MOTOROLA MMBD914LT3 Datasheet

1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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MAXIMUM RATINGS

Rating Symbol Value Unit

Reverse Voltage V

R

100 Vdc

Forward Current I

F

200 mAdc

Peak Forward Surge Current I

FM(surge)

500 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR–5 Board

(1)

TA = 25°C
Derate above 25°C

P

D

225

1.8

mW

mW/°C

Thermal Resistance, Junction to Ambient

R

q

JA

556 °C/W

Total Device Dissipation

Alumina Substrate,

(2)

TA = 25°C

Derate above 25°C

P

D

300

2.4

mW

mW/°C

Thermal Resistance, Junction to Ambient

R

q

JA

417 °C/W

Junction and Storage Temperature TJ, T

stg

–55 to +150 °C

DEVICE MARKING

MMBD914LT1 = 5D

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage

(IR = 100 mAdc)

V

(BR)

100 — Vdc

Reverse Voltage Leakage Current

(VR = 20 Vdc)
(VR = 75 Vdc)

I

R

—
—

25

5.0

nAdc

m

Adc

Diode Capacitance

(VR = 0, f = 1.0 MHz)

C

T

— 4.0 pF

Forward Voltage

(IF = 10 mAdc)

V

F

— 1.0 Vdc

Reverse Recovery Time

(IF = IR = 10 mAdc) (Figure 1)

t

rr

— 4.0 ns

1. FR–5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

Preferred devices are Motorola recommended choices for future use and best overall value.

Thermal Clad is a trademark of the Bergquist Company

Order this document

by MMBD914LT1/D

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SEMICONDUCTOR TECHNICAL DATA

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Motorola Preferred Device

1

2

3

CASE 318–08, STYLE 8

SOT–23 (TO–236AB)

 Motorola, Inc. 1997

1

ANODE

3

CATHODE

MMBD914LT1

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so I

R(peak)

is equal to 10 mA.

Notes: 3. tp » t

rr

+10 V

2.0 k

820

Ω

0.1 µF

DUT

V

R

100

µ

H

0.1

µ

F

50 Ω OUTPUT

PULSE

GENERATOR

50

Ω

INPUT

SAMPLING

OSCILLOSCOPE

t

r

t

p

t

10%

90%

I

F

I

R

t

rr

t

i

R(REC)

= 1.0 mA

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at i

R(REC)

= 1.0 mA)

I

F

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

Figure 2. Forward Voltage

VF, FORWARD VOLTAGE (VOLTS)

1.0

10

100

0.1

Figure 3. Leakage Current

VR, REVERSE VOLTAGE (VOLTS)

10

0

I

1.0

0.1

0.001

0.01

10 20 30 40 50

I

1.0 1.20.2 0.4 0.6 0.8

Figure 4. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

0

C

0.68

0.64

0.60

0.52

0.56

2.0 4.0 6.0 8.0

, FORWARD CURRENT (mA)

F

TA = 85°C

TA = –40°C

TA = 25°C

, REVERSE CURRENT ( A)

R

m

, DIODE CAPACITANCE (pF)

D

TA = 25°C

TA = 55°C

TA = 85°C

TA = 150°C

TA = 125°C