MOTOROLA MMSF5P02HD Technical data

S5P02H

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SEMICONDUCTOR TECHNICAL DATA

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Medium Power Surface Mount Products

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MiniMOS devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process. These
miniature surface mount MOSFETs feature ultra low R
logic level performance. They are capable of withstanding high energy in
the avalanche and commutation modes and the drain–to–s ource diode
has a very low reverse recovery time. MiniMOS devices are designed for
use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where induc tive loads are switched
and offer additional safety margin against unexpected voltage transients.

• Ultra Low R

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Miniature SO–8 Surface Mount Package — Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• I

• Avalanche Energy Specified

• Mounting Information for SO–8 Package Provided

Specified at Elevated Temperature

DSS

Provides Higher Efficiency and Extends Battery Life

DS(on)

DS(on)

and true



Motorola Preferred Device

SINGLE TMOS

POWER MOSFET

8.7 AMPERES
20 VOLTS

R



D

CASE 751–05, Style 13

G

S

Source
Source
Source

Gate

DS(on)

= 0.03 OHM

SO–8

1

8

2

7

3

6

4

5

Top View

Drain
Drain
Drain
Drain

DEVICE MARKING ORDERING INFORMATION

Device Reel Size Tape Width Quantity

MMSF5P02HDR2 13″ 12 mm embossed tape 4000 units

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola TMOS Power MOSFET Transistor Device Data

 Motorola, Inc. 1997

1

MMSF5P02HD

MAXIMUM RATINGS

Negative sign for P–Channel devices omitted for clarity

Drain–to–Source Voltage V
Drain–to–Gate Voltage (RGS = 1.0 MΩ) V
Gate–to–Source Voltage — Continuous V
1 inch SQ.

FR–4 or G–10 PCB

10 seconds

Minimum
FR–4 or G–10 PCB

10 seconds

Operating and Storage Temperature Range TJ, T
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 20 Vdc, VGS = 4.5 Vdc, Peak IL = 19 Apk, L = 5.5 mH, RG = 25 W)

(1) Repetitive rating; pulse width limited by maximum junction temperature.

(TJ = 25°C unless otherwise noted)

Rating

Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current

Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current

(1)

(1)

Symbol Max Unit

20 V
20 V

± 8.0 V

50

2.5
20

8.7

7.0

43.5
80

1.56

12.5

6.9

5.5
35

– 55 to 150 °C

1000

°C/W

Watts

mW/°C

°C/W

Watts

mW/°C

mJ

A
A
A

A
A
A

R

THJA

I

R

THJA

I

E

DSS

DGR

GS

P

D

I

D

I

D

DM

P

D

I

D

I

D

DM

stg

AS

2

Motorola TMOS Power MOSFET Transistor Device Data

MMSF5P02HD

)

f = 1.0 MHz)

V

G

)( )

(

DS

,

D

,

(

S

,

GS

,

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage (Cpk ≥ 2.0) (1) (3)

(VGS = 0 Vdc, ID = 0.25 mAdc)
T emperature Coef ficient (Positive)

Zero Gate Voltage Drain Current

(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0) I

(1)

(1)

Cpk =

(2)

Max limit – Typ

ON CHARACTERISTICS

Gate Threshold Voltage (Cpk ≥ 2.0) (1) (3)

(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)

Static Drain–to–Source On–Resistance (Cpk ≥ 2.0) (1) (3)

(VGS = 4.5 Vdc, ID = 6.4 Adc)
(VGS = 2.5 Vdc, ID = 5.1 Adc)

On–State Drain Current

(VDS ≤ 5.0 V, VGS = 4.5 V)
(VDS ≤ 5.0 V, VGS = 2.5 V)

Forward Transconductance (VDS = 9.0 Vdc, ID = 6.4 Adc) (1) g

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge

See Figure 8

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

Reverse Recovery Time

See Figure 15

Reverse Recovery Stored Charge Q

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.

(4) Repetitive rating; pulse width limited by maximum junction temperature.

= 25°C unless otherwise noted)

C

(VDS = 16 Vdc, VGS = 0 Vdc,

(VDD = 6.0 Vdc, ID = 1.0 Adc,

(VDS = 6.0 Vdc, ID = 6.4 Adc,

(IS = 2.5 Adc, VGS = 0 Vdc) (1)

(IS = 2.5 Adc, VGS = 0 Vdc, TJ = 125°C)

3 x SIGMA

f = 1.0 MHz

= 4.5 Vdc,

GS

RG = 6.0 Ω) (1)

VGS = 4.5 Vdc) (1)

(IS = 2.5 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs) (1)

V

(BR)DSS

I

DSS

GSS

V

GS(th)

R

DS(on)

I

D(on)

FS

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

V

SD

t

rr

t

a

t

b

RR

20
—

—
—

— — 100 nAdc

0.7
—

—
—

10

5.0
14 18 — Mhos

— 1400 1960 pF
— 925 1300
— 370 520

— 19 40
— 28 55
— 130 200
— 90 150

T
1
2
3

— 27.3 38
— 3.4 —
— 12 —
— 8.0 —

—
—

— 95 180
— 35 —
— 60 —
— 0.151 — µC

—
10

—
—

0.9

2.6

22
35

—
—

0.77

0.6

—
—

1.0
25

1.4

—

30
45

—
—

1.2

—

Vdc

mV/°C

µAdc

Vdc

mV/°C

mΩ

A

ns

nC

Vdc

ns

Motorola TMOS Power MOSFET Transistor Device Data

3

MMSF5P02HD

TYPICAL ELECTRICAL CHARACTERISTICS

12

10

8.0

6.0

4.0

, DRAIN CURRENT (AMPS)

D

I

2.0

0

0.06

0.04

VGS =

8

2.5 V

2.7 V

3.1 V

3.7 V

4.5 V

0.5 1.0 1.5 2.51.5 2.0

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

2.3 V
TJ = 25°C

2.1 V

1.9 V

1.7 V

2.00

12

VDS ≥ 10 V

10

8.0

6.0

4.0

D

I

2.0

0

VGS, GATE–T O–SOURCE VOLT AGE (VOLTS)

100°C

25°C

TJ = –55°C

Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics

0.06

ID = 6.4 A
TJ = 25

°

C

0.04

TJ = 25°C

2.5 V

3.01.0

VGS = 4.5 V

0.02

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

(W)

0

DS(on)

R

0

2.0 4.0 6.0 8.0 10 6.0 8.0
VGS, GATE–T O–SOURCE (VOLTS)

0.02

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

0

DS(on)

R

2.00

4.0

ID, DRAIN CURRENT (AMPS)

Figure 3. On–Resistance versus Drain Current Figure 4. On–Resistance versus Drain Current

and Gate Voltage

2.0
VGS = 4.5 V

ID = 5.1 A

1.5

1.0

(NORMALIZED)

0.5

, DRAIN–TO–SOURCE RESIST ANCER

DS(on)

0

–25 25–50

TJ, JUNCTION TEMPERATURE (

50 10075 8.0 12 20

°

C)

125 150

1000

100

, LEAKAGE (nA) , DRAIN CURRENT (AMPS)

10

DSS

I

1.0

VGS = 0 V

4.00

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

TJ = 125°C

100°C

25°C

10 12

160

Figure 5. On–Resistance Variation with

T emperature

4

Figure 6. Drain–to–Source Leakage Current

versus V oltage

Motorola TMOS Power MOSFET Transistor Device Data