MOTOROLA MMSF10N03Z Technical data

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SEMICONDUCTOR TECHNICAL DATA

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EZFETs are an advanced series of power MOSFETs which utilize
Motorola’s High Cell Density TMOS process and contain monolithic
back–to–back zener diodes. These zener diodes provide protection
against ESD and unexpected transients. These miniature surface mount
MOSFET s feature ultra low R
are capable of withstanding high energy in the avalanche and commuta­tion modes and the drain–to–source diode has a very low reverse recovery
time. EZFET devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls in
mass storage products such as disk drives and tape drives.

• Zener Protected Gates Provide Electrostatic Discharge Protection

• Designed to Withstand 200 V Machine Model and 2000 V Human Body Model

• Ultra Low R

Provides Higher Efficiency and Extends Battery Life

DS(on)

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Miniature SO–8 Surface Mount Package — Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• I

Specified at Elevated Temperature

DSS

• Mounting Information for SO–8 Package Provided

MAXIMUM RATINGS

Drain–to–Source Voltage V
Drain–to–Gate Voltage (RGS = 1.0 MΩ) V
Gate–to–Source Voltage — Continuous V
Drain Current — Continuous @ TA = 25°C

Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current

Total Power Dissipation @ TA = 25°C
Linear Derating Factor @ TA = 25°C

Total Power Dissipation @ TA = 25°C
Linear Derating Factor @ TA = 25°C

Operating and Storage Temperature Range TJ, T
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 30 Vdc, VGS = 10 Vdc, IL = 10 Apk, L = 20 mH, RG = 25 W)

(TJ = 25°C unless otherwise noted)

THERMAL RESISTANCE

Junction–to–Ambient
Junction–to–Ambient

(1) When mounted on 1” square FR4 or G–10 board (VGS = 10 V, @ 10 seconds).
(2) When mounted on minimum recommended FR4 or G–10 board (VGS = 10 V, @ Steady State).
(3) Repetitive rating; pulse width limited by maximum junction temperature.

(1)
(2)

DEVICE MARKING ORDERING INFORMATION

This document contains information on a new product. Specifications and information herein are subject to change without notice.

HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

and true logic level performance. They

DS(on)

G

Parameter

(1)
(1)

(3)

(1)

(1)

(2)

(2)

Parameter Symbol Typ Max Unit

Device Reel Size Tape Width Quantity

MMSF10N03ZR2 13″ 12 mm embossed tape 2500 units



D

Source
Source
Source

S

Symbol Max Unit

DSS

DGR

I
I

I

DM
P

P

E

R

q

JA

—
—

Motorola Preferred Device

SINGLE TMOS

POWER MOSFET

10 AMPERES

30 VOLTS

R

CASE 751–05, Style 12

Gate

GS

D
D

D

D

stg

AS

= 13 m

DS(on)

SO–8

1

8

2

7

3

6

4

5

Top View

30 Vdc
30 Vdc

± 20 Vdc

10

7.7
50

2.5
20

1.6
12

– 55 to 150 °C

1000

50
80

W

Drain
Drain
Drain
Drain

Adc

Watts

mW/°C

Watts

mW/°C

mJ

°C/W

Motorola TMOS Power MOSFET Transistor Device Data

 Motorola, Inc. 1997

1

MMSF10N03Z

)

f = 1.0 MHz)

V

10 Vd

G

)

(

DS

,

D

,

(

S

,

GS

,

ELECTRICAL CHARACTERISTICS

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage (Cpk ≥ 2.0)

(VGS = 0 Vdc, ID = 0.25 mAdc)
T emperature Coef ficient (Positive)

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) I

ON CHARACTERISTICS

Gate Threshold Voltage (Cpk ≥ 2.0)

(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)

Static Drain–to–Source On–Resistance (Cpk ≥ 2.0)

(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)

Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge

See Figure 8

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (IS = 10 Adc, VGS = 0 Vdc)

Reverse Recovery Time

Reverse Recovery Stored Charge Q

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperatures.
(3) Reflects typical values.

(1)

Cpk =

(TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

(1) (3)

(1) (3)

(1) (3)

(1)

(VDS = 25 Vdc, VGS = 0 Vdc,

(2)

(VDD = 25 Vdc, ID = 1.0 Adc,

(VDS = 15 Vdc, ID = 2.0 Adc,

(IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C)

Max limit – Typ

3 x SIGMA

f = 1.0 MHz

c,

=

GS

RG = 6.0 Ω)

VGS = 10 Vdc)

(IS = 2.3 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

(1)

(1)

(1)

(1)

V

(BR)DSS

I

DSS

GSS

V

GS(th)

R

DS(on)

g

FS

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

V

SD

t

rr

t

a

t

b

RR

30
—

—
—

— — 3.0 µAdc

1.0
—

—
—

7.0 13 — Mhos

— 720 1010 pF
— 570 800
— 78 110

— 35 70
— 105 210
— 970 1940
— 550 1100

T
1
2
3

— 46 64
— 3.8 —
— 11 —
— 8.1 —

—
—

— 460 —
— 180 —
— 280 —
— 4.2 — µC

—
65

—
—

1.2

3.5

10
13

0.80

0.70

—
—

1.0
10

1.7

—

13
18

1.1

—

Vdc

mV/°C

µAdc

Vdc

mV/°C

mΩ

ns

nC

Vdc

ns

2

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

MMSF10N03Z

20

10 V

4.5 V

16

12

8.0

, DRAIN CURRENT (AMPS)

D

I

4.0

0

0 0.5 1.0

3.1 V

VDS, DRAIN–TO–SOURCE VOL TAGE (VOL TS)

Figure 1. On–Region Characteristics

0.06

0.05

0.04

0.03

VGS = 2.7 V

2.5 V

2.3 V

2.1 V

1.9 V

TJ = 25°C

1.5 2.0

ID = 10 A
TJ = 25

°

C

20

VDS ≥ 10 V

15

10

, DRAIN CURRENT (AMPS)

5.0

D

I

0

0 0.5 1.0

0.020
TJ = 25°C

0.015

0.010

25°C

TJ = 100°C

–55°C

1.5 2.0 2.5

VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

4.5 V

VGS = 10 V

3.0

0.02

0.01

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

0

DS(on)

0 2.0 4.0 10

R

VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)

6.0 8.0

Figure 3. On–Resistance versus

Drain Current

2.0

VGS = 10 V
ID = 5.0 A

1.5

1.0

(NORMALIZED)

0.5

, DRAIN–TO–SOURCE RESIST ANCE

DS(on)

R

0

–50 –25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (

°

C)

0.005

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

0

DS(on)

0 5.0 10 15 20

R

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

10,000

, LEAKAGE (nA)

DSS

I

VGS = 0 V

1000

100

10

1.0

0.1

0.01
0 4.0 20

VDS, DRAIN–TO–SOURCE VOL TAGE (VOL TS)

TJ = 125°C

100°C

25°C

8.0

12

16

Figure 5. On–Resistance Variation with

Temperature

Motorola TMOS Power MOSFET Transistor Device Data

Figure 6. Drain–T o–Source Leakage

Current versus Voltage

3