Motorola MMSF5P02HDR2 Datasheet

1

Motorola TMOS Power MOSFET Transistor Device Data

  

Medium Power Surface Mount Products

  
   

MiniMOS devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process. These
miniature surface mount MOSFETs feature ultra low R

DS(on)

and true
logic level performance. They are capable of withstanding high energy in
the avalanche and commutation modes and the drain–to–s ource diode
has a very low reverse recovery time. MiniMOS devices are designed for
use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in des igns where induc tive loads are switched
and offer additional safety margin against unexpected voltage transients.

• Ultra Low R

DS(on)

Provides Higher Efficiency and Extends Battery Life

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Miniature SO–8 Surface Mount Package — Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• I

DSS

Specified at Elevated Temperature

• Avalanche Energy Specified

• Mounting Information for SO–8 Package Provided

DEVICE MARKING ORDERING INFORMATION

Device Reel Size Tape Width Quantity

S5P02H

MMSF5P02HDR2 13″ 12 mm embossed tape 4000 units

Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves —representing boundaries on device characteristics — are given to facilitate “worst case” design.

HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MMSF5P02HD/D



SEMICONDUCTOR TECHNICAL DATA

 Motorola, Inc. 1997

CASE 751–05, Style 13

SO–8



SINGLE TMOS

POWER MOSFET

8.7 AMPERES
20 VOLTS

R

DS(on)

= 0.03 OHM

Motorola Preferred Device



Source

1
2
3
4

8
7
6
5

Top View

Source
Source

Gate

Drain
Drain
Drain
Drain

D

S

G

REV 2

MMSF5P02HD

2

Motorola TMOS Power MOSFET Transistor Device Data

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted)

Negative sign for P–Channel devices omitted for clarity

Rating

Symbol Max Unit

Drain–to–Source Voltage V

DSS

20 V

Drain–to–Gate Voltage (RGS = 1.0 MΩ) V

DGR

20 V

Gate–to–Source Voltage — Continuous V

GS

± 8.0 V

1 inch SQ.
FR–4 or G–10 PCB

10 seconds

Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current

(1)

R

THJA

P

D

I

D

I

D

I

DM

50

2.5
20

8.7

7.0

43.5

°C/W

Watts

mW/°C

A
A
A

Minimum
FR–4 or G–10 PCB

10 seconds

Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current

(1)

R

THJA

P

D

I

D

I

D

I

DM

80

1.56

12.5

6.9

5.5
35

°C/W

Watts

mW/°C

A
A
A

Operating and Storage Temperature Range TJ, T

stg

– 55 to 150 °C

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 20 Vdc, VGS = 4.5 Vdc, Peak IL = 19 Apk, L = 5.5 mH, RG = 25 W)

E

AS

1000

mJ

(1) Repetitive rating; pulse width limited by maximum junction temperature.

MMSF5P02HD

3

Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage (Cpk ≥ 2.0) (1) (3)

(VGS = 0 Vdc, ID = 0.25 mAdc)
T emperature Coef ficient (Positive)

V

(BR)DSS

20
—

—

10

—
—

Vdc

mV/°C

Zero Gate Voltage Drain Current

(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)

I

DSS

—
—

—
—

1.0
25

µAdc

Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0) I

GSS

— — 100 nAdc

ON CHARACTERISTICS

(1)

Gate Threshold Voltage (Cpk ≥ 2.0) (1) (3)

(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)

V

GS(th)

0.7
—

0.9

2.6

1.4
—

Vdc

mV/°C

Static Drain–to–Source On–Resistance (Cpk ≥ 2.0) (1) (3)

(VGS = 4.5 Vdc, ID = 6.4 Adc)
(VGS = 2.5 Vdc, ID = 5.1 Adc)

R

DS(on)

—
—

22
35

30
45

mΩ

On–State Drain Current

(VDS ≤ 5.0 V, VGS = 4.5 V)
(VDS ≤ 5.0 V, VGS = 2.5 V)

I

D(on)

10

5.0

—
—

—
—

A

Forward Transconductance (VDS = 9.0 Vdc, ID = 6.4 Adc) (1) g

FS

14 18 — Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

C

iss

— 1400 1960 pF

Output Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz

)

C

oss

— 925 1300

Transfer Capacitance

f = 1.0 MHz)

C

rss

— 370 520

SWITCHING CHARACTERISTICS

(2)

Turn–On Delay Time

t

d(on)

— 19 40

ns

Rise Time

(VDD = 6.0 Vdc, ID = 1.0 Adc,

t

r

— 28 55

Turn–Off Delay Time

V

GS

= 4.5 Vdc,

RG = 6.0 Ω) (1)

t

d(off)

— 130 200

Fall Time

G

)( )

t

f

— 90 150

Gate Charge

Q

T

— 27.3 38

nC

See Figure 8

(VDS = 6.0 Vdc, ID = 6.4 Adc,

Q

1

— 3.4 —

(

DS

,

D

,

VGS = 4.5 Vdc) (1)

Q

2

— 12 —

Q

3

— 8.0 —

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(1)

(IS = 2.5 Adc, VGS = 0 Vdc) (1)

(IS = 2.5 Adc, VGS = 0 Vdc, TJ = 125°C)

V

SD

—
—

0.77

0.6

1.2
—

Vdc

Reverse Recovery Time

t

rr

— 95 180

ns

See Figure 15

(IS = 2.5 Adc, VGS = 0 Vdc,

t

a

— 35 —

(

S

,

GS

,

dIS/dt = 100 A/µs) (1)

t

b

— 60 —

Reverse Recovery Stored Charge Q

RR

— 0.151 — µC

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.

Cpk =

Max limit – Typ

3 x SIGMA

(4) Repetitive rating; pulse width limited by maximum junction temperature.

MMSF5P02HD

4

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

VGS =

8

Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On–Resistance versus Drain Current Figure 4. On–Resistance versus Drain Current

and Gate Voltage

Figure 5. On–Resistance Variation with

Temperature

Figure 6. Drain–to–Source Leakage Current

versus Voltage

2.00

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

12

8.0

10

6.0

VGS, GATE–T O–SOURCE VOLT AGE (VOLTS)

3.01.0

4.0

2.0

0

0

VGS, GATE–T O–SOURCE (VOLTS)

0.06

0.04

0.02

0

ID, DRAIN CURRENT (AMPS)

2.00

0.04

0.02

0

4.0

–25 25–50

TJ, JUNCTION TEMPERATURE (

°

C)

2.0

1.5

1.0

0.5

0

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

4.00

1000

100

10

1.0
160

I

D

, DRAIN CURRENT (AMPS)

I

(W)

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

R

DS(on)

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

0

0.5 1.0 1.5 2.51.5 2.0

6.0

12

2.0 4.0 6.0 8.0 10 6.0 8.0

, DRAIN–TO–SOURCE RESIST ANCER

DS(on)

50 10075 8.0 12 20

I

DSS

, LEAKAGE (nA) , DRAIN CURRENT (AMPS)

D

R

DS(on)

125 150

(NORMALIZED)

TJ = 25°C

VGS = 4.5 V

2.5 V

VGS = 4.5 V
ID = 5.1 A

25°C

100°C

TJ = 125°C

VGS = 0 V

ID = 6.4 A
TJ = 25

°

C

TJ = –55°C

100°C

25°C

VDS ≥ 10 V

1.7 V

1.9 V

2.1 V

2.3 V
TJ = 25°C

2.5 V

2.7 V

3.1 V

4.5 V

3.7 V

0.06

10 12

8.0

10

4.0

2.0