Motorola MMBFU310LT1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
N–Channel
3
GATE
2 SOURCE
Order this document
by MMBFU310LT1/D
Motorola Preferred Device
1 DRAIN
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
Gate–Source Voltage V
Gate Current I
DS
GS
G
25 Vdc
25 Vdc
10 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature TJ, T
(1)
P
D
R
q
JA
stg
225
1.8
556 °C/W
–55 to +150 °C
mW/°C
DEVICE MARKING
MMBFU310LT1 = 6C
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
A
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = –1.0 µAdc, VDS = 0) V
Gate 1 Leakage Current (VGS = –15 Vdc, VDS = 0) I
Gate 2 Leakage Current (VGS = –15 Vdc, VDS = 0, TA = 125°C) I
Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) V
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current (VDS = 10 Vdc, VGS = 0) I
Gate–Source Forward Voltage (IG = 10 mAdc, VDS = 0) V
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
Output Admittance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
Input Capacitance
(VGS = –10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Reverse Transfer Capacitance
(VGS = –10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
1. FR–5 = 1.0 0.75 0.062 in.
3
1
2
CASE 318–08, STYLE 10
SOT–23 (TO–236AB)
mW
Symbol Min Max Unit
(BR)GSS
G1SS
G2SS
GS(off)
DSS
GS(f)
|Yfs| 10 18 mmhos
|yos| — 250 µmhos
C
iss
C
rss
–25 — Vdc
— –150 pA
— –150 nAdc
–2.5 –6.0 Vdc
24 60 mAdc
— 1.0 Vdc
— 5.0 pF
— 2.5 pF
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
1
MMBFU310LT1
50
Ω
SOURCE
C3
L1
C5
1.0 k
C1 = C2 = 0.8 – 10 pF, JFD #MVM010W.
C3 = C4 = 8.35 pF Erie #539–002D.
C5 = C6 = 5000 pF Erie (2443–000).
C7 = 1000 pF, Allen Bradley #F A5C.
RFC = 0.33 µH Miller #9230–30.
L1 = One Turn #16 Cu, 1/4″ I.D. (Air Core).
L2P = One Turn #16 Cu, 1/4″ I.D. (Air Core).
L2S = One Turn #16 Cu, 1/4″ I.D. (Air Core).
C1
U310
+V
DD
C7
C2
RFC
L2
C6
L2
P
S
C4
Figure 1. 450 MHz Common–Gate Amplifier Test Circuit
Ω
50
LOAD
70
60
50
40
30
, DRAIN CURRENT (mA)I
20
D
10
–5.0 –4.0 –3.0 –2.0
VDS = 10 V
I
DSS
+25
°
C
ID – VGS, GATE–SOURCE VOLTAGE (VOLTS)
I
– VGS, GATE–SOURCE CUTOFF VOLTAGE (VOLTS)
DSS
TA = –55°C
–55°C
+25°C
–1.0 0
Figure 2. Drain Current and Transfer
Characteristics versus Gate–Source V oltage
100 k
µ
Y
fs
10 k
V
1.0 k
, FORWARD TRANSCONDUCTANCE ( mhos)Y
fs
100
0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
Y
os
ID, DRAIN CURRENT (mA)
GS(off)
V
GS(off)
= –2.3 V =
= –5.7 V =
+25°C
+150°C
+150°C
Y
fs
1.0 k
100
10
1.0
70
60
50
40
30
20
10
0
µ
, OUTPUT ADMITTANCE ( mhos)Y
os
, SATURATION DRAIN CURRENT (mA)
DSS
I
35
30
VDS = 10 V
f = 1.0 MHz
25
20
15
10
5.0
, FORWARD TRANSCONDUCTANCE (mmhos)Y
fs
0
5.0 4.0 3.0 2.0
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 3. Forward Transconductance
versus Gate–Source V oltage
10
7.0
4.0
CAPACITANCE (pF)
1.0
0
VGS, GATE SOURCE VOLTAGE (VOLTS)
TA = –55°C
+25°C
+150°C
–55°C
5.0 4.0 3.0 2.0 1.0 06.07.08.09.010
+25°C
+150°C
1.0 0
R
DS
C
gs
C
gd
120
96
72
48
24
0
, ON RESISTANCE (OHMS)R
DS
Figure 4. Common–Source Output
Admittance and Forward Transconductance
versus Drain Current
2
Figure 5. On Resistance and Junction
Capacitance versus Gate–Source V oltage
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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