Motorola MJE350 Datasheet

1

Motorola Bipolar Power Transistor Device Data

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 

. . . designed for use in line–operated applications such as low power, line–operated
series pass and switching regulators requiring PNP capability.

• High Collector–Emitter Sustaining Voltage —
V

CEO(sus)

= 300 Vdc @ IC = 1.0 mAdc

• Excellent DC Current Gain —
hFE = 30–240 @ IC = 50 mAdc

• Plastic Thermopad Package

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V

CEO

300

Vdc

Emitter–Base Voltage

V

EB

3.0

Vdc

Collector Current — Continuous

I

C

500

mAdc

Total Power Dissipation @ TC = 25_C

Derate above 25_C

P

D

20

0.16

Watts
W/_C

Operating and Storage Junction Temperature Range

TJ, T

stg

–65 to +150

_

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

θ

JC

6.25

_

C/W

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(IC = 1.0 mAdc, IB = 0)

V

CEO(sus)

300

—

Vdc

Collector Cutoff Current

(VCB = 300 Vdc, IE = 0)

I

CBO

—

100

µAdc

Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0)

I

EBO

—

100

µAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 50 mAdc, VCE = 10 Vdc)

h

FE

30

240

—



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE350/D

 Motorola, Inc. 1995



0.5 AMPERE

POWER TRANSISTOR

PNP SILICON

300 VOLTS

20 WATTS

CASE 77–08

TO–225AA TYPE

REV 7

MJE350

2

Motorola Bipolar Power Transistor Device Data

V

, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

IC, COLLECTOR CURRENT (mA)

h

FE

, DC CURRENT GAIN

200

7.0 205.0

50

30

10

10 50 10030

25°C

TJ = 150°C

–55°C

Figure 1. DC Current Gain

100

20

70

200 50030070

VCE = 2.0 V
VCC = 10 V

Figure 2. “On” Voltages

1.0

IC, COLLECTOR CURRENT (mA)

0.8

0.2

0

TJ = 25°C

V, VOLTAGE (VOLTS)

V

BE(sat)

@ IC/IB = 10

VBE @ VCE = 10 V0.6

0.4

V

CE(sat)

7.0 205.0 10 50 10030 200 50030070

IC/IB = 10

IC/IB = 5.0

1000

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

70

300

10

50

BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25

°

C

SECOND BREAKDOWN LIMITED

Figure 3. Active–Region Safe Operating Area

1.0 ms

dc

700

2001005020

TJ = 150°C

I

C

, COLLECTOR CURRENT (mA)

100

300

500

30

100µs

40030 70

200

20

500µs

+1.2

IC, COLLECTOR CURRENT (mA)

70

Figure 4. Temperature Coefficients

5030105.0 5007.0 20

+0.8
+0.4

0
–0.4
–0.8
–1.2
–1.6
–2.0
–2.4
–2.8

100 200 300

*APPLIES FOR IC/IB < h

FE/4

*

θ

VC

for V

CE(sat)

θ

VB

for V

BE

+100°C to +150°C

+25°C to +100°C

–55°C to +25°C

+25°C to +150°C

–55°C to +25°C

There are two limitations on the power handling ability of a
transistor: average junction temperature and second break­down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa­tion than the curves indicate.

The data of Figure 3 is based on T

J(pk)

= 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 1 0% provided T

J(pk)

v

150_C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.

20

TC, CASE TEMPERATURE (

°

C)

Figure 5. Power Derating

10080400 16020 60

16

12

8.0

4.0

0

120 140

P

D

, POWER DISSIPATION (WATTS)