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Motorola Bipolar Power Transistor Device Data
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The MJ10022 and MJ10023 Darlington transistors are designed for high–voltage,
high–speed, power switching in inductive circuits where fall time is critical. They are
particularly suited for line–operated switchmode applications such as:
• AC and DC Motor Controls
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Fast Turn–Off Times
150 ns Inductive Fall Time @ 25_C (Typ)
300 ns Inductive Storage Time @ 25_C (Typ)
• Operating Temperature Range – 65 to + 200_C
• 100_C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
Collector–Emitter Voltage
Collector–Emitter Voltage
Collector Current — Continuous
— Peak (1)
Base Current — Continuous
— Peak (1)
Total Power Dissipation @ TC = 25_C
@ TC = 100_C
Derate above 25_C
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ10022/D
40 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTORS
350 AND 400 VOLTS
250 WATTS
CASE 197A–05
TO–204AE (TO–3)
≈
100≈ 15
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Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Collector–Emitter Sustaining Voltage (Table 1) MJ10022
(IC = 100 mA, IB = 0) MJ10023
Collector Cutoff Current
(V
CEV
= Rated Value, V
BE(off)
= 1.5 Vdc)
(V
CEV
= Rated Value, V
BE(off)
= 1.5 Vdc, TC = 150_C)
Collector Cutoff Current
(VCE = Rated V
CEV
, RBE = 50 Ω, TC = 100_C)
Emitter Cutoff Current
(VEB = 2.0 V, IC = O)
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
DC Current Gain
(IC = 10 Adc, VCE = 5.0 V)
Collector–Emitter Saturation Voltage
(IC = 20 Adc, IB = 1.0 Adc)
(IC = 40 Adc, IB = 5.0 Adc)
(IC = 20 Adc, IB = 10 Adc, TC = 100_C)
Base–Emitter Saturation Voltage
(IC = 20 Adc, IB = 1.2 Adc)
(IC = 20 Adc, IB = 1.2 Adc, TC = 100_C)
Diode Forward Voltage
(IF = 20 Adc)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f
test
= 1.0 kHz)
SWITCHING CHARACTERISTICS
V
BE(off)
= 5.0 V, tp = 50 µs,
Duty Cycle v 2.0%)
Inductive Load, Clamped (Table 1)
(ICM = 20 A, V
CEM
= 250 V, IB1 = 1.0 A,
V
= 5 V, T
= 100_C)
V
BE(off)
= 5 V, TC = 100_C)
(ICM = 20 A, V
CEM
= 250 V, IB1 = 1.0 A,
V
= 5 V, T
= 25_C)
V
BE(off)
= 5 V, TC = 25_C)
µs
(1) Pulse Test: PW = 300 µs, Duty Cycle v 2%.
(VCC = 250 Vdc, IC = 20 A, IB1 = 1.0 Adc,
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Motorola Bipolar Power Transistor Device Data
, COLLECTOR CURRENT ( A)
µ
I
C
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0 2.0 5.0 400.4 10 1.0
300
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
1.0 2.0 5.0 40
200
50
0.4
Figure 2. Collector Saturation Region
IC, COLLECTOR CURRENT (AMPS)
5.0
2.1
1.8
0.9
0.6
Figure 3. Collector–Emitter Saturation Voltage
IC, COLLECTOR CURRENT (AMPS)
5.0
0.01
Figure 4. Base–Emitter Saturation Voltage
IB, BASE CURRENT (AMP)
0.1 10
4.5
0.5
h
FE
, DC CURRENT GAIN
VCE = 5 V
0.3
IC = 10 A
V
BE(sat)
, BASE–EMITTER
4.5
VR, REVERSE VOLTAGE (VOLTS)
20 100
400
–0.2
Figure 5. Collector Cutoff Region
VBE, BASE–EMITTER VOLTAGE (VOLTS)
10
2
10
1
10
–1
Figure 6. Cob, Output Capacitance
10
4
40
10
3
10
0
0 +0.2 +0.8
VCE = 250 V
TJ = 125°C
100°C
75°C
25°C
C, CAPACITANCE (pF)
100
30
0.4 10
2.0 10 4020
+0.6
200
100
50
4002005010
IC/IB = 10
TJ = 100°C
TJ = 25°C
5.02.01.00.50.20.02 0.05
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1.2
1.5
2.4
2.7
3.0
2.1
1.8
0.9
0.6
0.3
1.2
1.5
2.4
2.7
3.0
TJ = 100°C
IC = 20 A
VCE @ 100°C
VCE @ 25°C
VBE @ 100°C
VBE @ 25°C
20
IC = 40 A
20
IC/IB = 10
+0.4
TYPICAL ELECTRICAL CHARACTERISTICS