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

V

SD

t

rr

t

a

t

b

RR

30 — —

—
—

— — 100 nAdc

1.0 — —

—
—

— 12 — Mhos

— 1200 1680 pF
— 580 810
— 160 220

— 23.5 47
— 42.7 85.4
— 57.4 114.8
— 53.6 107.2
— 16 32
— 15.2 30.6
— 99.7 199.4
— 55.2 110.4

T
1
2
3

— 37.9 75.8
— 4.2 —
— 11.5 —
— 7.6 —

—
—

— 47.9 —
— 27 —
— 21 —
— 0.052 — µC

—
—

26
42

0.76

0.61

1.0
25

35
50

1.2

—

Vdc

µAdc

Vdc

m

W

ns

nC

Vdc

ns

2

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

MMSF7P03HD

12

10 V

6.0 V

10

4.5 V

4.3 V

8.0

4.1 V

6.0

4.0

, DRAIN CURRENT (AMPS)

D

I

2.0

0

0 0.2 0.4 0.6 2.0

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

3.9 V

3.7 V

3.5 V

0.8 1.0 3.01.2 1.4 3.5

TJ = 25°C

VGS = 3.3 V

3.1 V

2.9 V

2.7 V

2.5 V

1.6 1.8

Figure 1. On–Region Characteristics

0.30

0.25

0.20

0.15

TJ = 25°C
ID = 7.0 A

12

10

8.0

6.0

4.0

, DRAIN CURRENT (AMPS)

D

I

2.0

0

1.5 2.0 2.5 4.0

VDS ≥ 10 V

100°C

25°C

TJ = – 55°C

VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.050
TJ = 25°C

0.045

0.040

0.035

VGS = 4.5 V

0.10

0.05

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

0

DS(on)

R

3.0 5.0 7.0 9.0

2.0 4.0 10
VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)

6.0 8.0

Figure 3. On–Resistance versus

Gate–to–Source V oltage

1.6
VGS = 10 V

1.4

1.2

1.0

0.8

(NORMALIZED)

0.6

0.4

, DRAIN–TO–SOURCE RESIST ANCE

0.2

DS(on)

R

0

–50 –25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (

°

C)

0.030
10 V

0.025

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

0.020

DS(on)

1.0 2.0 3.0 9.0

R

4.0 5.0 6.0 7.0 8.0

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

1000

VGS = 0 V

TJ = 125°C

100

10

100°C

15 25

, LEAKAGE (nA)

10

DSS

I

1.0
0 5.0 20 30

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

Figure 5. On–Resistance Variation with

Temperature

Motorola TMOS Power MOSFET Transistor Device Data

Figure 6. Drain–to–Source Leakage

Current versus Voltage

3