Motorola MJ10016, MJ10015 Datasheet
1
Motorola Bipolar Power Transistor Device Data
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The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage,
high–speed, power switching in inductive circuits where fall time is critical. They are
particularly suited for line–operated switchmode applications such as:
• Switching Regulators
• Motor Controls
• Inverters
• Solenoid and Relay Drivers
• Fast Turn–Off Times
1.0 µs (max) Inductive Crossover Time — 20 Amps
2.5 µs (max) inductive Storage Time — 20 Amps
• Operating Temperature Range –65 to +200_C
• Performance Specified for
Reversed Biased SOA with Inductive Load
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Symbol
MJ10015
MJ10016
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Unit
Collector–Emitter Voltage
V
CEO
400
500
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Collector–Emitter Voltage
V
CEV
600
700
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Emitter Base Voltage
V
EB
8.0
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Collector Current — Continuous
— Peak (1)
I
C
I
CM
50
75
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Adc
Base Current — Continous
— Peak (1)
I
B
I
BM
10
15
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Adc
Total Power Dissipation @ TC = 25_C
@ TC = 100_C
Derate above 25_C
P
D
250
143
1.43
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Watts
W/_C
Operating and Storage Junction Temperature Range
TJ, T
stg
–65 to +200
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Unit
Thermal Resistance, Junction to Case
R
θJC
0.7
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
_
C/W
Maximum Lead Temperature for Soldering Purposes:
1/8″ from Case for 5 Seconds
T
L
275
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
SWITCHMODE is a trademark of Motorola, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ10015/D
Motorola, Inc. 1995
50 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTORS
400 AND 500 VOLTS
250 WATTS
CASE 197–05
TO–204AE TYPE
(TO–3 TYPE)
≈
50
≈
8
REV 1
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
OFF CHARACTERISTICS (1)
Collector–Emitter Sustaining Voltage (Table 1)
(IC = 100 mA, IB = 0, V
clamp
= Rated V
CEO
) MJ10015
MJ10016
V
CEO(sus)
400
500
—
—
—
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Collector Cutoff Current
(V
CEV
= Rated Value, V
BE(off)
= 1.5 Vdc)
I
CEV
—
—
0.25
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
Emitter Cutoff Current
(VEB = 2.0 Vdc, IC = 0)
I
EBO
—
—
350
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
I
S/b
See Figure 7
ÎÎÎ
ÎÎÎ
ÎÎÎ
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 8
ÎÎÎ
ÎÎÎ
ÎÎÎ
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 20 Adc, VCE = 5.0 Vdc)
(IC = 40 Adc, VCE = 5.0 Vdc)
h
FE
25
10
—
—
—
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
—
Collector–Emitter Saturation Voltage
(IC = 20 Adc, IB = 1.0 Adc)
(IC = 50 Adc, IB = 10 Adc)
V
CE(sat)
—
—
—
—
2.2
5.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Base–Emitter Saturation Voltage
(IC = 20 Adc, IB = 1.0 Adc)
V
BE(sat)
—
—
2.75
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Diode Forward Voltage (2)
(IF = 20 Adc)
V
f
—
2.5
5.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
DYNAMIC CHARACTERISTIC
Output Capacitance
(VCB = 10 Vdc, IE = 0, f
test
= 100 kHz)
C
ob
—
—
750
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
t
d
—
0.14
0.3
ÎÎÎ
ÎÎÎ
ÎÎÎ
µs
Rise Time
t
r
—
0.3
1.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
µs
Storage Time
IB1 = 1.0 Adc, V
BE(off)
= 5 Vdc, tp = 25 µs
Duty Cycle v 2%).
t
s
—
0.8
2.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
µs
Fall Time
v
2%).
t
f
—
0.3
1.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
µs
Inductive Load, Clamped (Table 1)
Storage Time
C
= 20 A(pk), V
clamp
= 250 V, IB1 = 1.0 A,
t
sv
—
1.0
2.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
µs
Crossover Time
(IC = 20 A(pk), V
clamp
= 250 V, IB1 = 1.0 A,
V
BE(off)
= 5.0 Vdc)
t
c
—
0.36
1.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
µs
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2%.
(2) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads.
(2) Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.
(VCC = 250 Vdc, IC = 20 A,
(I
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