Motorola MMBF2201NT3, MMBF2201NT1 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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Part of the GreenLine Portfolio of devices with energy–con-
serving traits.
These miniature surface mount MOSFETs utilize Motorola’s
High Cell Density, HDTMOS process. Low r
DS(on)
assures
minimal power loss and conserves energy, making this device
ideal for use in small power management circuitry. Typical
applications are dc–dc converters, power management in
portable and battery–powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
• Low r
DS(on)
Provides Higher Efficiency and Extends Battery
Life
• Miniature SC–70/SOT–323 Surface Mount Package Saves
Board Space
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain–to–Source Voltage V
DSS
20 Vdc
Gate–to–Source Voltage — Continuous V
GS
± 20 Vdc
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current (tp ≤ 10 µs)
I
D
I
D
I
DM
300
240
750
mAdc
Total Power Dissipation @ TA = 25°C
(1)
Derate above 25°C
P
D
150
1.2
mW
mW/°C
Operating and Storage Temperature Range TJ, T
stg
– 55 to 150 °C
Thermal Resistance — Junction–to–Ambient R
θJA
833 °C/W
Maximum Lead Temperature for Soldering Purposes, for 10 seconds T
L
260 °C
DEVICE MARKING
N1
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device Reel Size Tape Width Quantity
MMBF2201NT1 7″ 8 mm embossed tape 3000
MMBF2201NT3 13″ 8 mm embossed tape 10,000
GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBF2201NT1/D
SEMICONDUCTOR TECHNICAL DATA
CASE 419–02, Style 8
SC–70/SOT–323
N–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
r
DS(on)
= 1.0 OHM
Motorola Preferred Device
1
2
3
Motorola, Inc. 1998
3 DRAIN
1
GATE
2 SOURCE
REV 2
MMBF2201NT1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µA)
V
(BR)DSS
20 — — Vdc
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
I
DSS
—
—
—
—
1.0
10
µAdc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) I
GSS
— — ±100 nAdc
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
V
GS(th)
1.0 1.7 2.4 Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 300 mAdc)
(VGS = 4.5 Vdc, ID = 100 mAdc)
r
DS(on)
—
—
0.75
1.0
1.0
1.4
Ohms
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) g
FS
— 450 — mMhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 5.0 V) C
iss
— 45 — pF
Output Capacitance (VDS = 5.0 V) C
oss
— 25 —
Transfer Capacitance (VDG = 5.0 V) C
rss
— 5.0 —
SWITCHING CHARACTERISTICS
(2)
Turn–On Delay Time
t
d(on)
— 2.5 —
ns
Rise Time
(VDD = 15 Vdc, ID = 300 mAdc,
t
r
— 2.5 —
Turn–Off Delay Time
(
DD
,
D
,
RL = 50 Ω)
t
d(off)
— 15 —
Fall Time t
f
— 0.8 —
Gate Charge (See Figure 5) Q
T
— 1400 — pC
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current I
S
— — 0.3 A
Pulsed Current I
SM
— — 0.75
Forward Voltage
(2)
V
SD
— 0.85 — V
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
TYPICAL CHARACTERISTICS
Figure 1. Typical Drain Characteristics
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 2. On Resistance versus Temperature
TEMPERATURE (°C)
I
D
, DRAIN CURRENT (AMPS)
R
DS
, ON RESISTANCE (OHMS)
0.5
0.6
0.7
0.8
0.9
1.0
0
4087910
0.6
0.8
1.0
1.2
1.4
1.6
0
–60
123 5
6
0.1
0.2
0.3
0.4
0.4
0.2
–40 –20 0 20 40 60 80 100 120 140 160
VGS = 4 V
VGS = 3.5 V
VGS = 2.5 V
VGS = 3 V
VGS = 4.5 V
VGS = 10 V
ID = 100 mA
ID = 300 mA
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