Motorola MMBR5211LT1, MMBR521LT1 Datasheet
1
MMBR521LT1 MRF5211LT1MOTOROLA RF DEVICE DATA
The RF Line
Designed p rimarily f or use in t he high–gain, low–noise small–signal
amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast
switching times.
• High Current Gain–Bandwidth Product —
fT = 3.4 GHz (Typ) @ IC = –35 mAdc (MMBR521LT1)
fT = 4.2 GHz (Typ) @ IC = –50 mAdc (MRF5211LT1)
• Low Noise Figure @ f = 1.0 GHz —
NF
(matched)
= 2.5 dB (Typ) (MMBR521LT1)
NF
(matched)
= 2.8 dB (Typ) (MRF5211LT1)
• High Power Gain — G
pe (matched)
= 11 dB (Typ)
• Guaranteed RF Parameters
• Surface Mounted SOT–23 (MMBR521LT1) & SOT–143 (MRF5211LT1)
Offer Improved RF Performance
Lower Package Parasitics
Higher Gain
• Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
MAXIMUM RATINGS
Ratings Symbol Value Unit
Collector–Emitter Voltage V
CEO
–10 Vdc
Collector–Base Voltage V
CBO
–20 Vdc
Emitter–Base Voltage V
EBO
–2.5 Vdc
Power Dissipation (1) TC = 75°C,
Derate linearly above TC = 75°C @ All
P
D(max)
0.333
4.44
W
mW/°C
Collector Current — Continuous I
C
–70 mA
Maximum Junction Temperature T
Jmax
150 °C
Storage Temperature All T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Ratings Symbol Value Unit
Thermal Resistance, Junction to Case
(MMBR521LT1, MRF5211LT1)
R
θJC
225 °C/W
DEVICE MARKING
MMBR521LT1 = 7M MRF5211LT1 = 04
NOTE:
1. Case T emperature is measured on the collector lead closest to the package. For case
temperatures above +75°C: P
DISP(max)
= (T
Jmax
– TC) / R
θJC
Order this document
by MMBR521LT1/D
SEMICONDUCTOR TECHNICAL DATA
IC = –70 mA
HIGH–FREQUENCY
TRANSISTOR
PNP SILICON
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
(TO–236AA/AB)
MMBR521LT1
CASE 318A–05, STYLE 1
SOT–143
LOW PROFILE
MRF5211LT1
Motorola, Inc. 1995
REV 7
MMBR521LT1 MRF5211LT1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) V
(BR)CEO
–10 –12 — Vdc
Collector–Base Breakdown Voltage (IC = –0.1 mAdc, IE = 0) V
(BR)CBO
–20 — — Vdc
Emitter–Base Breakdown Voltage (IE = –50 µAdc, IC = 0) V
(BR)EBO
–2.5 — — Vdc
Collector Cutoff Current (VCB = –8.0 Vdc, IE = 0) I
CBO
— — –10 µAdc
ON CHARACTERISTICS
DC Current Gain (IC = –30 mAdc, VCE = –5.0 Vdc) h
FE
25 — 125 —
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance (VCB = –6.0 Vdc, IE = 0, f = 1.0 MHz) C
cb
— 1.0 1.5 pF
Current Gain — Bandwidth Product
(VCE = –8.0 V, IC = –35 mA, f = 1.0 GHz) MMBR521LT1
(VCE = –8.0 V, IC = –50 mA, f = 1.0 GHz) MRF5211LT1
f
T
—
—
3.4
4.2
—
—
GHz
FUNCTIONAL TESTS
Power Gain at Minimum Noise Figure
(VCE = –6.0 V, IC = –5.0 mA, f = 500 MHz) MMBR521LT1
(VCE = –6.0 V, IC = –5.0 mA, f = 1.0 GHz) MMBR521LT1
(VCE = –6.0 V, IC = –5.0 mA, f = 1.0 GHz) MRF5211LT1
G
NFmin
13
8.0
10
15
10
11
—
—
—
dB
Noise Figure — Minimum
(VCE = –6.0 V, IC = –5.0 mA, f = 500 MHz) MMBR521LT1
(VCE = –6.0 V, IC = –5.0 mA, f = 1.0 GHz) MMBR521LT1
(VCE = –6.0 V, IC = –5.0 mA, f = 1.0 GHz) MRF5211LT1
NF
min
—
—
—
1.5
2.5
2.8
2.5
3.5
3.5
dB
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
3
2
1
0
–10–9–8–7–6–5–4–3–2–10
VCB, COLLECTOR–BASE VOLTAGE (VOLTS)
Figure 1. Junction Capacitance versus Voltage
C
ob
C
cb
f = 1 MHz
C
ib
, INPUT CAPACITANCE (pF)
4
–1
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 2. Input Capacitance versus Voltage
3
2
1
0
0 –3–2
f = 1 MHz
Figure 3. Functional Circuit Schematic
V
BE
D.U.T.
VCE = –6 Vdc
RF INPUT
RF OUTPUT
*BIAS
TEE
**SLUG TUNER
*MICROLAB
*HW–XXN
*AS APPLICABLE
**MICROLAB/FXR
**SF — 11N < 1 GHz
**SF — 311N
≥
1 GHz
*BIAS
TEE
**SLUG TUNER
3
MMBR521LT1 MRF5211LT1MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
MMBR521LT1
f
T
, CURRENT GAIN BANDWIDTH PRODUCT (GHz)
4
–80
IC, COLLECTOR CURRENT (mA)
Figure 4. Current Gain Bandwidth Product
versus Collector Current
3
2
1
–60–40–200
VCE = 8 V
6 V
20
1.5
FREQUENCY (GHz)
Figure 5. Minimum Noise Figure & Gain @
Noise Figure versus Frequency
1.00.80.60.50.40.3
18
16
14
12
10
8
G
NF
, GAIN @ NOISE FIGURE (dB)
4
3
2
1
N
F
, NOISE FIGURE (dB)
VCE = –6 V, IC = 5 mA
Γ
SOURCE
=
Γ
OPT
Figure 6. Minimum Noise Figure & Gain @ Noise
Figure versus Collector Current
18
IC, COLLECTOR CURRENT (mA)
Figure 7. Minimum Noise Figure & Gain @ Noise
Figure versus Collector Current
1.0
G
NF
, GAIN @ NOISE FIGURE (dB)
3.0
N
F
, NOISE FIGURE (dB)
17
16
15
14
13
12
11
10
2.0 3.0 5.0 10 20 30 40 50
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
f = 500 MHz
GNF
GNF
NF
min
VCE = –6 V
IC, COLLECTOR CURRENT (mA)
1.0
G
NF
, GAIN @ NOISE FIGURE (dB)
N
F
, NOISE FIGURE (dB)
12
11
10
9
8
7
2.0 3.0 5.0 10 20 30 40 50
4.5
4.0
3.5
3.0
2.5
2.0
f = 1000 MHzGNF
VCE = –6 V
NF
min
NF
min
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