Motorola MMBR911LT1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
The RF Line
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by MMBR911LT1/D
Designed for low noise, wide dynamic range front–end amplifiers and
low–noise VCO’s. Available in a surface–mountable plastic package. This
Motorola small–signal plastic transistor offers superior quality and performance
at low cost.
• High Gain–Bandwidth Product
fT = 7.0 GHz (Typ) @ 30 mA
• Low Noise Figure
NF = 1.7 dB (Typ) @ 500 MHz
• High Gain
GNF = 17 dB (Typ) @ 10 mA/500 MHz
• State–of–the–Art Technology
Fine Line Geometry
Ion–Implanted Arsenic Emitters
Gold Top Metallization and Wires
Silicon Nitride Passivation
• Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
IC = 60 mA
LOW NOISE
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
Power Dissipation @ T
Derate linearly above T
Storage Temperature T
Maximum Junction Temperature T
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case R
DEVICE MARKING
MMBR91 1LT1 = 7P
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
case
case
= 75°C (1)
= 75°C
Rating Symbol Value Unit
P
CEO
CBO
EBO
C
D(max)
stg
Jmax
θJC
12 Vdc
20 Vdc
2.0 Vdc
60 mA
333
4.44
–55 to +150 °C
150 °C
225 °C/W
mW
mW/°C
REV 8
Motorola, Inc. 1997
MMBR911LT1MOTOROLA RF DEVICE DATA
1
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
= 25°C unless otherwise noted)
C
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage
(IC = 1.0 mA, IB = 0)
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 0.1 mA, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 30 mAdc, VCE = 10 Vdc)
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Current Gain–Bandwidth Product
(VCE = 10 Vdc, IC = 30 mAdc, f = 1.0 GHz)
FUNCTIONAL TESTS
Gain @ Noise Figure
(IC = 10 mAdc, VCE = 10 Vdc) f = 0.5 GHz
Noise Figure
(IC = 10 mAdc, VCE = 10 Vdc) f = 0.5 GHz
f = 1.0 GHz
f = 1.0 GHz
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE
C
cb
f
T
G
NF
NF
12 — — Vdc
20 — — Vdc
2.0 — — Vdc
— — 50 nAdc
30 — 200 —
— — 1.0 pF
— 6.0 — GHz
—
—
—
—
17
11
2.0
2.9
—
—
—
—
dB
dB
10
8
6
4
2
0
, CURRENT GAIN-BANDWIDTH PRODUCT (GHz)
T
010203040
f
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
f = 1 GHz
Figure 1. Current Gain–Bandwidth versus
Collector Current @ 1.0 GHz
50
MMBR911LT1
2
MOTOROLA RF DEVICE DATA
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