MOTOROLA MMSF4P01HD Technical data
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
MiniMOS devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFET s feature ultra low R
DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable a nd battery p owered p roducts such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives.
• Ultra Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I
DSS
Specified at Elevated Temperature
• Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
(1)
Rating
Symbol Value Unit
Drain–to–Source Voltage V
DSS
12 Vdc
Drain–to–Gate Voltage (RGS = 1.0 MΩ) V
DGR
12 Vdc
Gate–to–Source Voltage — Continuous V
GS
± 8.0 Vdc
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
I
D
I
D
I
DM
5.1
3.3
26
Adc
Apk
Total Power Dissipation @ TA = 25°C
(2)
P
D
2.5 Watts
Operating and Storage Temperature Range – 55 to 150 °C
Thermal Resistance — Junction to Ambient
(2)
R
θJA
50 °C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T
L
260 °C
DEVICE MARKING
S4P01
(1) Negative sign for P–Channel device omitted for clarity .
(2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided), 10 sec. max.
ORDERING INFORMATION
Device Reel Size Tape Width Quantity
MMSF4P01HDR2 13″ 12 mm embossed tape 2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Order this document
by MMSF4P01HD/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1996
D
S
G
CASE 751–05, Style 13
SO–8
SINGLE TMOS POWER FET
4.0 AMPERES
12 VOLTS
R
DS(on)
= 0.08 OHM
Motorola Preferred Device
N–C
1
2
3
4
8
7
6
5
Top View
Source
Source
Gate
Drain
Drain
Drain
Drain
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 5
查询MMSF4P01HD/D供应商
MMSF4P01HD
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
(1)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
12
—
—
22
—
—
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 12 Vdc, VGS = 0 Vdc)
(VDS = 12 Vdc, VGS = 0 Vdc, TJ = 125°C)
I
DSS
—
—
—
—
1.0
10
µAdc
Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0) I
GSS
— — 100 nAdc
ON CHARACTERISTICS
(2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
V
GS(th)
0.7
—
0.95
2.7
1.1
—
Vdc
mV/°C
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 4.0 Adc)
(VGS = 2.7 Vdc, ID = 2.0 Adc)
R
DS(on)
—
—
0.073
0.08
0.08
0.09
Ohm
Forward Transconductance (VDS = 2.5 Vdc, ID = 2.0 Adc) g
FS
3.0 7.0 — mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
— 1270 1700 pF
Output Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
C
oss
— 935 1300
Reverse Transfer Capacitance
f = 1.0 MHz)
C
rss
— 420 600
SWITCHING CHARACTERISTICS
(3)
Turn–On Delay Time
t
d(on)
— 25 35
Rise Time
t
r
— 250 350
Turn–Off Delay Time
VGS = 2.7 Vdc,
RG = 6.0 Ω)
t
d(off)
— 58 80
Fall Time
G
= 6.0 Ω)
t
f
— 106 150
Turn–On Delay Time
t
d(on)
— 17 25
Rise Time
t
r
— 71 100
Turn–Off Delay Time
VGS = 4.5 Vdc,
RG = 6.0 Ω)
t
d(off)
— 95 140
Fall Time
G
= 6.0 Ω)
t
f
— 106 150
Q
T
— 24 34
DS
= 10 Vdc, ID = 4.0 Adc,
Q
1
— 2.4 —
(VDS = 10 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc)
Q
2
— 11.4 —
Q
3
— 8.4 —
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(2)
(IS = 4.0 Adc, VGS = 0 Vdc)
(IS = 4.0 Adc, VGS = 0 Vdc, TJ = 125°C)
V
SD
—
—
1.3
1.1
1.8
—
Vdc
t
rr
— 134 —
S
= 4.0 Adc, VGS = 0 Vdc,
t
a
— 66 —
(IS = 4.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
t
b
— 68 —
Reverse Recovery Stored Charge Q
RR
— 0.33 — µC
(1) Negative sign for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(3) Switching characteristics are independent of operating junction temperature.
Gate Charge
Reverse Recovery Time
(VDS = 6.0 Vdc, ID = 4.0 Adc,
(VDD = 6.0 Vdc, ID = 4.0 Adc,
(V
(I
ns
nC
ns
MMSF4P01HD
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE
(NORMALIZED)
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
I
DSS
, LEAKAGE (nA)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)TJ, JUNCTION TEMPERATURE (°C)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
I
D
, DRAIN CURRENT (AMPS)
Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics
0 4 8
Figure 3. On–Resistance versus
Gate–To–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
10
1000
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
VDS ≥ 10 V
–55°C
25°C
ID = 2 A
0 4 8
– 50 – 25 0 25 50 75 100 125 150 0 3 6 12
VGS = 0 V
TJ = 125°C
TJ = 25°C
VGS = 2.7 V
100
9
100°C
2 6 62
4.5 V
8
6
4
2
0
TJ = 100°C
0.16
0.12
0.08
0.04
0
0.1
0.09
0.08
0.06
8
6
4
2
0
1 1.61.4 21.2 1.8 2.42.2
0.07
0
0.5
1
2
1.5
VGS = 4.5 V
ID = 4 A
TJ = 25°C
4.5 V
0 0.60.4 10.2 0.8 1.4 1.61.2 1.8 2
TJ = 25°C
3.1 V
VGS = 8 V
1.5 V
2.5 V
1.7 V
1.9 V
2.1 V
2.3 V
2.7 V
Loading...