MOTOROLA MMSF1308 Technical data
S1308
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SEMICONDUCTOR TECHNICAL DATA
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Low Power Surface Mount Products
MiniMOS devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process. These
miniature surface mount MOSFETs feature ultra low R
logic level performance. They are capable of withstanding high energy in
the avalanche and commutation modes and the drain–to–s ource diode
has a very low reverse recovery time. MiniMOS devices are designed for
use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where induc tive loads are switched
and offer additional safety margin against unexpected voltage transients.
• Low R
Provides Higher Efficiency and Extends Battery Life
DS(on)
• High Speed Switching Provides High Efficiency for DC/DC
Converter
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Exhibits High Speed, With Soft Recovery
DS(on)
and true
Motorola Preferred Device
SINGLE TMOS
POWER MOSFET
7 AMPERES
30 VOLTS
R
CASE 751–06, Style 12
D
Source
Source
G
Source
Gate
DS(on)
SO–8
= 30 m
1
2
3
4
W
8
Drain
7
Drain
6
Drain
5
Drain
S
MAXIMUM RATINGS
Drain–to–Source Voltage V
Drain–to–Gate Voltage (RGS = 1.0 MΩ) V
Gate–to–Source Voltage — Continuous V
Continuous Drain Current @ TA = 25°C
Pulsed Drain Current
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range TJ, T
(TJ = 25°C unless otherwise noted)
Parameter
(1)
(2)
(1)
Symbol Max Unit
DSS
DGR
GS
I
D
I
DM
P
D
stg
Top View
30 Vdc
30 Vdc
± 20 Vdc
7.0
50
2.5 W
– 55 to 150 °C
Adc
THERMAL RESISTANCE
Junction–to–Ambient
(1) When mounted on 1 inch square FR–4 or G–10 board (VGS = 10 V, @ 10 Seconds)
(2) Repetitive rating; pulse width limited by maximum junction temperature.
(1)
R
θJA
50 °C/W
DEVICE MARKING ORDERING INFORMATION
Device Reel Size Tape Width Quantity
MMSF1308R2 13″ 12 mm embossed tape 2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1998
1
MMSF1308
)
f = 1.0 MHz)
V
10 Vd
G
)
(
DS
,
D
,
(
S
,
GS
,
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
T emperature Coef ficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) I
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 7.0 Adc)
(VGS = 4.5 Vdc, ID = 3.5 Adc)
Forward Transconductance (VDS = 5.0 Vdc, ID = 1.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge Q
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperatures.
(3) Reflects typical values.
(4) Repetitive rating; pulse width limited by maximum junction temperature.
(1)
Cpk =
(TC = 25°C unless otherwise noted)
(1)
(VDS = 24 Vdc, VGS = 0 V,
f = 1.0 MHz
(2)
(VDD = 21 Vdc, ID = 7.0 Adc,
GS
RG = 6.0 Ω)
(VDS = 15 Vdc, ID = 7.0 Adc,
VGS = 10 Vdc)
(IS = 7.0 Adc, VGS = 0 Vdc)
(IS = 7.0 Adc, VGS = 0 Vdc, TJ = 125°C)
(IS = 7.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Max limit – Typ
3 x SIGMA
=
(1)
c,
(1)
(1)
(1)
V
(BR)DSS
I
DSS
GSS
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
V
SD
t
rr
t
a
t
b
RR
30
—
—
—
— — 100 nAdc
1.0
—
—
—
— 4.5 — Mhos
— 690 970 pF
— 290 410
— 90 130
— 7.5 15
— 24 48
— 30 60
— 46 92
T
1
2
3
— 20 30
— 2.5 —
— 6.0 —
— 8.0 —
—
—
— 35 —
— 20 —
— 15 —
— 0.03 — µC
—
30
—
—
1.6
4.3
22
30
0.85
0.71
—
—
1.0
10
2.5
—
30
39
1.0
—
Vdc
mV/°C
µAdc
Vdc
mV/°C
mΩ
ns
nC
Vdc
ns
2
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
MMSF1308
10
8
6
4
, DRAIN CURRENT (AMPS)
D
I
2
0
0 0.2 0.4 1.20.6 1.0
3.5 V10 V
4.5 V
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
Figure 1. On–Region Characteristics
0.5
0.4
0.3
0.8
3.1 V
2.9 V
2.7 V
VGS = 2.3 V
TJ = 25°C
1.4 1.6 2.0
1.8
ID = 7.0 A
TJ = 25
°
C
15
VDS ≥ 10 V
12
9
6
, DRAIN CURRENT (AMPS)
D
I
3
0
02
1
VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)
TJ = 125°C
25°C
–55°C
34
Figure 2. Transfer Characteristics
0.05
TJ = 25°C
0.04
VGS = 4.5 V
0.03
10 V
5
0.2
0.1
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
W
0
DSon( )
R
204 10
VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)
68
Figure 3. On–Resistance versus
Drain Current
2.0
VGS = 10 V
ID = 7.0 A
1.5
1.0
(NORMALIZED)
0.5
, DRAIN–TO–SOURCE RESIST ANCE
DS(on)
R
0
–50 –25 0 25 50 75 100 125 150
°
TJ, JUNCTION TEMPERATURE (
C)
0.02
0.01
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
0
DS(on)
012 4
R
ID, DRAIN CURRENT (AMPS)
3
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1E–07
1E–08
1E–09
, LEAKAGE (A)
DSS
I
1E–10
1E–11
0
515
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
TJ = 125°C
100°C
25°C
10 20 25
5
VGS = 0 V
30
Figure 5. On–Resistance Variation with
T emperature
Motorola TMOS Power MOSFET Transistor Device Data
Figure 6. Drain–T o–Source Leakage
Current versus Voltage
3
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