Motorola MMBF0201N Datasheet

1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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These miniature surface mount MOSFET s utilize Motorola’ s High

Cell Density, HDTMOS process. Low r

DS(on)

assures minimal
power loss and conserves energy, making this device ideal for use
in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and battery–
powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.

• Low r

DS(on)

Provides Higher Efficiency and Extends Battery Life

• Miniature SOT–23 Surface Mount Package Saves Board Space

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted)

Rating

Symbol Value Unit

Drain–to–Source Voltage V

DSS

20 Vdc

Gate–to–Source Voltage — Continuous V

GS

± 20 Vdc

Drain Current — Continuous @ TA = 25°C

Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current (tp ≤ 10 µs)

I

D

I

D

I

DM

300
240
750

mAdc

Total Power Dissipation @ TA = 25°C

(1)

P

D

225 mW

Operating and Storage Temperature Range TJ, T

stg

– 55 to 150 °C

Thermal Resistance — Junction–to–Ambient R

θJA

625 °C/W

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T

L

260 °C

DEVICE MARKING

N1

(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.

ORDERING INFORMATION

Device Reel Size Tape Width Quantity

MMBF0201NLT1 7″ 12 mm embossed tape 3000
MMBF0201NLT3 13″ 12 mm embossed tape 10,000

HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a registered trademark of the Berquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MMBF0201N/D



SEMICONDUCTOR TECHNICAL DATA

CASE 318–07, Style 21

SOT–23 (TO–236AB)



N–CHANNEL

ENHANCEMENT–MODE

TMOS MOSFET

r

DS(on)

= 1.0 OHM

Motorola Preferred Device



1

2

3

3 DRAIN

1
GATE

2 SOURCE

 Motorola, Inc. 1995

MMBF0201N

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 10 µA)

V

(BR)DSS

20 — — Vdc

Zero Gate Voltage Drain Current

(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)

I

DSS

—
—

—
—

1.0
10

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) I

GSS

— — ±100 nAdc

ON CHARACTERISTICS

(1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

V

GS(th)

1.0 1.7 2.4 Vdc

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 300 mAdc)
(VGS = 4.5 Vdc, ID = 100 mAdc)

r

DS(on)

—
—

0.75

1.0

1.0

1.4

Ohms

Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) g

FS

— 450 — mMhos

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 5.0 V) C

iss

— 45 — pF

Output Capacitance (VDS = 5.0 V) C

oss

— 25 —

Transfer Capacitance (VDG = 5.0 V) C

rss

— 5.0 —

SWITCHING CHARACTERISTICS

(2)

Turn–On Delay Time

t

d(on)

— 2.5 —

Rise Time

DD

= 15 Vdc, ID = 300 mAdc,

t

r

— 2.5 —

Turn–Off Delay Time

(VDD = 15 Vdc, ID = 300 mAdc,

RL = 50 Ω)

t

d(off)

— 15 —

Fall Time t

f

— 0.8 —

Gate Charge (See Figure 5) Q

T

— 1400 — pC

SOURCE–DRAIN DIODE CHARACTERISTICS

Continuous Current I

S

— — 0.3 A

Pulsed Current I

SM

— — 0.75

Forward Voltage

(2)

V

SD

— 0.85 — V

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.

(V

ns