MOTOROLA MMSD914T1 Technical data

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SEMICONDUCTOR TECHNICAL DATA

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The switching diode has the following features:

• SOD–123 Surface Mount Package

• High Breakdown Voltage

• Fast Speed Switching Time

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by MMSD914T1/D

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Motorola Preferred Device

1

Cathode

MAXIMUM RATINGS

Rating Symbol Value Unit

Continuous Reverse Voltage V
Peak Forward Current I
Peak Forward Surge Current I

DEVICE MARKING

MMSD914T1 = 5D

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR–5 Board

TA = 25°C

Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation

Alumina Substrate

Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature TJ, T

(2)

TA = 25°C

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Max Unit

(1)

= 25°C unless otherwise noted)

A

OFF CHARACTERISTICS

Reverse Breakdown Voltage (IBR = 100 µAdc) V
Reverse Voltage Leakage Current (VR = 20 Vdc)

Forward Voltage (IF = 10 mAdc) V
Diode Capacitance (VR = 0 Vdc, f = 1.0 MHz) C
Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) t

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina

(VR = 75 Vdc)

R

F

FM(surge)

P

D

R

q

JA

P

D

R

q

JA

stg

(BR)

I

R

F
D

rr

2

Anode

1

CASE 425–04, STYLE 1

SOD–123

100 Vdc
200 mAdc
500 mAdc

225

1.8
556 °C/W
300

2.4
417 °C/W

–55 to +150 °C

100 — Vdc

—
—

— 1000 mVdc
— 4.0 pF
— 4.0 ns

25

5.0

2

mW

mW/°C

mW

mW/°C

nAdc

m

Adc

Preferred devices are Motorola recommended choices for future use and best overall value.

Thermal Clad is a registered trademark of the Berquist Company .

REV 2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1997

1

MMSD914T1

820

Ω

+10 V

0.1 µF

2 k

100

0.1

µ

I

F

µ

H

F

t

t

r

p

10%

t

I

F

t

rr

t

Ω

OUTPUT

50

PULSE

GENERATOR

100

10

TA = 85

1.0

, FORWARD CURRENT (mA)

F

I

DUT

50 Ω INPUT

SAMPLING

OSCILLOSCOPE

Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so I
Notes: 3. tp » t

rr

V

R(peak)

R

90%

INPUT SIGNAL

is equal to 10 mA.

Figure 1. Recovery Time Equivalent Test Circuit

10

µ

1.0

°

C

TA = –40°C

TA = 25°C

, REVERSE CURRENT ( A)

R

I

0.1

0.01

I

R

TA = 150°C

TA = 125°C

TA = 85°C

TA = 55°C

i

= 1 mA

R(REC)

OUTPUT PULSE

(IF = IR = 10 mA; measured

at i

R(REC)

= 1 mA)

0.1

0.2 0.4

TA = 25°C

0.6 0.8 1.0

VF, FORWARD VOLTAGE (VOLTS)

1.2

0.001
0

10 20 30 40 50

VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Forward V oltage Figure 3. Leakage Current

0.68

0.64

0.60

, DIODE CAPACITANCE (pF)

0.56

D

C

0.52
0

2468

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Capacitance

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data