Motorola MMBF4416LT1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
N–Channel
3
GATE
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
Drain–Gate Voltage V
Gate–Source Voltage V
Gate Current I
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature TJ, T
(1)
DEVICE MARKING
MMBF4416LT1 = M6A
DS
DG
GS
G
P
D
R
q
JA
stg
30 Vdc
30 Vdc
30 Vdc
10 mAdc
225
1.8
556 °C/W
–55 to +150 °C
2 SOURCE
1 DRAIN
mW
mW/°C
Order this document
by MMBF4416LT1/D
Motorola Preferred Device
3
1
2
CASE 318–08, STYLE 10
SOT–23 (TO–236AB)
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = 1.0 µAdc, VDS = 0)
Gate Reverse Current
(VGS = 20 Vdc, VDS = 0)
(VGS = 20 Vdc, VDS = 0, TA = 150°C)
Gate Source Cutoff Voltage
(ID = 1.0 nAdc, VDS = 15 Vdc)
Gate Source Voltage
(ID = 0.5 mAdc, VDS = 15 Vdc)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(VGS = 15 Vdc, VGS = 0)
Gate–Source Forward Voltage
(IG = 1.0 mAdc, VDS = 0)
1. FR–5 = 1.0 0.75 0.062 in.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Symbol Min Max Unit
V
(BR)GSS
I
GSS
V
GS(off)
V
GS
I
DSS
V
GS(f)
30 — Vdc
—
—
— –6.0 Vdc
–1.0 –5.5 Vdc
5.0 15 mAdc
— 1.0 Vdc
1.0
200
nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
1
MMBF4416LT1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Output Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f = 10 MHz)
Output Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VDS = 15 Vdc, ID = 5.0 mAdc, Rg ≈ 1000 Ω, f = 100 MHz)
(VDS = 15 Vdc, ID = 5.0 mAdc, Rg ≈ 1000 Ω, f = 400 MHz)
Common Source Power Gain
(VDS = 15 Vdc, ID = 5.0 mAdc, f = 100 MHz)
(VDS = 15 Vdc, ID = 5.0 mAdc, f = 400 MHz)
|Yfs| 4500 7500 µmhos
|yos| — 50 µmhos
C
iss
C
rss
C
oss
NF
G
ps
— 4.0 pF
— 0.8 pF
— 2.0 pF
—
—
18
10
2.0
4.0
—
—
dB
dB
POWER GAIN
24
20
16
12
, POWER GAIN (dB)
G
P
8.0
4.0
0 4.0 6.0 8.0 10 12 14
f = 100 MHz
400 MHz
T
channel
VDS = 15 Vdc
VGS = 0 V
2.0
ID, DRAIN CURRENT (mA)
Figure 1. Effects of Drain Current
= 25°C
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBF4416LT1
NEUTRALIZING
COIL
INPUT
TO 50
SOURCE
*L1 17 turns, (approx. — depends upon circuit layout) AWG #28
enameled copper wire, close wound on 9/32″ ceramic coil
form. Tuning provided by a powdered iron slug.
*L2 4–1/2 turns, AWG #18 enameled copper wire, 5/16″ long,
3/8″ I.D. (AIR CORE).
*L3 3–1/2 turns, AWG #18 enameled copper wire, 1/4″ long,
3/8″ I.D. (AIR CORE).
C1
Ω
Adjust VGS for
ID = 50 mA
VGS < 0 Volts
′
g
L1
C5
L3R
C6
C2
CASE
V
NOTE: The noise source is a hot–cold body
COMMON
GS
V
+15 V
(AIL type 70 or equivalent) with a
test receiver (AIL type 136 or equivalent).
Figure 2. 100 MHz and 400 MHz Neutralized Test Circuit
10
ID = 5.0 mA
8.0
C4
L2
C7
DS
ID = 5.0 mA
NOISE FIGURE
(T
channel
C3
= 25°C)
Reference
Designation
C1
TO 500
Ω
LOAD
**L1 6 turns, (approx. — depends upon circuit layout) AWG #24
enameled copper wire, close wound on 7/32″ ceramic coil
form. Tuning provided by an aluminum slug.
**L2 1 turn, AWG #16 enameled copper wire, 3/8″ I.D.
(AIR CORE).
**L3 1/2 turn, AWG #16 enameled copper wire, 1/4″ I.D.
(AIR CORE).
C2 1000 pF 17 pF
C3 3.0 pF 1.0 pF
C4 1–12 pF 0.8–8.0 pF
C5 1–12 pF 0.8–8.0 pF
C6 0.0015 µF 0.001 µF
C7 0.0015 µF 0.001 µF
L1 3.0 µH* 0.2 µH**
L2 0.15 µH* 0.03 µH**
L3 0.14 µH* 0.022 µH**
VALUE
100 MHz 400 MHz
7.0 pF 1.8 pF
6.5
5.5
VDS = 15 V
VGS = 0 V
6.0
f = 400 MHz
4.0
NF, NOISE FIGURE (dB)
2.0
100 MHz
0
0 4.0 6.0 8.0 10 12 14
2.0
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 3. Effects of Drain–Source Voltage Figure 4. Effects of Drain Current
4.5
3.5
NF, NOISE FIGURE (dB)
16 18 20
2.5
1.5
0 4.0 6.0 8.0 10 12 14
100 MHz
2.0
INTERMODULA TION CHARACTERISTICS
+40
+20
VDS = 15 Vdc
0
–20
f1 = 399 MHz
f2 = 400 MHz
–40
–60
–80
–100
–120
out
P , OUTPUT POWER PER TONE (dB)
–140
–160
FUNDAMENT AL
OUTPUT @ I
0.25 I
DSS
DSS
–120 –100 –80 –60 –40 –20 0 +20
Pin, INPUT POWER PER TONE (dB)
3RD ORDER INTERCEPT
,
3RD ORDER IMD
OUTPUT @ I
0.25 I
DSS
f = 400 MHz
ID, DRAIN CURRENT (mA)
,
DSS
Figure 5. Third Order Intermodulation Distortion
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
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