Motorola MMBF2202PT1 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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Part of the GreenLine Portfolio of devices with energy–con-
serving traits.
These miniature surface mount MOSFET s utilize Motorola’ s High
Cell Density, HDTMOS process. Low r
DS(on)
assures minimal
power loss and conserves energy, making this device ideal for use
in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and battery–
powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
• Low r
DS(on)
Provides Higher Efficiency and Extends Battery Life
• Miniature SC–70/SOT–323 Surface Mount Package Saves
Board Space
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage V
DSS
20 Vdc
Gate–to–Source Voltage — Continuous V
GS
± 20 Vdc
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current (tp ≤ 10 µs)
I
D
I
D
I
DM
300
240
750
mAdc
Total Power Dissipation @ TA = 25°C
(1)
Derate above 25°C
P
D
150
1.2
mW
mW/°C
Operating and Storage Temperature Range TJ, T
stg
– 55 to 150 °C
Thermal Resistance — Junction–to–Ambient R
θJA
833 °C/W
Maximum Lead Temperature for Soldering Purposes, for 10 seconds T
L
260 °C
DEVICE MARKING
P3
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device Reel Size Tape Width Quantity
MMBF2202PT1 7″ 8 mm embossed tape 3000
MMBF2202PT3 13″ 8 mm embossed tape 10,000
GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBF2202PT1/D
SEMICONDUCTOR TECHNICAL DATA
P–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
r
DS(on)
= 2.2 OHM
Motorola Preferred Device
3 DRAIN
1
GATE
2 SOURCE
CASE 419–02, STYLE 7
SC–70/SOT–323
Motorola, Inc. 1995
REV 1
MMBF2202PT1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µA)
V
(BR)DSS
20 — — Vdc
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
I
DSS
—
—
—
—
1.0
10
µAdc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) I
GSS
— — ±100 nAdc
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
V
GS(th)
1.0 1.7 2.4 Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 200 mAdc)
(VGS = 4.5 Vdc, ID = 50 mAdc)
r
DS(on)
—
—
1.5
2.0
2.2
3.5
Ohms
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) g
FS
— 600 — mMhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 5.0 V) C
iss
— 50 — pF
Output Capacitance (VDS = 5.0 V) C
oss
— 45 —
Transfer Capacitance (VDG = 5.0 V) C
rss
— 20 —
SWITCHING CHARACTERISTICS
(2)
Turn–On Delay Time
t
d(on)
— 2.5 —
Rise Time
t
r
— 1.0 —
Turn–Off Delay Time
RL = 75 Ω, ID = 200 mAdc,
V
GEN
= –10 V, RG = 6.0 Ω)
t
d(off)
— 16 —
Fall Time
GEN
= –10 V, RG = 6.0 Ω)
t
f
— 8.0 —
Gate Charge (See Figure 5) (VDS = 16 V, VGS = 10 V,
ID = 200 mA)
Q
T
— 2700 — pC
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current I
S
— — 0.3 A
Pulsed Current I
SM
— — 0.75
Forward Voltage
(2)
V
SD
— 1.5 — V
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
Figure 1. On Resistance versus Gate–Source Voltage
10
0
VGS, GATE–SOURCE VOLTAGE (VOLTS)
ID = 200 mA8
6
4
2
0
1 2 3 4 5 6 7 8 9 10
r
DS(on)
, ON RESISTANCE (OHMS)
Figure 2. On Resistance versus Temperature
4.0
–40
TEMPERATURE (°C)
VGS = 10 V
ID = 200 mA
3.5
3.0
2.5
2.0
0
–20 0 20 40 60 80 100 120 140 160
r
DS(on)
, ON RESISTANCE (OHMS)
1.5
1.0
0.5
VGS = 4.5 V
ID = 50 mA
(VDD = –15 Vdc,
ns
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