Motorola MJ13333 Datasheet
1
Motorola Bipolar Power Transistor Device Data
The MJ13333 transistor is designed for high voltage, high–speed, power switching
in inductive circuits where fall time is critical. It is particularly suited for line operated
switchmode applications such as:
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
Fast Turn Off Times
200 ns Inductive Fall Time — 25_C (Typ)
1.8 µs Inductive Storage Time — 25_C (Typ)
Operating Temperature Range –65 to +200_C
100_C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V
CEO
400
Vdc
Collector–Emitter voltage
V
CEV
700
Vdc
Emitter Base Voltage
V
EB
6.0
Vdc
Collector Current — Continuous
Peak (1)
I
C
I
CM
20
30
Adc
Base Current — Continuous
Peak (1)
I
B
I
BM
10
15
Adc
Total Power Dissipation @ TC = 25_C
@ TC = 100_C
Derate above 25_C
P
D
175
100
1.0
Watts
W/_C
Operating and Storage Junction Temperature Range
TJ, T
stg
–65 to +200
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.0
_
C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds
T
L
275
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v10%.
(1) Similar device types available with lower V
CEO
ratings, see the MJ13330 (200 V) and MJ13331 (250 V).
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ13333/D
Motorola, Inc. 1995
20 AMPERE
NPN SILICON
POWER TRANSISTORS
400–500 VOLTS
175 WATTS
CASE 1–07
TO–204AA
(TO–3)
REV 1
MJ13333
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (Table 1)
(IC = 100 mA, IB = 0)
V
CEO(sus)
400
—
—
Vdc
Collector Cutoff Current
(V
CEV
= Rated Value, V
BE(off)
= 1.5 Vdc)
(V
CEV
= Rated Value, V
BE(off)
= 1.5 Vdc, TC = 150_C)
I
CEV
—
—
—
—
0.25
5.0
mAdc
Collector Cutoff Current
(VCE = Rated V
CEV
, RBE = 50 Ω, TC = 100_C)
I
CER
—
—
5.0
mAdc
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
I
EBO
—
—
1.0
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
I
S/b
See Figure 12
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 13
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 5.0 Adc, VCE = 5.0 Vdc)
h
FE
10
—
60
—
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 2.0 Adc)
(IC = 20 Adc, IB = 6.7 Adc)
(IC = 10 Adc, IB = 2.0 Adc, TC = 100_C)
V
CE(sat)
—
—
—
—
—
—
1.8
5.0
2.4
Vdc
Base Emitter Saturation Voltage
(IC = 10 Adc, IB = 2.0 Adc)
(IC = 10 Adc, IB = 2.0 Adc, TC = 100_C)
V
BE(sat)
—
—
—
—
1.8
1.8
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f
test
= 1.0 kHz)
C
ob
125
—
500
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
t
d
—
0.02
0.1
µs
Rise Time
t
r
—
0.3
0.7
µs
Storage Time
IB1 = 2.0 A, V
BE(off)
= 5.0 Vdc, tp = 10 µs,
Duty Cycle 2.0%)
t
s
—
1.6
4.0
µs
Fall Time
2.0%)
t
f
—
0.3
0.7
µs
Inductive Load, Clamped (Table 1)
Storage Time
C
= 10 A(pk), V
clamp
= 250 Vdc, IB1 = 2.0 A,
t
sv
—
2.5
5.0
µs
Crossover Time
(IC = 10 A(pk), V
clamp
= 250 Vdc, IB1 = 2.0 A,
V
BE(off)
= 5 Vdc, TC = 100°C)
t
c
—
0.8
2.0
µs
Storage Time
t
sv
—
1.8
—
µs
Crossover Time
(IC = 10 A(pk), V
clamp
= 250 Vdc, IB1 = 2.0 A,
V
= 5 Vdc, T
= 25_C)
t
c
—
0.4
—
µs
Fall Time
V
BE(off)
= 5 Vdc, TC = 25_C)
t
fi
—
0.2
—
µs
(1) Pulse Test: PW = 300 µs, Duty Cycle 2%.
(I
(VCC = 250 Vdc, IC = 10 A,
MJ13333
3
Motorola Bipolar Power Transistor Device Data
, COLLECTOR CURRENT ( A)
µ
I
C
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.20.2
IC, COLLECTOR CURRENT (AMP)
1.2
0
0.8
IC, COLLECTOR CURRENT (AMP)
0.4
100
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
5.0
0.2 0.5 1.0 2.0 20
50
20
Figure 2. Collector Saturation Region
0.01
IB, BASE CURRENT (AMP)
0
1.6
0.8
0.4
h
FE
, DC CURRENT GAIN
10
TJ = 150°C
Figure 3. Collector–Emitter Saturation Region
1.0 5.00.5
Figure 4. Base–Emitter Voltage
Figure 5. Collector Cutoff Region
2.0
1.2
–0.4
Figure 6. Capacitance
VBE, BASE–EMITTER VOLTAGE (VOLTS)
10
–1
–0.2 0 + 0.2 +0.4 +0.6
3000
0.1
VR, REVERSE VOLTAGE (VOLTS)
30
10
1000
10
0
100 1000
100
FORWARD
VCE = 250 V
10 A1 A
REVERSE
10
1
10
2
10
3
10
4
C
ib
VCE = 5 V
25°C
5.0 10 0.02 0.5 1.0 2.0 105.00.1 0.20.05
5000.5 1.0 5.0 50
50
200
700
2000
1.6
IC/IB = 5
2.0
20
2.0
1.2
0
0.8
0.4
1.6
150°C
10 1.0 5.00.5 2.0 2010
500
5 A
150°C
25°C
V
BE(sat)
, BASE–EMITTER SATURATION VOLTAGE (VOLTS)
2.0
IC/IB = 5
25°C
150°C
125°C
100°C
75°C
25°C
C, CAPACITANCE (pF)
C
ob
Loading...