Motorola MMSF7N03ZR2 Datasheet

1

Motorola TMOS Power MOSFET Transistor Device Data

  

Medium Power Surface Mount Products

   ! 
   
    

EZFETs are an advanced series of power MOSFETs which utilize
Motorola’s High Cell Density TMOS process and contain monolithic
back–to–back zener diodes . These zener diodes provide protection
against ESD and unexpected transients. These miniature surface
mount MOSFETs feature ultra low R

DS(on)

amd true logic level
performance. They are capable of withstanding high energy in the
avalanche and commutation modes and the drain–to–source diode
has a very low reverse recovery time. EZFET devices are designed
for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can als o be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives.

• Zener Protected Gates Provide Electrostatic Discharge Protection

• Ultra Low R

DS(on)

Provides Higher Efficiency and Extends Battery Life

• Designed to withstand 200V Machine Model and 2000V Human Body Model

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Miniature SO–8 Surface Mount Package — Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• I

DSS

Specified at Elevated Temperature

• Mounting Information for SO–8 Package Provided

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted)

Rating

Symbol Value Unit

Drain–to–Source Voltage V

DSS

30 Vdc

Drain–to–Gate Voltage (RGS = 1.0 MΩ) V

DGR

30 Vdc

Gate–to–Source Voltage — Continuous V

GS

± 15 Vdc

Drain Current — Continuous @ TA = 25°C (1)

Drain Current — Continuous @ TA = 70°C (1)
Drain Current — Pulsed Drain Current (3)

I

D

I

D

I

DM

7.5

5.6
60

Adc

Apk

Total Power Dissipation @ TA = 25°C (1)

Linear Derating Factor (1)

P

D

2.5
20

Watts

mW/°C

Total Power Dissipation @ TA = 25°C (2)

Linear Derating Factor (2)

P

D

1.6
12

Watts

mW/°C

Operating and Storage Temperature Range TJ, T

stg

– 55 to 150 °C

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 15 Apk, L = 4.0 mH, RG = 25 Ω)

E

AS

450

mJ

Thermal Resistance — Junction to Ambient (1)

— Junction to Ambient (2)

R

θJA

50
80

°C/W

(1) When mounted on 1 inch square FR–4 or G–10 board (VGS = 10 V, @ 10 Seconds)
(2) When mounted on 1 inch square FR–4 or G–10 board (VGS = 10 V , @ Steady State)
(3) Repetitive rating; pulse width limited by maximum junction temperature.

DEVICE MARKING ORDERING INFORMATION

Device Reel Size Tape Width Quantity

S7N03Z

MMSF7N03ZR2 13″ 12 mm embossed tape 2500 units

Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics— are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.

HDTMOS and EZFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the
Bergquist Company.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MMSF7N03Z/D

 Motorola, Inc. 1996





SINGLE TMOS

POWER MOSFET

7.5 AMPERES
30 VOLTS

R

DS(on)

= 0.030 OHM

CASE 751–05, Style 12

SO–8

Motorola Preferred Device

Source
Source
Source

Gate

1
2
3
4

8
7
6
5

Top View

Drain
Drain
Drain
Drain

D

S

G

MMSF7N03Z

2

Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS

(TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage (Cpk ≥ 2.0) (1) (3)

(VGS = 0 Vdc, ID = 250 µAdc)
T emperature Coef ficient (Positive)

V

(BR)DSS

30
—

—
35

—
—

Vdc

mV/°C

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)

I

DSS

—
—

0.03

0.15

2.0
10

µAdc

Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0) I

GSS

— 1.3 5.0 µAdc

ON CHARACTERISTICS

(1)

Gate Threshold Voltage (Cpk ≥ 2.0) (1) (3)

(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)

V

GS(th)

1.0
—

2.0

5.5

3.0
—

Vdc

mV/°C

Static Drain–to–Source On–Resistance (Cpk ≥ 2.0) (1) (3)

(VGS = 10 Vdc, ID = 7.5 Adc)
(VGS = 4.5 Vdc, ID = 3.8 Adc)

R

DS(on)

—
—

22
30

30
40

mΩ

Forward Transconductance (VDS = 3.0 Vdc, ID = 3.8 Adc) (1) g

FS

4.0 9.5 — Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

C

iss

— 750 1500 pF

Output Capacitance

(VDS = 24 Vdc, VGS = 0 Vdc,

f = 1.0 MHz

)

C

oss

— 340 680

Transfer Capacitance

f = 1.0 MHz)

C

rss

— 45 90

SWITCHING CHARACTERISTICS

(2)

Turn–On Delay Time

t

d(on)

— 40 80 ns

Rise Time

(VDS = 15 Vdc, ID = 5.0 Adc,

t

r

— 90 180

Turn–Off Delay Time

(

DS

,

D

,

VGS = 10 Vdc, RG = 6 Ω) (1)

t

d(off)

— 470 940

Fall Time t

f

— 170 340

Turn–On Delay Time

t

d(on)

— 120 240 ns

Rise Time

(VDD = 15 Vdc, ID = 5.0 Adc,

t

r

— 350 700

Turn–Off Delay Time

(

DD

,

D

,

VGS = 4.5 Vdc, RG = 6 Ω) (1)

t

d(off)

— 430 860

Fall Time t

f

— 140 280

Gate Charge

Q

T

— 34 48 nC

(VDS = 24 Vdc, ID = 5.0 Adc,

Q

1

— 3.5 —

(

DS

,

D

,

VGS = 10 Vdc) (1)

Q

2

— 9.5 —

Q

3

— 6.5 —

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(1)

(IS = 7.5 Adc, VGS = 0 Vdc) (1)

(IS = 7.5 Adc, VGS = 0 Vdc, TJ = 125°C)

V

SD

—
—

0.83

0.67

1.6
—

Vdc

Reverse Recovery Time

t

rr

— 110 —

ns

(IS = 7.5 Adc, VGS = 0 Vdc,

dI

/dt = 100 A/µs) (1

)

t

a

— 22 —

dIS/dt = 100 A/µs)

(1)

t

b

— 90 —

Reverse Recovery Storage Charge Q

RR

— 0.17 — µC

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.

Cpk =

Max limit – Typ

3 x SIGMA

MMSF7N03Z

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

I

DSS

, LEAKAGE (nA)

R

DS(on)

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

R

DS(on)

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

0

0 0.4 1.6 2

0

2

6

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

Figure 1. On–Region Characteristics

I

D

, DRAIN CURRENT (AMPS)

I

D

, DRAIN CURRENT (AMPS)

VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.08

0.1

0

Figure 3. On–Resistance versus

Gate–to–Source Voltage

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

1

100

Figure 5. On–Resistance Variation

with Temperature

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

Figure 6. Drain–to–Source Leakage Current

versus Voltage

VDS ≥ 10 V

TJ = –55°C

25°C

100°C

0.06

8

4

0.02

TJ = 25°C

4

8

10

2

2.6 3 3.4 3.8

0.04

024 810

10

0 5 10 15 30

3.8 V

20 25

0

0.02

0.04

6

24 86

10

VGS, GATE–T O–SOURCE VOLT AGE (VOLTS)

6

10 V

VGS = 4.5

TJ = 25°C

R

DS(on)

, DRAIN–TO–SOURCE RESIST ANCE (NORMALIZED)

TJ, JUNCTION TEMPERATURE (°C)

–50 0 50 100 150

0

0.5

1.0

1.5

2.0
VGS = 10 V
ID = 2.5 A

1257525–25

VGS = 0 V

TJ = 125°C

100°C

1.2

10

3.5 V

2.7 V

3.1 V

4.5 V

VGS = 10 V

ID = 2.5 A
TJ = 25

°

C

3.3 V

2.21.8

0

0.01

0.03

0.05

1000

0.8