Motorola MJE521 Datasheet
1
Motorola Bipolar Power Transistor Device Data
. . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry
circuitry.
• DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc
• Complementary to PNP MJE371
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V
CEO
40
Vdc
Collector–Base Voltage
V
CB
40
Vdc
Emitter–Base Voltage
V
EB
4.0
Vdc
Collector Current — Continuous
— Peak
I
C
4.0
8.0
Adc
Base Current — Continuous
I
B
2.0
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
P
D
40
0.32
Watts
W/_C
Operating and Storage Junction Temperature Range
TJ, T
stg
–65 to +150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θ
JC
3.12
_
C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 100 mAdc, IB = 0)
V
CEO(sus)
40
—
Vdc
Collector–Base Cutoff Current
(VCB = 30 Vdc, IE = 0)
I
CBO
—
100
µAdc
Emitter–Base Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
I
EBO
—
100
µAdc
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
h
FE
40
—
—
(1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE521/D
Motorola, Inc. 1995
4 AMPERE
POWER TRANSISTOR
NPN SILICON
40 VOLTS
40 WATTS
CASE 77–08
TO–225AA TYPE
REV 1
MJE521
2
Motorola Bipolar Power Transistor Device Data
10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.5
30
0.1
0.3
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
Figure 1. Active–Region Safe Operating Area
5.0 ms
dc
5.0
20105.02.0
TJ = 150°C
I
C
, COLLECTOR CURRENT (AMP)
1.0
2.0
3.0
0.2
403.0
1.0 ms
The data of Figure 1 based on T
J(pk)
= 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are v alid for duty cycles to 10% provided (T
Jpk
)
v
150_C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
IC, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN
700
1000
3.0 5.0 20 20002.0
100
70
50
10
10 50 10030
25°C
TJ = 150°C
–55°C
Figure 2. DC Current Gain Figure 3. “On” Voltage
1.5
IC, COLLECTOR CURRENT (mA)
1.2
0.3
0
TJ = 25°C
VOLTAGE (VOLTS)
V
BE(sat)
@ IC/IB = 10
VBE @ VCE = 2.0 V
500
30
20
0.9
0.6
t, TIME (ms)
0.01
0.01 0.03 1.0 2.0 5.0 10 20 50 100 2000.1 0.50.2
1.0
0.2
0.1
0.05
r(t), TRANSIENT THERMAL
θ
JC
(t) = r(t)
θ
JC
θ
JC
= 5.0
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
– TC = P
(pk)
θ
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t1/t
2
0.2
SINGLE PULSE
RESISTANCE (NORMALIZED)
Figure 4. Thermal Response
0.5
D = 0.5
0.05
0.3
0.7
0.07
0.03
0.02
300
200
200 500 1000300
VCE = 1.0 V
V
CE(sat)
@ IC/IB = 10
3.0 5.0 20 20002.0 10 50 10030 200 500 1000300
0.02 0.05 0.3 3.0 30 500 1000300
0.1
0.01
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