MOTOROLA MJ10023 Datasheet
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SEMICONDUCTOR TECHNICAL DATA
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The MJ10023 Darlington transistor is designed for high–voltage, high–speed,
power switching in inductive circuits where fall time is critical. It is particularly suited
for line–operated switchmode applications such as:
• AC and DC Motor Controls
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Fast Turn–Off Times
150 ns Inductive Fall Time @ 25_C (Typ)
300 ns Inductive Storage Time @ 25_C (Typ)
• Operating Temperature Range – 65 to + 200_C
• 100_C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
≈
100≈15
Order this document
by MJ10023/D
40 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTOR
400 VOL TS
250 WATTS
CASE 197A–05
TO–204AE (TO–3)
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter Base Voltage
Collector Current — Continuous
— Peak (1)
Base Current — Continuous
ООООООООООООООООО
— Peak (1)
Total Power Dissipation @ TC = 25_C
ООООООООООООООООО
@ TC = 100_C
Derate above 25_C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
ОООООООООООООООООООООООООООООООО
ООООООООООООООООО
Thermal Resistance, Junction to Case
ООООООООООООООООО
Maximum Lead Temperature for Soldering
ООООООООООООООООО
Purposes: 1/8″ from Case for 5 Seconds
Characteristic
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Symbol
V
CEO
V
CEV
V
EB
I
C
I
CM
I
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
B
I
BM
P
D
TJ, T
stg
Symbol
R
θJC
T
L
Max
400
600
80
40
80
ОООООО
20
40
250
ОООООО
143
1.43
–65 to +200
ОООООО
ОООООО
ОООООО
Max
0.7
275
Unit
Vdc
Vdc
Vdc
Adc
Adc
ÎÎÎ
Watts
ÎÎÎ
W/_C
_
C
Unit
ÎÎÎ
_
C/W
ÎÎÎ
_
C
ÎÎÎ
Motorola, Inc. 1998
Motorola Bipolar Power Transistor Device Data
1
MJ10023
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V
t
yy )
)
V
BE(off)
T
C
100 C)
)
V
BE(off)
T
C
25 C)
ELECTRICAL CHARACTERISTICS (T
= 25_C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (Table 1)
(IC = 100 mA, IB = 0)
ОООООООООООООООООО
Collector Cutoff Current
(V
= Rated Value, V
CEV
ОООООООООООООООООО
(V
= Rated Value, V
CEV
= 1.5 Vdc)
BE(off)
= 1.5 Vdc, TC = 150_C)
BE(off)
Collector Cutoff Current
ОООООООООООООООООО
(VCE = Rated V
, RBE = 50 Ω, TC = 100_C)
CEV
Emitter Cutoff Current
(VEB = 2.0 V, IC = O)
ОООООООООООООООООО
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
ON CHARACTERISTICS (1)
DC Current Gain
ОООООООООООООООООО
(IC = 10 Adc, VCE = 5.0 V)
Collector–Emitter Saturation Voltage
ОООООООООООООООООО
(IC = 20 Adc, IB = 1.0 Adc)
(IC = 40 Adc, IB = 5.0 Adc)
ОООООООООООООООООО
(IC = 20 Adc, IB = 10 Adc, TC = 100_C)
Base–Emitter Saturation Voltage
ОООООООООООООООООО
(IC = 20 Adc, IB = 1.2 Adc)
(IC = 20 Adc, IB = 1.2 Adc, TC = 100_C)
ОООООООООООООООООО
Diode Forward Voltage
(IF = 20 Adc)
DYNAMIC CHARACTERISTICS
Output Capacitance
ОООООООООООООООООО
(VCB = 10 Vdc, IE = 0, f
= 1.0 kHz)
test
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
(VCC = 250 Vdc, IC = 20 A, IB1 = 1.0 Adc,
= 5.0 V,
BE(off)
Duty Cycle v 2.0%)
= 50 µs,
p
Fall Time
Inductive Load, Clamped (Table 1)
Storage Time
Crossover Time
(ICM = 20 A, V
V
= 250 V, IB1 = 1.0 A,
CEM
= 5 V, T
= 5 V,
= 100_C
=
Fall Time
Storage Time
Crossover Time
(ICM = 20 A, V
V
= 250 V, IB1 = 1.0 A,
CEM
= 5 V, T
= 5 V,
= 25_C
=
Fall Time
(1) Pulse Test: PW = 300 µs, Duty Cycle v 2%.
Symbol
V
CEO(sus)
ÎÎÎ
I
CEV
ÎÎÎ
I
CER
ÎÎÎ
I
EBO
ÎÎÎ
I
S/b
RBSOA
h
FE
ÎÎÎ
V
CE(sat)
ÎÎÎ
ÎÎÎ
V
BE(sat)
ÎÎÎ
ÎÎÎ
V
f
C
ob
ÎÎÎ
t
d
t
r
t
s
t
f
t
sv
t
c
t
fi
t
sv
t
c
t
fi
Min
400
ÎÎ
—
ÎÎ
—
—
ÎÎ
—
ÎÎ
50
ÎÎ
ÎÎ
—
—
ÎÎ
—
ÎÎ
—
—
ÎÎ
—
150
ÎÎ
—
—
—
—
—
—
—
—
—
—
Typ
—
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—
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—
—
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—
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See Figure 13
See Figure 14
—
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—
—
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—
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—
—
ÎÎ
2.5
—
ÎÎ
0.03
0.4
0.9
0.3
1.9
0.6
0.3
1.0
0.3
0.15
Max
Unit
Vdc
ÎΗÎÎ
mAdc
0.25
ÎÎ
ÎÎ
ÎÎ
ÎÎ
5.0
5.0
175
600
ÎÎ
mAdc
ÎÎ
mAdc
ÎÎ
—
ÎÎ
Vdc
ÎÎ
ÎÎ
2.2
5.0
2.5
ÎÎ
ÎÎ
Vdc
ÎÎ
ÎÎ
ÎÎ
2.5
2.5
5.0
600
0.2
1.2
2.5
0.9
4.4
2.0
—
—
—
—
ÎÎ
ÎÎ
Vdc
pF
ÎÎ
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
2
Motorola Bipolar Power Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
MJ10023
300
200
TJ = 25°C
100
, DC CURRENT GAIN
FE
h
50
30
0.4 10
VCE = 5 V
1.0 2.0 5.0 40
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain
3.0
, COLLECTOR–EMITTER VOL TAGE (VOLTS)
CE
V
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
1.0 2.0 5.0 400.4 10 1.0
IC/IB = 10
VCE @ 25°C
VCE @ 100°C
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Collector–Emitter Saturation V oltage
TJ = 100°C
20
20
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
, COLLECTOR–EMITTER VOL TAGE (VOLTS)
0.5
CE
V
0.01
Figure 2. Collector Saturation Region
3.0
2.7
2.4
2.1
1.8
1.5
, BASE–EMITTER
1.2
0.9
BE(sat)
V
0.6
0.3
0.4
Figure 4. Base–Emitter Saturation V oltage
IC = 40 A
IC = 20 A
IC = 10 A
0.1 10
IB, BASE CURRENT (AMP)
IC/IB = 10
VBE @ 25°C
VBE @ 100°C
2.0 10 4020
IC, COLLECTOR CURRENT (AMPS)
5.0
TJ = 100°C
5.02.01.00.50.20.02 0.05
4
10
VCE = 250 V
3
µ
10
TJ = 125°C
2
10
10
, COLLECTOR CURRENT ( A)
10
C
I
–1
10
1
0
–0.2
100°C
75°C
25°C
0 +0.2 +0.8
VBE, BASE–EMITTER VOLTAGE (VOLTS)
+0.4
Figure 5. Collector Cutoff Region
Motorola Bipolar Power Transistor Device Data
+0.6
400
200
100
C, CAPACITANCE (pF)
50
40
4.5
20 100
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Cob, Output Capacitance
4002005010
3
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