Motorola MMSF10N03ZR2 Datasheet

1

Motorola TMOS Power MOSFET Transistor Device Data

 

Medium Power Surface Mount Products

   ! 
        

EZFETs are an advanced series of power MOSFETs which utilize
Motorola’s High Cell Density TMOS process and contain monolithic
back–to–back zener diodes. These zener diodes provide protection
against ESD and unexpected transients. These miniature surface mount
MOSFET s feature ultra low R

DS(on)

and true logic level performance. They
are capable of withstanding high energy in the avalanche and commuta­tion modes and the drain–to–source diode has a very low reverse recovery
time. EZFET devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls in
mass storage products such as disk drives and tape drives.

• Zener Protected Gates Provide Electrostatic Discharge Protection

• Designed to Withstand 200 V Machine Model and 2000 V Human Body Model

• Ultra Low R

DS(on)

Provides Higher Efficiency and Extends Battery Life

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Miniature SO–8 Surface Mount Package — Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• I

DSS

Specified at Elevated Temperature

• Mounting Information for SO–8 Package Provided

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted)

Parameter

Symbol Max Unit

Drain–to–Source Voltage V

DSS

30 Vdc

Drain–to–Gate Voltage (RGS = 1.0 MΩ) V

DGR

30 Vdc

Gate–to–Source Voltage — Continuous V

GS

± 20 Vdc

Drain Current — Continuous @ TA = 25°C

(1)

Drain Current — Continuous @ TA = 70°C

(1)

Drain Current — Pulsed Drain Current

(3)

I

D

I

D

I

DM

10

7.7
50

Adc

Total Power Dissipation @ TA = 25°C

(1)

Linear Derating Factor @ TA = 25°C

(1)

P

D

2.5
20

Watts

mW/°C

Total Power Dissipation @ TA = 25°C

(2)

Linear Derating Factor @ TA = 25°C

(2)

P

D

1.6
12

Watts

mW/°C

Operating and Storage Temperature Range TJ, T

stg

– 55 to 150 °C

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 30 Vdc, VGS = 10 Vdc, IL = 10 Apk, L = 20 mH, RG = 25 W)

E

AS

1000

mJ

THERMAL RESISTANCE

Parameter Symbol Typ Max Unit

Junction–to–Ambient

(1)

Junction–to–Ambient

(2)

R

q

JA

—
—

50
80

°C/W

(1) When mounted on 1” square FR4 or G–10 board (VGS = 10 V, @ 10 seconds).
(2) When mounted on minimum recommended FR4 or G–10 board (VGS = 10 V , @ Steady State).
(3) Repetitive rating; pulse width limited by maximum junction temperature.

DEVICE MARKING ORDERING INFORMATION

Device Reel Size Tape Width Quantity

S10N3Z

MMSF10N03ZR2 13″ 12 mm embossed tape 2500 units

This document contains information on a new product. Specifications and information herein are subject to change without notice.

HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MMSF10N03Z/D



SEMICONDUCTOR TECHNICAL DATA

 Motorola, Inc. 1997

Source

1
2
3
4

8
7
6
5

Top View

Source
Source

Gate

Drain
Drain
Drain
Drain

D

S

G

CASE 751–05, Style 12

SO–8



SINGLE TMOS

POWER MOSFET

10 AMPERES

30 VOLTS

R

DS(on)

= 13 m

W

Motorola Preferred Device



MMSF10N03Z

2

Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS

(TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage (Cpk ≥ 2.0)

(1) (3)

(VGS = 0 Vdc, ID = 0.25 mAdc)
T emperature Coef ficient (Positive)

V

(BR)DSS

30
—

—
65

—
—

Vdc

mV/°C

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)

I

DSS

—
—

—
—

1.0
10

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) I

GSS

— — 3.0 µAdc

ON CHARACTERISTICS

(1)

Gate Threshold Voltage (Cpk ≥ 2.0)

(1) (3)

(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)

V

GS(th)

1.0
—

1.2

3.5

1.7
—

Vdc

mV/°C

Static Drain–to–Source On–Resistance (Cpk ≥ 2.0)

(1) (3)

(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)

R

DS(on)

—
—

10
13

13
18

mΩ

Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc)

(1)

g

FS

7.0 13 — Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

C

iss

— 720 1010 pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz

)

C

oss

— 570 800

Transfer Capacitance

f = 1.0 MHz)

C

rss

— 78 110

SWITCHING CHARACTERISTICS

(2)

Turn–On Delay Time

t

d(on)

— 35 70

ns

Rise Time

(VDD = 25 Vdc, ID = 1.0 Adc,

t

r

— 105 210

Turn–Off Delay Time

V

GS

=

10 Vd

c,

RG = 6.0 Ω)

(1)

t

d(off)

— 970 1940

Fall Time

G

)

t

f

— 550 1100

Gate Charge

Q

T

— 46 64

nC

See Figure 8

(VDS = 15 Vdc, ID = 2.0 Adc,

Q

1

— 3.8 —

(

DS

,

D

,

VGS = 10 Vdc)

(1)

Q

2

— 11 —

Q

3

— 8.1 —

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (IS = 10 Adc, VGS = 0 Vdc)

(1)

(IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C)

V

SD

—
—

0.80

0.70

1.1
—

Vdc

Reverse Recovery Time

t

rr

— 460 —

ns

(IS = 2.3 Adc, VGS = 0 Vdc,

t

a

— 180 —

(

S

,

GS

,

dIS/dt = 100 A/µs)

(1)

t

b

— 280 —

Reverse Recovery Stored Charge Q

RR

— 4.2 — µC

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperatures.
(3) Reflects typical values.

Cpk =

Max limit – Typ

3 x SIGMA

MMSF10N03Z

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

R

DS(on)

, DRAIN–TO–SOURCE RESIST ANCE

(NORMALIZED)

R

DS(on)

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

0

8.0

16

20

VDS, DRAIN–TO–SOURCE VOL TAGE (VOL TS)

Figure 1. On–Region Characteristics

I

D

, DRAIN CURRENT (AMPS)

0 0.5 1.0

0

10

15

20

I

D

, DRAIN CURRENT (AMPS)

VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0 2.0 4.0 10

0

0.04

0.06

0 5.0 10 15 20

0.020

VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)

Figure 3. On–Resistance versus

Drain Current

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

1.5

2.0

0 4.0 20

1.0

100

10,000

TJ, JUNCTION TEMPERATURE (

°

C)

Figure 5. On–Resistance Variation with

Temperature

VDS, DRAIN–TO–SOURCE VOL TAGE (VOL TS)

Figure 6. Drain–To–Source Leakage

Current versus Voltage

I

DSS

, LEAKAGE (nA)

VDS ≥ 10 V

TJ = 100°C

25°C

–55°C

TJ = 25°C

VGS = 0 V

VGS = 10 V

1.5 2.0 2.5

6.0 8.0

4.5 V

–50 –25 0 25 50 75 100 125 150

TJ = 125°C

1.0

10

8.0

25°C

100°C

R

DS(on)

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

0 0.5 1.0

1.5 2.0

4.0

10 V

VGS = 2.7 V

3.1 V

4.5 V

TJ = 25°C

12

5.0

0.03

0.01

0.05

0.005

0.010

0.015

0

0.5

0

0.01
12

1000

16

VGS = 10 V
ID = 5.0 A

ID = 10 A
TJ = 25

°

C

0.02

1.9 V

2.5 V

2.3 V

2.1 V

3.0

0.1