MOTOROLA MJE371 Datasheet

1

Motorola Bipolar Power Transistor Device Data

  
 

. . . designed for use in general–purpose amplifier and switching circuits. Recom­mended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry
circuitry.

• DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc

• MJE371 is Complementary to NPN MJE521

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V

CEO

40

Vdc

Collector–Base Voltage

V

CB

40

Vdc

Emitter–Base Voltage

V

EB

4.0

Vdc

Collector Current — Continuous

— Peak

I

C

4.0

8.0

Adc

Base Current — Continuous

I

B

2.0

Adc

Total Power Dissipation @ TC = 25_C

Derate above 25_C

P

D

40

320

Watts

mW/_C

Operating and Storage Junction Temperature Range

TJ, T

stg

–65 to +150

_

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

θ

JC

3.12

_

C/W

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(IC = 100 mAdc, IB = 0)

V

CEO(sus)

40

—

Vdc

Collector–Base Cutoff Current

(VCB = 40 Vdc, IE = 0)

I

CBO

—

100

µAdc

Emitter–Base Cutoff Current

(VEB = 4.0 Vdc, IC = 0)

I

EBO

—

100

µAdc

ON CHARACTERISTICS

DC Current Gain (1)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

h

FE

40

—

—

(1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE371/D

 Motorola, Inc. 1995



4 AMPERE

POWER TRANSISTOR

PNP SILICON

40 VOLTS

40 WATTS

CASE 77–08

TO–225AA TYPE

REV 2

MJE371

2

Motorola Bipolar Power Transistor Device Data

10

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.5

40

0.1

0.3

BONDING WIRE LIMIT
SECOND BREAKDOWN LIMIT
THERMAL LIMIT @ TC = 25°C

Figure 1. Active–Region Safe Operating Area

5.0

20106.02.0

TJ = 150°C

I

C

, COLLECTOR CURRENT (AMP)

1.0

2.0

3.0

0.2

604.0 8.0

1.0 ms

dc

100µs

5.0 ms

There are two limitations on the power handling ability of a
transistor: average junction temperature and second break­down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa­tion than the curves indicate.

The data of Figure 1 is based on T

J(pk)

= 150_C; TC is vari­able depending on conditions. Second breakdown pulse lim­its are valid for duty cycles to 10% provided T

J(pk)

v 150_C.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less then the limitations
imposed by second breakdown.

IC, COLLECTOR CURRENT (AMP)

h

FE

, DC CURRENT GAIN, NORMALIZED

7.0

10

0.02 0.03 0.1 4.00.01

1.0

0.7

0.5

0.1

0.05 0.3 0.50.2

150°C

TJ = 25°C

–55°C

Figure 2. DC Current Gain Figure 3. “On” Voltage

2.0

IC, COLLECTOR CURRENT (AMP)

1.6

0.4

0

TJ = 25°C

VOLTAGE (VOLTS)

V

BE(sat)

@ IC/IB = 10

V

BE(on)

@ VCE = 1.0 V

5.0

0.3

0.2

1.2

0.8

t, TIME OR PULSE WIDTH (ms)

0.01

0.01 0.03 1.0 2.0 5.0 10 20 50 100 2000.1 0.50.2

1.0

0.2

0.1

0.05

r(t), EFFECTIVE TRANSIENT

θ

JC

(t) = r(t)

θ

JC

θ

JC

= 3.12

°

C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t

1

T

J(pk)

– TC = P

(pk)

θ

JC

(t)

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

SINGLE PULSE

THERMAL RESISTANCE (NORMALIZED)

Figure 4. Thermal Response

0.5

D = 0.5

0.1

0.01

0.3

0.7

0.07

0.03

0.02

3.0

2.0

1.0 3.02.0

VCE = 1.0 Vdc

V

CE(sat)

@ IC/IB = 10

0.01 0.02 0.05 4.00.005 0.03 0.2 0.30.1 0.5 2.0 3.01.0

0.02 0.05 0.3 3.0 500 1000

0.02

0.05

0.2