MOTOROLA MMSF7N03Z Technical data

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EZFETs are an advanced series of power MOSFET s which utilize
Motorola’s High Cell Density TMOS process and contain monolithic
back–to–back zener diodes. These zener diodes provide protection
against ESD and unexpected transients. These miniature surface
mount MOSFETs feature ultra low R

amd true logic level

DS(on)

performance. They are capable of withstanding high energy in the
avalanche and commutation modes and the drain–to–source diode
has a very low reverse recovery time. EZFET devices are designed
for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can als o be
used for low voltage motor controls in mass storage products such as

G

disk drives and tape drives.

• Zener Protected Gates Provide Electrostatic Discharge Protection

• Ultra Low R

Provides Higher Efficiency and Extends Battery Life

DS(on)

• Designed to withstand 200V Machine Model and 2000V Human Body Model

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Miniature SO–8 Surface Mount Package — Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• I

Specified at Elevated Temperature

DSS

• Mounting Information for SO–8 Package Provided

MAXIMUM RATINGS

Drain–to–Source Voltage V
Drain–to–Gate Voltage (RGS = 1.0 MΩ) V
Gate–to–Source Voltage — Continuous V
Drain Current — Continuous @ TA = 25°C (1)

Drain Current — Continuous @ TA = 70°C (1)
Drain Current — Pulsed Drain Current (3)

Total Power Dissipation @ TA = 25°C (1)

Linear Derating Factor (1)

Total Power Dissipation @ TA = 25°C (2)

Linear Derating Factor (2)
Operating and Storage Temperature Range TJ, T
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 15 Apk, L = 4.0 mH, RG = 25 Ω)
Thermal Resistance — Junction to Ambient (1)

(1) When mounted on 1 inch square FR–4 or G–10 board (VGS = 10 V, @ 10 Seconds)
(2) When mounted on 1 inch square FR–4 or G–10 board (VGS = 10 V, @ Steady State)
(3) Repetitive rating; pulse width limited by maximum junction temperature.

(TJ = 25°C unless otherwise noted)

Rating

— Junction to Ambient (2)

DEVICE MARKING ORDERING INFORMATION

Device Reel Size Tape Width Quantity

MMSF7N03ZR2 13″ 12 mm embossed tape 2500 units

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.

HDTMOS and EZFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the
Bergquist Company.



D

S

SINGLE TMOS

POWER MOSFET

7.5 AMPERES
30 VOLTS

R

CASE 751–05, Style 12

Source
Source
Source

Gate

Symbol Value Unit

DSS

DGR

GS

I

D

I

D

I

DM
P

D

P

D

stg

E

AS

R

θJA

= 0.030 OHM

DS(on)

SO–8

1
2
3
4

Top View

30 Vdc
30 Vdc

± 15 Vdc

7.5

5.6
60

2.5
20

1.6
12

– 55 to 150 °C

450

50
80

8
7
6
5

Watts

mW/°C

Watts

mW/°C

°C/W

Drain
Drain
Drain
Drain

Adc

Apk

mJ

Motorola TMOS Power MOSFET Transistor Device Data

 Motorola, Inc. 1996

1

MMSF7N03Z

)

f = 1.0 MHz)

(

DS

,

D

,

(

DD

,

D

,

(

DS

,

D

,

)

dIS/dt = 100 A/µs)

(1)

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage (Cpk ≥ 2.0) (1) (3)

(VGS = 0 Vdc, ID = 250 µAdc)
T emperature Coef ficient (Positive)

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0) I

ON CHARACTERISTICS

Gate Threshold Voltage (Cpk ≥ 2.0) (1) (3)

(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)

Static Drain–to–Source On–Resistance (Cpk ≥ 2.0) (1) (3)

(VGS = 10 Vdc, ID = 7.5 Adc)
(VGS = 4.5 Vdc, ID = 3.8 Adc)

Forward Transconductance (VDS = 3.0 Vdc, ID = 3.8 Adc) (1) g

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time t
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time t
Gate Charge

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

Reverse Recovery Time

Reverse Recovery Storage Charge Q

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.

(1)

(1)

Cpk =

(TC = 25°C unless otherwise noted)

(VDS = 24 Vdc, VGS = 0 Vdc,

(2)

(VDS = 15 Vdc, ID = 5.0 Adc,

VGS = 10 Vdc, RG = 6 Ω) (1)

(VDD = 15 Vdc, ID = 5.0 Adc,

VGS = 4.5 Vdc, RG = 6 Ω) (1)

(VDS = 24 Vdc, ID = 5.0 Adc,

(IS = 7.5 Adc, VGS = 0 Vdc) (1)

(IS = 7.5 Adc, VGS = 0 Vdc, TJ = 125°C)

Max limit – Typ

3 x SIGMA

f = 1.0 MHz

VGS = 10 Vdc) (1)

(IS = 7.5 Adc, VGS = 0 Vdc,

dI

/dt = 100 A/µs) (1

V

(BR)DSS

I

DSS

GSS

V

GS(th)

R

DS(on)

FS

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

f

t

d(on)

t

r

t

d(off)

f

Q
Q
Q
Q

V

SD

t

rr

t

a

t

b

RR

30
—

—
—

— 1.3 5.0 µAdc

1.0
—

—
—

4.0 9.5 — Mhos

— 750 1500 pF
— 340 680
— 45 90

— 40 80 ns
— 90 180
— 470 940
— 170 340
— 120 240 ns
— 350 700
— 430 860
— 140 280

T
1
2
3

— 34 48 nC
— 3.5 —
— 9.5 —
— 6.5 —

—
—

— 110 —
— 22 —
— 90 —
— 0.17 — µC

—
35

0.03

0.15

2.0

5.5

22
30

0.83

0.67

—
—

2.0
10

3.0
—

30
40

1.6
—

Vdc

mV/°C

µAdc

Vdc

mV/°C

mΩ

Vdc

ns

2

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

MMSF7N03Z

10

TJ = 25°C

8

6

4

, DRAIN CURRENT (AMPS)

D

I

2

0

0 0.4 1.6 2

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

VGS = 10 V

4.5 V

3.8 V

0.8

3.5 V

3.3 V

3.1 V

2.7 V

1.2

Figure 1. On–Region Characteristics

0.1
ID = 2.5 A

0.08

0.06

0.04

TJ = 25

10

VDS ≥ 10 V

8

6

4

, DRAIN CURRENT (AMPS)

D

I

2

0

2.21.8

VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)

100°C

25°C

TJ = –55°C

2.6 3 3.4 3.8

Figure 2. Transfer Characteristics

0.05
TJ = 25°C

°

C

0.04

0.03

0.02

VGS = 4.5

10 V

0.02

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

0

DS(on)

0

R

24 86

VGS, GATE–T O–SOURCE VOLT AGE (VOLTS)

Figure 3. On–Resistance versus

Gate–to–Source V oltage

2.0
VGS = 10 V
ID = 2.5 A

1.5

1.0

0.5

, DRAIN–TO–SOURCE RESIST ANCE (NORMALIZED)

0

–50 0 50 100 150

DS(on)

R

TJ, JUNCTION TEMPERATURE (°C)

0.01

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

0

10

DS(on)

024 810

R

ID, DRAIN CURRENT (AMPS)

6

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

1000

VGS = 0 V

100

, LEAKAGE (nA)

10

DSS

I

1

1257525–25

0 5 10 15 30

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

TJ = 125°C

100°C

20 25

Figure 5. On–Resistance Variation

with Temperature

Motorola TMOS Power MOSFET Transistor Device Data

Figure 6. Drain–to–Source Leakage Current

versus V oltage

3