Motorola MMBF5484LT1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
N–Channel
3
GATE
2 SOURCE
Order this document
by MMBF5484LT1/D
Motorola Preferred Device
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Gate Voltage V
Reverse Gate–Source Voltage V
Forward Gate Current I
Continuous Device Dissipation at or Below
TC = 25°C
Linear Derating Factor
Storage Channel Temperature Range T
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature TJ, T
(1)
DEVICE MARKING
MMBF5484LT1 = 6B
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Max Unit
= 25°C unless otherwise noted)
A
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = –1.0 µAdc, VDS = 0)
Gate Reverse Current
(VGS = –20 Vdc, VDS = 0)
(VGS = –20 Vdc, VDS = 0, TA = 100°C)
Gate Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Output Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
1. FR–5 = 1.0 0.75 0.062 in.
DG
GS(r)
G(f)
P
stg
P
R
q
D
D
JA
stg
1 DRAIN
25 Vdc
25 Vdc
10 mAdc
200
2.8
–65 to +150 °C
225
1.8
556 °C/W
–55 to +150 °C
mW
mW/°C
mW
mW/°C
V
3
1
2
CASE 318–08, STYLE 10
SOT–23 (TO–236AB)
(BR)GSS
I
GSS
V
GS(off)
I
DSS
|Yfs| 3000 6000 µmhos
|yos| — 50 µmhos
–25 — Vdc
—
—
–0.3 –3.0 Vdc
1.0 5.0 mAdc
–1.0
–0.2
nAdc
µAdc
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
1
MMBF5484LT1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
SMALL–SIGNAL CHARACTERISTICS (Continued)
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f = 10 MHz)
Output Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VDS = 15 Vdc, ID = 1.0 mAdc, YG′ = 1.0 mmhos)
(RG = 1.0 kΩ, f = 100 MHz)
(VDS = 15 Vdc, VGS = 0, YG′ = 1.0 µmhos)
(RG = 1.0 MΩ, f = 1.0 kHz)
Common Source Power Gain
(VDS = 15 Vdc, ID = 1.0 mAdc, f = 100 MHz)
POWER GAIN
C
iss
C
rss
C
oss
NF
G
ps
— 5.0 pF
— 1.0 pF
— 2.0 pF
dB
—
—
16 25 dB
3.0
2.5
24
20
16
12
, POWER GAIN (dB)
G
P
8.0
4.0
0 4.0 6.0 8.0 10 12 14
f = 100 MHz
2.0
400 MHz
T
channel
VDS = 15 Vdc
VGS = 0 V
ID, DRAIN CURRENT (mA)
= 25°C
Figure 1. Effects of Drain Current
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBF5484LT1
NEUTRALIZING
COIL
INPUT
TO 50
SOURCE
*L1 17 turns, (approx. — depends upon circuit layout) AWG #28
enameled copper wire, close wound on 9/32″ ceramic coil
form. Tuning provided by a powdered iron slug.
*L2 4–1/2 turns, AWG #18 enameled copper wire, 5/16″ long,
3/8″ I.D. (AIR CORE).
*L3 3–1/2 turns, AWG #18 enameled copper wire, 1/4″ long,
3/8″ I.D. (AIR CORE).
C1
Ω
Adjust VGS for
ID = 50 mA
VGS < 0 Volts
′
g
L1
C5
L3R
C6
C2
CASE
V
NOTE: The noise source is a hot–cold body
COMMON
GS
V
+15 V
(AIL type 70 or equivalent) with a
test receiver (AIL type 136 or equivalent).
Figure 2. 100 MHz and 400 MHz Neutralized Test Circuit
10
ID = 5.0 mA
8.0
C4
L2
C7
DS
ID = 5.0 mA
NOISE FIGURE
(T
channel
C3
= 25°C)
Reference
Designation
C1
TO 500
Ω
LOAD
**L1 6 turns, (approx. — depends upon circuit layout) AWG #24
enameled copper wire, close wound on 7/32″ ceramic coil
form. Tuning provided by an aluminum slug.
**L2 1 turn, AWG #16 enameled copper wire, 3/8″ I.D.
(AIR CORE).
**L3 1/2 turn, AWG #16 enameled copper wire, 1/4″ I.D.
(AIR CORE).
C2 1000 pF 17 pF
C3 3.0 pF 1.0 pF
C4 1–12 pF 0.8–8.0 pF
C5 1–12 pF 0.8–8.0 pF
C6 0.0015 µF 0.001 µF
C7 0.0015 µF 0.001 µF
L1 3.0 µH* 0.2 µH**
L2 0.15 µH* 0.03 µH**
L3 0.14 µH* 0.022 µH**
VALUE
100 MHz 400 MHz
7.0 pF 1.8 pF
6.5
5.5
VDS = 15 V
VGS = 0 V
6.0
f = 400 MHz
4.0
NF, NOISE FIGURE (dB)
2.0
100 MHz
0
0 4.0 6.0 8.0 10 12 14
2.0
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 3. Effects of Drain–Source Voltage Figure 4. Effects of Drain Current
4.5
3.5
NF, NOISE FIGURE (dB)
16 18 20
2.5
1.5
0 4.0 6.0 8.0 10 12 14
100 MHz
2.0
INTERMODULA TION CHARACTERISTICS
+40
+20
VDS = 15 Vdc
0
–20
f1 = 399 MHz
f2 = 400 MHz
–40
–60
–80
–100
–120
out
P , OUTPUT POWER PER TONE (dB)
–140
–160
FUNDAMENT AL
OUTPUT @ I
0.25 I
DSS
DSS
–120 –100 –80 –60 –40 –20 0 +20
Pin, INPUT POWER PER TONE (dB)
3RD ORDER INTERCEPT
,
3RD ORDER IMD
OUTPUT @ I
0.25 I
DSS
f = 400 MHz
ID, DRAIN CURRENT (mA)
,
DSS
Figure 5. Third Order Intermodulation Distortion
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
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