Motorola MMBR5711LT1, MMBR571LT1 Datasheet

1

MMBR571LT1 MRF571 MRF5711LT1MOTOROLA RF DEVICE DATA

The RF Line

 
 

Designed for low noise, wide dynamic range front–end amplifiers and
low–noise VCO’s. Available in a surface–mountable plastic packages. This
Motorola series of small–signal plastic transistors offers superior quality and
performance at low cost.

• High Gain–Bandwidth Product

fT = 8.0 GHz (Typ) @ 50 mA

• Low Noise Figure

NF

min

= 1.6 dB (Typ) @ f = 1.0 GHz (MRF5711LT1, MRF571)

• High Gain

GNF = 17 dB (Typ) @ 30 mA/500 MHz (MMBR571LT1)

• High Power Gain

G

pe (matched)

= 13.5 dB (Typ) (MRF5711LT1)

• State–of–the–Art Technology

Fine Line Geometry
Ion–Implanted Arsenic Emitters
Gold Top Metallization and Wires
Silicon Nitride Passivation

• Available in tape and reel packaging options:

T1 suffix = 3,000 units per reel

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter V oltage V

CEO

10 Vdc

Collector–Base Voltage V

CBO

20 Vdc

Emitter–Base Voltage V

EBO

3.0 Vdc

Collector Current — Continuous I

C

80 mA

Total Device Dissipation @ T

case

= 75°C

MMBR571L T1, MRF5711LT1

Derate linearly above T

case

= 75°C @

P

D(max)

0.33

4.44WmW/°C

Total Device Dissipation (1) @ TC = 75°C

Derate above 75°C MRF571

P

D

0.58

7.73

Watts

mW/°C

Operating and Storage Temperature T

stg

–55 to

+150

°C

THERMAL CHARACTERISTICS

Rating Symbol Max Unit

Thermal Resistance, Junction to Case

MRF5711LT1, MMBR571LT1

R

θJC

225 °C/W

Thermal Resistance, Junction to Case MRF571 R

θJC

130 °C/W

Maximum Junction Temperature T

Jmax

150 °C

DEVICE MARKING

MMBR571L T1 = 7X MRF5711LT1 = 02

NOTE:

1. Case temperature measured on collector lead immediately adjacent to body of package.

Order this document

by MMBR571LT1/D



SEMICONDUCTOR TECHNICAL DATA







IC = 80 mA

LOW NOISE

HIGH–FREQUENCY

TRANSISTORS

CASE 318–08, STYLE 6

SOT–23

LOW PROFILE

MMBR571L T1

CASE 318A–05, STYLE 1

SOT–143

LOW PROFILE

MRF5711LT1

CASE 317–01, STYLE 2

MACRO–X

MRF571

 Motorola, Inc. 1997

REV 8

MMBR571LT1 MRF571 MRF5711L T1
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown V oltage (IC = 1.0 mA, IB = 0) V

(BR)CEO

10 12 — Vdc

Collector–Base Breakdown Voltage (IC = 0.1 mA, IE = 0) V

(BR)CBO

20 — — Vdc

Emitter–Base Breakdown Voltage (IE = 50 µAdc, IC = 0) V

(BR)EBO

2.5 — — Vdc

Collector Cutoff Current (VCB = 8.0 Vdc, IE = 0) I

CBO

— — 10 µAdc

ON CHARACTERISTICS

DC Current Gain (IC = 30 mAdc, VCE = 5.0 Vdc) h

FE

50 — 300 —

DYNAMIC CHARACTERISTICS

Collector–Base Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) MMBR571L T1
(VCB = 6.0 Vdc, IE = 0, f = 1.0 MHz) MRF5711LT1, MRF571

C

cb

—
—

0.7

0.75

1.0

1.0

pF

Current Gain–Bandwidth Produc

(VCE = 5.0 Vdc, IC = 50 mAdc, f = 1.0 GHz) MMBR571LT1
(VCE = 8.0 Vdc, IC = 50 mAdc, f = 1.0 GHz) MRF5711LT1, MRF571

f

T

—
—

8.0

8.0

—
—

GHz

FUNCTIONAL TESTS

Gain @ Noise Figure MRF571 f = 0.5 GHz

(IC = 10 mAdc, VCE = 6.0 Vdc) MRF571 f = 1.0 GHz

G

NF

—
10

16.5
12

—
—

dB

Noise Figure MRF571 f = 0.5 GHz

(IC = 10 mAdc, VCE = 6.0 Vdc) MRF571 f = 1.0 GHz

f = 2.0 GHz

NF —

—
—

1.0

1.5

2.8

—

2.0
—

dB

Gain @ Noise Figure

(IC = 10 mAdc, VCE = 5.0 Vdc) MMBR571LT1 f = 0.5 GHz

f = 1.0 GHz

(IC = 10 mA, VCE = 6.0 Vdc) MRF5711LT1 f = 1.0 GHz

G

NF

—
—
—

16.5

10.5

13.5

—
—
—

dB

Noise Figure

(IC = 10 mAdc, VCE = 5.0 Vdc) MMBR571LT1 f = 0.5 GHz

f = 1.0 GHz

(IC = 10 mAdc, VCE = 6.0 Vdc) MRF5711LT1 f = 1.0 GHz

NF

—
—
—

2.0

2.6

2.2

—
—
—

dB

Noise Figure

(VCE = 6.0 V , IC = 10 mA, f = 1.0 GHz) MRF5711LT1

NF

min

— 1.6 — dB

Power Gain in 50 Ω System (VCE = 6.0 V , IC = 10 mA, f = 1.0 GHz)

MRF5711LT1

|S21|

2

9.0 10 — dB

Figure 1. Maximum Available Gain

versus Frequency

Figure 2. Current Gain–Bandwidth versus

Collector Current @ 1.0 GHz

25

20

15

10

5

0

0.4 0.6 1 2 3
f, FREQUENCY (GHz)

G

A

MAX, MAXIMUM AV AILABLE GAIN (dB)

VCE = 5 V

IC = 30 mA

G

A

MAX

+

|

S

21

|

|S12|

(k"(k

2

–

1) ), kw1

Ǹ

10

8

6

4

2

0

0

IC, COLLECTOR CURRENT (mA)

f

T

, CURRENT GAIN-BANDWIDTH PRODUCT (GHz)

10 20 30 40 50 60 70 80 90 100

VCE = 5 V

f = 1 GHz

TYPICAL CHARACTERISTICS

MMBR571LT1

3

MMBR571LT1 MRF571 MRF5711L T1MOTOROLA RF DEVICE DATA

Figure 3. Input Capacitance versus

Emitter Base Voltage

SOT–23 MMBR571LT1

SOT–23 MMBR571LT1

SOT–23 MMBR571LT1

C

ib

, INPUT CAP ACITANCE (pF)

VBE, BASE–EMITTER VOLTAGE (Vdc)

4

1

3

2

1

23

0

0

f = 1 MHz

C

ib

C

cb

, OUTPUT CAP ACITANCES (pF), C

ob

Vcb, COLLECTOR–BASE VOL TAGE (Vdc)

2.5

0

2

1.5

1

0.5

0

12 345678 910

C

ob

C

cb

f = 1 MHz

G

NF

, GAIN AT NOISE FIGURE (dB)

0

IC, COLLECTOR CURRENT (mA)

20

16

12

8

4

0

10 20 30 40 50

f = 500 MHz

VCE = 5 V

TYPICAL CHARACTERISTICS

MMBR571LT1

Figure 4. Output Capacitances versus

Collector–Base Voltage

Figure 5. Gain at Noise Figure versus

Collector Current

1 GHz

Figure 6. Noise Figure versus Collector Current

SOT–23 MMBR571LT1

SOT–23 MMBR571LT1 SOT–23 MMBR571LT1

NF, NOISE FIGURE (dB)

0

IC, COLLECTOR CURRENT (mA)

5

4

3

2

1

0

10 20 30 40 50

f = 500 MHz

f = 1 GHz

VCE = 5 V

G

NF

, GAIN AT NOISE FIGURE (dB)

0.2
f, FREQUENCY (GHz)

25

20

15

10

5

0

0.3 0.5 1 1.5 2

NF, NOISE FIGURE (dB)

5

4

3

2

1

0

VCE = 5 V

IC = 10 mA

G

NF

NF

25

0.2
f, FREQUENCY (GHz)

20

15

10

5

0.3 0.6 1 2

30

1.5

GUMAX =

|S21|

2

(1 – |S11|2)(1 – |S22|2)

GUMAX

|S21|

2

VCE = 5 V

IC = 30 mA

G

U

MAX AND |S

21

|

2

(dB)

Figure 7. Gain at Noise Figure and Noise

Figure versus Frequency

Figure 8. Maximum Unilateral Gain and

Insertion Gain versus Frequency

MMBR571LT1 MRF571 MRF5711LT1
4

MOTOROLA RF DEVICE DATA

Figure 9. Collector–Base Capacitance

versus Collector–Base Voltage

Figure 10. 50 W Noise Figure

versus Frequency

Figure 11. Functional Circuit Schematic

*BIAS

TEE

**SLUG TUNER

*BIAS

TEE

**SLUG TUNER

RF OUTPUT

RF INPUT

V

BE

VCE = 6 Vdc

*

D.U.T.

**MICROLAB/FXR

**SF — 11N < 1 GHz

**SF — 31N > 1 GHz

C

cb

, COLLECTOR-BASE CAP ACITANCE (pF)

2

1.6

1.2

0.8

0.4

0

1086420

Vcb, COLLECTOR–BASE VOL TAGE (VOLTS)

0.15
f, FREQUENCY (GHz)

0.2 0.5 1 2

NF, NOISE FIGURE (dB)

5

4

3

2

1

0

f = 1 MHz

NF

VCE = 6 Vdc

IC = 5 mA

CKT = HP 11608A

Zo = 50

Ω

Γ

S

=

Γ

L

= 0

*MICROLAB

*HW–XXN
*AS APPLICABLE

TYPICAL CHARACTERISTICS

MRF5711LT1

5

MMBR571LT1 MRF571 MRF5711L T1MOTOROLA RF DEVICE DATA

G

NF

Figure 12. Gain and Noise Figure

versus Frequency

Figure 13. Gain and Noise Figure

versus Collector Current

Figure 14. Gain and Noise Figure

versus Collector Current

Figure 15. Gain Bandwidth Product

versus Collector Current

Figure 16. G

Umax

and |S21|

2

versus Frequency

Figure 17. Insertion Gain versus

Collector Current

G

NF

, GAIN (dB)

40

32

0.15
f, FREQUENCY (GHz)

0.2 0.5 1 2

NF, NOISE FIGURE (dB)

5

4

3

2

1

0

24

16

8

0

G

NF

NF

VCE = 6 Vdc

IC = 5 mA

CKT = FIGURE 3

G

NF

, GAIN (dB)

16

IC, COLLECTOR CURRENT (mA)

0

NF, NOISE FIGURE (dB)

4
3
2
1

12

8

4

0

10 20 30 40 50

G

NF

NF

VCE = 6 Vdc
f = 1 GHz
CKT = FIGURE 3

G

NF

, GAIN (dB)

IC, COLLECTOR CURRENT (mA)

0

NF, NOISE FIGURE (dB)

4
3
2
1

24

10 20 30 40 50

18

12

6

0

VCE = 6 Vdc
f = 500 MHz
CKT = FIGURE 3

NF

f , GAIN BANDWIDTH PRODUCT (GHz)

T

IC, COLLECTOR CURRENT (mA)

0

10

8

4

0

20 6040 80 100

6

2

f = 1 GHz

VCE = 8 Vdc

Zo = 50

Ω

40

32

0.15

f, FREQUENCY (GHz)

0.2 0.5 1 2

24

16

8

0

|S

21

|

2

, GAIN (dB)G

Umax

AND

G

Umax

=

|S21|

2

(1 – |S11|2)(1 – |S22|2)

G

Umax

|S21|

2

VCE = 8 Vdc

IC = 50 mA

Zo = 50

Ω

|S

21

|

2

, INSERTION GAIN (dB)

32

24

16

8

0

IC, COLLECTOR CURRENT (mA)

0 1020304050

Z

o

= 50

Ω

VCE = 6 Vdc

f = 200 MHz

1 GHz

500 MHz

TYPICAL CHARACTERISTICS

MRF5711LT1

2 GHz