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MMBR4957LT1, T3MOTOROLA RF DEVICE DATA
The RF Line
#$ !!"
. . . designed for high–gain, low–noise amplifier oscillator and mixer applications. Specifically packaged for thick and thin–film circuits using surface mount
components.
• High Gain — Gpe = 17 dB Typ @ f = 450 MHz
• Low Noise — NF = 3.0 dB Typ @ f = 450 MHz
• Available in tape and reel packaging options by adding suffix:
T1 suffix = 3,000 units per reel
T3 suffix = 10,000 units per reel
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
–30 Vdc
Collector–Base Voltage V
CBO
–30 Vdc
Emitter–Base Voltage V
EBO
–3.0 Vdc
Collector Current — Continuous I
C
–30 mAdc
Maximum Junction Temperature T
Jmax
150 °C
Power Dissipation, T
case
= 75°C*
Derate linearly above T
case
= 75°C @
P
D(max)
0.278
3.70
W
mW/°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Storage Temperature T
stg
–55 to +150 °C
Thermal Resistance Junction to Case* R
θJC
270 °C/W
*Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
DEVICE MARKING
MMBR4957LT1, T3 = 7F
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) V
(BR)CEO
–30 — — Vdc
Collector–Base Breakdown Voltage (IC = –100 µAdc, IE = 0) V
(BR)CBO
–30 — — Vdc
Emitter–Base Breakdown Voltage (IE = –100 µAdc, IC = 0) V
(BR)EBO
–3.0 — — Vdc
Collector Cutoff Current (VCB = –10 Vdc, IC = 0) I
CBO
— — –0.1 µAdc
ON CHARACTERISTICS
DC Current Gain (IC = –2.0 mAdc, VCE = –10 Vdc) h
FE
20 — 150 —
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IE = –2.0 mAdc, VCE = –10 Vdc, f = 100 MHz)
f
T
— 1200 — MHz
Collector–Base Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
C
cb
— — 0.8 pF
Common–Emitter Amplifier Power Gain
(VCE = –10 Vdc, IC = –2.0 mAdc, f = 450 MHz)
G
pe
— 17 — dB
Noise Figure (IC = –2.0 mAdc, VCE = –10 Vdc, f = 450 MHz) NF — 3.0 — dB