Motorola MMBR901LT1, MMBR901LT3, MMBR9011LT1 Datasheet
2–1
MMBR901L T1, T3 MRF9011L T1MOTOROLA RF DEVICE DATA
The RF Line
!"
Designed primarily for use in high–gain, low–noise small–signal amplifiers for
operation up to 2.5 GHz. Also usable in applications requiring fast switching
times.
• High Current–Gain — Bandwidth Product
• Low Noise Figure @ f = 1.0 GHz —
NF
(matched)
= 1.8 dB (Typ) (MRF9011LT1)
NF
(matched)
= 1.9 dB (Typ) (MMBR901LT1, T3)
• High Power Gain —
G
pe(matched)
= 13.5 dB (Typ) @ f = 1.0 GHz (MRF9011LT1)
G
pe(matched)
= 12.0 dB (Typ) @ f = 1.0 GHz (MMBR901LT1, T3)
• Guaranteed RF Parameters (MRF9011LT1)
• Surface Mounted SOT–23 & SOT–143 Offer Improved RF Performance
Lower Package Parasitics
High Gain
• Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
T3 suffix = 10,000 units per reel
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter V oltage V
CEO
15 Vdc
Collector–Base Voltage V
CBO
25 Vdc
Emitter–Base Voltage V
EBO
2.0 Vdc
Collector Current — Continuous I
C
30 mAdc
Power Dissipation @ TC = 75°C (1)
MMBR901LT1, T3;
MRF9011LT1
Derate above 25°C
P
D(max)
0.300
4.00
Watt
mW/°C
Storage Temperature Range All T
stg
–55 to +150 °C
Maximum Junction Temperature T
J(max)
150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Storage Temperature T
stg
150 °C
Thermal Resistance, Junction to Case
MRF9011LT1, MMBR901LT1, T3
R
θJC
200
°C/W
DEVICE MARKING
MRF9011LT1 = 01 MMBR901LT1, T3 = 7A
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
Order this document
by MMBR901LT1/D
SEMICONDUCTOR TECHNICAL DATA
IC = 30 mA
SURFACE MOUNTED
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
CASE 318A–05, STYLE 1
SOT–143
LOW PROFILE, MRF9011LT1
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE, MMBR901LT1, T3
Motorola, Inc. 1997
REV 8
MMBR901L T1, T3 MRF9011L T1
2–2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage
(IC = 1.0 mAdc, IB = 0)
V
(BR)CEO
15 — — Vdc
Collector–Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V
(BR)CBO
25 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V
(BR)EBO
2.0 — — Vdc
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
I
CBO
— — 50 nAdc
ON CHARACTERISTICS
DC Current Gain MMBR901L T1, T3
(IC = 5.0 mAdc, VCE = 5.0 Vdc) MRF9011LT1
h
FE
50
30
—
80
200
200
—
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product MRF9011LT1
(IC = 15 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
f
T
— 3.8 — GHz
Collector–Base Capacitance MRF9011LT1
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
C
cb
— 0.55 1.0 pF
FUNCTIONAL TESTS
Power Gain at Minimum Noise Figure MRF9011LT1
(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)
G
NFmin
— 13.5 — dB
Minimum Noise Figure (Figure 3) MRF9011LT1
(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)
NF
min
— 1.8 — dB
Insertion Gain in 50 Ω System MRF9011LT1
(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)
S21
2
9.0 10.2 — dB
Minimum Noise Figure (Figure 3)
(VCE = 6.0 Vdc, IC = 5.0 mA, f = 1.0 GHz) MMBR901LT1, T3
(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)
NF
min
— 1.9 —
dB
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IC = 5.0 mAdc, f = 1.0 GHz) MMBR901LT1
C
obo
— — 1.0 pF
Common–Emitter Amplifier Gain
(VCC = 6.0 Vdc, IC = 5.0 mAdc, f = 1.0 GHz) MMBR901LT1
G
pe
— 12 — dB
2–3
MMBR901L T1, T3 MRF9011L T1MOTOROLA RF DEVICE DATA
Figure 1. Collector–Base Capacitance
versus Collector–Base Voltage
Figure 2. Gain and Noise Figure
versus Collector Current
Figure 3. MRF9011LT1 Functional Circuit Schematic
2
1.6
1.2
0.8
0.4
0
16
12
8
4
0
0
1
2
3
4
5
6
7
8
0 2 4 6 8 10121416 036912151821 3024 27
VCB, COLLECTOR–BASE VOL TAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
V
BE
D.U.T.
RF INPUT
RF OUTPUT
**SLUG TUNER
**SLUG TUNER*BIAS
TEE
*BIAS
TEE
**MICROLAB/FXR
**SF–11N FOR f < 1 GHz
**SF–31N FOR f > 1 GHz
V
CE
f = 1 MHz
VCE = 10 Vdc
f = 1 GHz
ΓS =
ΓL = 0
Zo = 50 OHMS
CIRCUIT USED IS HP 11608A
C
cb
, COLLECTOR-BASE CAP ACITANCE (pF)
G
NF
, GAIN (dB)
NF, NOISE FIGURE (dB)
G
NF
NF
MRF9011LT1
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