Motorola MMBF170LT1 Datasheet
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SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBF170LT1/D
N–Channel
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
Drain–Gate Voltage V
Gate–Source Voltage
— Continuous
— Non–repetitive (tp ≤ 50 ms)
Drain Current – Continuous
Pulsed
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature TJ, T
(1)
DEVICE MARKING
MMBF170LT1 = 6Z
V
V
I
R
DSS
DGS
GS
GSM
I
D
DM
P
D
q
JA
stg
1
GATE
SOURCE
60 Vdc
60 Vdc
±20
±40
0.5
0.8
225
1.8
556 °C/W
–55 to +150 °C
Vdc
Vpk
Adc
mW
mW/°C
DRAIN
3
2
3
1
2
CASE 318–08, STYLE 21
SOT–23 (TO–236AB)
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
C
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA)
Gate–Body Leakage Current, Forward (V
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) V
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 200 mA) r
On–State Drain Current (VDS = 25 Vdc, VGS = 0) I
(2)
= 15 Vdc, VDS = 0) I
GSF
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn–On Delay Time
Turn–Off Delay Time
1. FR–5 = 1.0 0.75 0.062 in.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
REV 2
(2)
(VDD = 25 Vdc, ID = 500 mA, R
Figure 1
= 50 W)
en
V
(BR)DSS
GSS
GS(th)
DS(on)
D(off)
C
iss
t
d(on)
t
d(off)
60 — Vdc
— 10 nAdc
0.8 3.0 Vdc
— 5.0
— 0.5
— 60 pF
— 10
— 10
W
m
ns
A
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
1
MMBF170LT1
PULSE
GENERATOR
50
W
Figure 1. Switching Test Circuit Figure 2. Switching Waveform
V
in
40 pF
50 W1 M
125
+25 V
W
W
20 dB 50
ATTENUATOR
W
TO SAMPLING
SCOPE
50
W
INPUT
V
out
t
on
t
d(on)
OUTPUT
INVERTED
V
out
INPUT
10%
V
in
(Vin AMPLITUDE 10 VOLTS)
t
r
90%
10%
50%
PULSE WIDTH
t
d(off)
90%
90%
50%
t
off
t
f
2.0
1.8
TA = 25°C
1.6
1.4
1.2
1.0
0.8
0.6
, DRAIN CURRENT (AMPS)
D
I
0.4
0.2
0
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
VGS = 10 V
9 V
8 V
7 V
6 V
5 V
4 V
3 V
100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
Figure 3. Ohmic Region
2.4
2.2
VGS = 10 V
2.0
ID = 200 mA
1.8
1.6
1.4
1.2
(NORMALIZED)
1.0
0.8
, STA TIC DRAIN–SOURCE ON–RESISTANCE
0.6
0.4
DS(on)
r
–60 –20 +20 +60 +100 +140 –60 –20 +20 +60 +100 +140
°
T, TEMPERA TURE (
C)
1.0
VDS = 10 V
0.8
0.6
0.4
, DRAIN CURRENT (AMPS)
D
I
0.2
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
, THRESHOLD VOLTAGE (NORMALIZED)
0.75
GS(th)
V
0.7
–55°C
125°C
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
VDS = V
ID = 1.0 mA
T, TEMPERA TURE (°C)
25°C
100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
GS
Figure 5. T emperature versus Static
Drain–Source On–Resistance
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 6. T emperature versus Gate
Threshold V oltage
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