Motorola MMBF5457LT1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
N–Channel
GATE
Order this document
by MMBF5457LT1/D
2 SOURCE
3
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
Drain–Gate Voltage V
Reverse Gate–Source Voltage V
Gate Current I
DS
DG
GS(r)
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature TJ, T
(1)
P
R
q
DEVICE MARKING
MMBF5457LT1 = 6D
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
A
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = 10 µAdc, VDS = 0)
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0)
(VGS = 15 Vdc, VDS = 0, TA = 100°C)
Gate Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
Gate Source Voltage
(VDS = 15 Vdc, ID = 100 µAdc)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
1. FR–5 = 1.0 0.75 0.062 in.
2. Pulse Test: Pulse Width ≤ 630 ms, Duty Cycle ≤ 10%.
(2)
1 DRAIN
1
CASE 318–08, STYLE 10
25 Vdc
25 Vdc
25 Vdc
G
D
JA
stg
10 mAdc
225
1.8
556 °C/W
–55 to +150 °C
mW
mW/°C
Symbol Min Typ Max Unit
V
(BR)GSS
I
GSS
V
GS(off)
V
I
DSS
GS
25 — — Vdc
—
—
0.5 — –6.0 Vdc
— –2.5 — Vdc
1.0 — 5.0 mAdc
SOT–23 (TO–236AB)
—
—
3
2
nAdc
1.0
200
Thermal Clad is a trademark of the Bergquist Company
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
1
MMBF5457LT1
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
(TA = 25°C unless otherwise noted) (Continued)
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Reverse Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
2. Pulse Test: Pulse Width ≤ 630 ms, Duty Cycle ≤ 10%.
(2)
TYPICAL CHARACTERISTICS
5
VDS = 15 V
4
3
VGS = 0
RS = 1 M
|Yfs| 1000 — 5000 µmhos
|yrs| — 10 50 µmhos
C
iss
C
rss
14
12
W
10
8
— 4.5 7.0 pF
— 1.5 3.0 pF
VDS = 15 V
VGS = 0
f = 1 kHz
2
NF, NOISE FIGURE (dB)
1
0
0.01
0.1 1.0 10
f, FREQUENCY (kHz)
Figure 1. Noise Figure versus Frequency
1.2
V
^ –1.2 V
GS(off)
1.0
0.8
0.6
0.4
, DRAIN CURRENT (mA)
D
I
0.2
0
0 5 10 15 20
VDS, DRAIN– SOURCE VOLT AGE (VOLTS)
Figure 3. T ypical Drain Characteristics
VGS = 0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
6
NF, NOISE FIGURE (dB)
4
2
100
25
0
0.001 0.01 0.1 1.0
1.2
1.0
0.8
0.6
0.4
, DRAIN CURRENT (mA)
D
I
0.2
0
–1.2
RS, SOURCE RESISTANCE (Megohms)
Figure 2. Noise Figure versus Source
Resistance
V
^ –1.2 V
GS(off)
VDS = 15 V
–0.8 –0.4 0
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 4. Common Source Transfer
Characteristics
10
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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