MOTOROLA MMSF10N02Z Technical data
10N02Z
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SEMICONDUCTOR TECHNICAL DATA
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Medium Power Surface Mount Products
!
EZFETs are an advanced series of power MOSFETs which
utilize Motorola’s High Cell Density HDTMOS process and contain
monolithic back–to–back zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature low R
logic level performance. They are capable of withstanding high
energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
EZFET devices are designed for use in low voltage, high speed
switching applications where power efficiency is important.
• Zener Protected Gates Provide Electrostatic Discharge Protection
• Low R
Provides Higher Efficiency and Extends Battery Life
DS(on)
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Exhibits High Speed, With Soft Recovery
• I
Specified at Elevated Temperature
DSS
• Mounting Information for SO–8 Package Provided
DS(on)
and true
Motorola Preferred Device
SINGLE TMOS
POWER MOSFET
10 AMPERES
20 VOLTS
R
D
CASE 751–05, Style 12
G
S
Source
Source
Source
Gate
DS(on)
= 0.015 OHM
SO–8
1
8
Drain
2
7
Drain
3
6
Drain
4
5
Drain
Top View
MAXIMUM RATINGS
Drain–to–Source Voltage V
Drain–to–Gate Voltage (RGS = 1.0 MΩ) V
Gate–to–Source Voltage — Continuous V
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Single Pulse (tp ≤ 10 µs)
Total Power Dissipation @ TA = 25°C (1) P
Operating and Storage Temperature Range TJ, T
Thermal Resistance — Junction to Ambient R
Maximum T emperature for Soldering T
(1) When mounted on 1 inch square FR–4 or G–10 board (VGS = 4.5 V, @ 10 Seconds)
(TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
DSS
DGR
GS
I
D
I
D
I
DM
D
θJA
L
stg
20 Vdc
20 Vdc
± 12 Vdc
10
7.0
80
2.5 Watts
– 55 to 150 °C
50 °C/W
260 °C
Adc
Apk
DEVICE MARKING ORDERING INFORMATION
Device Reel Size Tape Width Quantity
MMSF10N02ZR2 13″ 12 mm embossed tape 2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s, HDTMOS and EZFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company.
REV 2
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1997
1
MMSF10N02Z
)
f = 1.0 MHz)
(
DD
,
D
,
(
DS
,
D
,
)
dIS/dt = 100 A/µs)
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Cpk ≥ 2.0) (3)
(VGS = 0 Vdc, ID = 0.25 mAdc)
T emperature Coef ficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 12 Vdc, VDS = 0 Vdc) I
ON CHARACTERISTICS
Gate Threshold Voltage (Cpk ≥ 2.0) (3)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain–to–Source On–Resistance (Cpk ≥ 2.0) (3)
(VGS = 4.5 Vdc, ID = 10 Adc)
(VGS = 2.7 Vdc, ID = 5.0 Adc)
Forward Transconductance (VDS = 9.0 Vdc, ID = 5.0 Adc) g
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time t
Gate Charge
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
Reverse Recovery Time
Reverse Recovery Storage Charge Q
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
(1)
Cpk =
(TA = 25°C unless otherwise noted)
(VDS = 10 Vdc, VGS = 0 Vdc,
(2)
(VDD = 10 Vdc, ID = 5.0 Adc,
(IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C)
Max limit – Typ
3 x SIGMA
f = 1.0 MHz
VGS = 4.0 Vdc, RG = 10 Ω)
(VDS = 16 Vdc, ID = 10 Adc,
VGS = 4.0 Vdc)
(IS = 10 Adc, VGS = 0 Vdc)
(IS = 10 Adc, VGS = 0 Vdc,
dI
/dt = 100 A/µs
V
(BR)DSS
I
DSS
GSS
V
GS(th)
R
DS(on)
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
f
Q
Q
Q
Q
V
SD
t
rr
t
a
t
b
RR
20
—
—
—
— 0.6 1.5 µAdc
0.5
—
—
—
11 14 — Mhos
— 1 150 1225 pF
— 775 810
— 375 480
— 65 75 ns
— 360 440
— 325 640
— 575 860
T
1
2
3
— 26 32 nC
— 2.5 —
— 13 —
— 9.0 —
—
—
— 765 —
— 240 —
— 530 —
— 8.7 — µC
—
17
—
—
0.72
2.86
13
16
0.83
0.68
—
—
10
100
1.1
—
15
19
1.2
—
Vdc
mV/°C
µAdc
Vdc
mV/°C
mΩ
Vdc
ns
2
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
MMSF10N02Z
20
18
16
14
12
10
8
6
, DRAIN CURRENT (AMPS)
D
I
4
2
0
0 0.4 1.6 2
VGS = 12V
4.5 V
0.80.2 1.4 1.810.6
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
2.7 V
1.9 V
1.8 V
1.7 V
1.6 V
1.5 V
TJ = 25°C
1.2
Figure 1. On–Region Characteristics
0.03
ID = 10 A
0.025
0.02
0.015
TJ = 25
14
VDS ≥ 10 V
TJ = 25°C
12
10
8
6
, DRAIN CURRENT (AMPS)
4
D
I
2
0
0.50
VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)
100°C
25°C
TJ = –55°C
1 1.5 2 2.5
Figure 2. Transfer Characteristics
0.03
TJ = 25°C
°
C
0.025
0.02
VGS = 2.7 V
0.015
0.01
0.005
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
0
DS(on)
R
3456789101112
2
VGS, GATE–T O–SOURCE VOLT AGE (VOLTS)
Figure 3. On–Resistance versus
Gate–to–Source V oltage
1.6
VGS =4.5 V
1.4
ID = 5 A
1.2
1
0.8
0.6
0.4
0.2
, DRAIN–TO–SOURCE RESIST ANCE (NORMALIZED)
0
–50 0 50 100 150
DS(on)
R
TJ, JUNCTION TEMPERATURE (°C)
7
4.5 V
13 15
0.01
0.005
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
0
DS(on)
135 911
R
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
10000
, LEAKAGE (nA)
I
1257525–25
VGS = 0 V
1000
100
10
1
DSS
0.1
0.01
0 5 10 15 17.5
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
TJ = 125°C
100°C
25°C
12.57.5
202.5
Figure 5. On–Resistance Variation
with Temperature
Motorola TMOS Power MOSFET Transistor Device Data
Figure 6. Drain–to–Source Leakage Current
versus V oltage
3
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