Motorola MJ10022 Datasheet

1

Motorola Bipolar Power Transistor Device Data

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The MJ10022 and MJ10023 Darlington transistors are designed for high–voltage,
high–speed, power switching in inductive circuits where fall time is critical. They are
particularly suited for line–operated switchmode applications such as:

• AC and DC Motor Controls

• Switching Regulators

• Inverters

• Solenoid and Relay Drivers

• Fast Turn–Off Times

150 ns Inductive Fall Time @ 25_C (Typ)
300 ns Inductive Storage Time @ 25_C (Typ)

• Operating Temperature Range – 65 to + 200_C

• 100_C Performance Specified for:

Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents

MAXIMUM RATINGS

Rating

Symbol

MJ10022

MJ10023

Unit

Collector–Emitter Voltage

V

CEO

350

400

Vdc

Collector–Emitter Voltage

V

CEV

450

600

Vdc

Emitter Base Voltage

V

EB

80

Vdc

Collector Current — Continuous

— Peak (1)

I

C

I

CM

40
80

Adc

Base Current — Continuous

— Peak (1)

I

B

I

BM

20
40

Adc

Total Power Dissipation @ TC = 25_C

@ TC = 100_C

Derate above 25_C

P

D

250
143

1.43

Watts

W/_C

Operating and Storage Junction Temperature Range

TJ, T

stg

–65 to +200

_

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

0.7

_

C/W

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

T

L

275

_

C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJ10022/D

 Motorola, Inc. 1995

40 AMPERE

NPN SILICON

POWER DARLINGTON

TRANSISTORS

350 AND 400 VOLTS

250 WATTS




CASE 197A–05

TO–204AE (TO–3)

≈

100≈ 15

 

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (Table 1) MJ10022

(IC = 100 mA, IB = 0) MJ10023

V

CEO(sus)

350
400

—
—

—
—

Vdc

Collector Cutoff Current

(V

CEV

= Rated Value, V

BE(off)

= 1.5 Vdc)

(V

CEV

= Rated Value, V

BE(off)

= 1.5 Vdc, TC = 150_C)

I

CEV

—
—

—
—

0.25

5.0

mAdc

Collector Cutoff Current

(VCE = Rated V

CEV

, RBE = 50 Ω, TC = 100_C)

I

CER

—

—

5.0

mAdc

Emitter Cutoff Current

(VEB = 2.0 V, IC = O)

I

EBO

—

—

175

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

I

S/b

See Figure 13

Clamped Inductive SOA with Base Reverse Biased

RBSOA

See Figure 14

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 10 Adc, VCE = 5.0 V)

h

FE

50

—

600

—

Collector–Emitter Saturation Voltage

(IC = 20 Adc, IB = 1.0 Adc)
(IC = 40 Adc, IB = 5.0 Adc)
(IC = 20 Adc, IB = 10 Adc, TC = 100_C)

V

CE(sat)

—
—
—

—
—
—

2.2

5.0

2.5

Vdc

Base–Emitter Saturation Voltage

(IC = 20 Adc, IB = 1.2 Adc)
(IC = 20 Adc, IB = 1.2 Adc, TC = 100_C)

V

BE(sat)

—
—

—
—

2.5

2.5

Vdc

Diode Forward Voltage

(IF = 20 Adc)

V

f

—

2.5

5.0

Vdc

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 10 Vdc, IE = 0, f

test

= 1.0 kHz)

C

ob

150

—

600

pF

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

t

d

—

0.03

0.2

µs

Rise Time

t

r

—

0.4

1.2

µs

Storage Time

V

BE(off)

= 5.0 V, tp = 50 µs,

Duty Cycle v 2.0%)

t

s

—

0.9

2.5

µs

Fall Time

v

2.0%)

t

f

—

0.3

0.9

µs

Inductive Load, Clamped (Table 1)

Storage Time

t

sv

—

1.9

4.4

µs

Crossover Time

(ICM = 20 A, V

CEM

= 250 V, IB1 = 1.0 A,

V

= 5 V, T

= 100_C)

t

c

—

0.6

2.0

µs

Fall Time

V

BE(off)

= 5 V, TC = 100_C)

t

fi

—

0.3

—

µs

Storage Time

t

sv

—

1.0

—

µs

Crossover Time

(ICM = 20 A, V

CEM

= 250 V, IB1 = 1.0 A,

V

= 5 V, T

= 25_C)

t

c

—

0.3

—

µs

Fall Time

V

BE(off)

= 5 V, TC = 25_C)

t

fi

—

0.15

—

µs

(1) Pulse Test: PW = 300 µs, Duty Cycle v 2%.

(VCC = 250 Vdc, IC = 20 A, IB1 = 1.0 Adc,

 

3

Motorola Bipolar Power Transistor Device Data

, COLLECTOR CURRENT ( A)

µ

I

C

V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0 2.0 5.0 400.4 10 1.0

300

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

1.0 2.0 5.0 40

200

50

0.4

Figure 2. Collector Saturation Region

IC, COLLECTOR CURRENT (AMPS)

5.0

2.1

1.8

0.9

0.6

Figure 3. Collector–Emitter Saturation Voltage

IC, COLLECTOR CURRENT (AMPS)

5.0

0.01

Figure 4. Base–Emitter Saturation Voltage

IB, BASE CURRENT (AMP)

0.1 10

4.5

0.5

h

FE

, DC CURRENT GAIN

VCE = 5 V

0.3

IC = 10 A

V

BE(sat)

, BASE–EMITTER

4.5
VR, REVERSE VOLTAGE (VOLTS)

20 100

400

–0.2

Figure 5. Collector Cutoff Region

VBE, BASE–EMITTER VOLTAGE (VOLTS)

10

2

10

1

10

–1

Figure 6. Cob, Output Capacitance

10

4

40

10

3

10

0

0 +0.2 +0.8

VCE = 250 V

TJ = 125°C

100°C
75°C

25°C

C, CAPACITANCE (pF)

100

30

0.4 10

2.0 10 4020

+0.6

200

100

50

4002005010

IC/IB = 10

TJ = 100°C

TJ = 25°C

5.02.01.00.50.20.02 0.05

4.0

3.5

3.0

2.5

2.0

1.5

1.0

1.2

1.5

2.4

2.7

3.0

2.1

1.8

0.9

0.6

0.3

1.2

1.5

2.4

2.7

3.0

TJ = 100°C

IC = 20 A

VCE @ 100°C

VCE @ 25°C

VBE @ 100°C

VBE @ 25°C

20

IC = 40 A

20

IC/IB = 10

+0.4

TYPICAL ELECTRICAL CHARACTERISTICS