MOTOROLA MJ10009 Datasheet
1
Motorola Bipolar Power Transistor Device Data
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The MJ10009 Darlington transistor is designed for high–voltage, high–speed,
power switching in Inductive circuits where fall time is critical. It is particularly suited
for line operated switchmode applications such as:
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
Fast Turn–Off Times
1.6 µs (max) Inductive Crossover Time – 10 A, 100_C
3.5 µs (max) Inductive Storage Time – 10 A, 100_C
Operating Temperature Range –65 to +200_C
100_C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V
CEO
500
Vdc
Collector–Emitter Voltage
VCEX
500
Vdc
Collector–Emitter Voltage
V
CEV
700
Vdc
Emitter Base Voltage
V
EB
8
Vdc
Collector Current — Continuous
— Peak (1)
I
C
I
CM
20
30
Adc
Base Current — Continuous
— Peak (1)
I
B
I
BM
2.5
5
Adc
Total Power Dissipation @ TC = 25_C
@ TC = 100_C
Derate above 25_C
P
D
175
100
1
Watts
W/_C
Operating and Storage Junction Temperature Range
TJ, T
stg
–65 to +200
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1
_
C/W
Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds
T
L
275
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ10009/D
Motorola, Inc. 1995
20 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTORS
450 and 500 VOLTS
175 WATTS
CASE 1–07
TO–204AA
(TO–3)
*Motorola Preferred Device
≈
100≈ 15
REV 2
MJ10009
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage (Table 1)
(IC = 100 mA, IB = 0, V
clamp
= Rated V
CEO
)
V
CEO(sus)
500
—
—
Vdc
Collector Emitter Sustaining Voltage (Table 1, Figure 12)
(IC = 2 A, V
clamp
= Rated V
CEX
, TC = 100_C, V
BE(off)
= 5 V)
(IC = 10 A, V
clamp
= Rated V
CEX
, TC = 100_C, V
BE(off)
= 5 V)
V
CEX(sus)
500
375
—
—
—
—
Vdc
Collector Cutoff Current
(V
CEV
= Rated Value, V
BE(off)
= 1.5 Vdc)
(V
CEV
= Rated Value, V
BE(off)
= 1.5 Vdc, TC = 150_C)
I
CEV
—
—
—
—
0.25
5
mAdc
Collector Cutoff Current
(VCE = Rated V
CEV
, RBE = 50 Ω, TC = 100_C)
I
CER
—
—
5
mAdc
Emitter Cutoff Current
(VEB = 2 Vdc, IC = 0)
I
EBO
—
—
175
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
I
S/b
See Figure 11
ON CHARACTERISTICS (2)
DC Current Gain
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 10 Adc, VCE = 5 Vdc)
h
FE
40
30
—
—
400
300
—
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 500 mAdc)
(IC = 20 Adc, IB = 2 Adc)
(IC = 10 Adc, IB = 500 mAdc, TC = 100_C)
V
CE(sat)
—
—
—
—
—
—
2
3.5
2.5
Vdc
Base–Emitter Saturation Voltage
(IC = 10 Adc, IB = 500 mAdc)
(IC = 10 Adc, IB = 500 mAdc, TC = 100_C)
V
BE(sat)
—
—
—
—
2.5
2.5
Vdc
Diode Forward Voltage (1)
(IF = 10 Adc)
V
f
—
3
5
Vdc
DYNAMIC CHARACTERISTICS
Small–Signal Current Gain
(IC = 1 Adc, VCE = 10 Vdc, f
test
= 1 MHz)
h
fe
8
—
—
—
Output Capacitance
(VCB = 10 Vdc, IE = 0, f
test
= 100 kHz)
C
ob
100
—
325
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
t
d
—
0.12
0.25
µs
Rise Time
t
r
—
0.5
1.5
µs
Storage Time
IB1 = 500 mA, V
BE(off)
= 5 Vdc, tp = 25 µs
Duty Cycle v 2%).
t
s
—
0.8
2.0
µs
Fall Time
v
2%).
t
f
—
0.2
0.6
µs
Inductive Load, Clamped (Table 1)
Storage Time
C
= 10 A(pk), V
clamp
= 250 V, IB1 = 500 mA,
t
sv
—
1.5
3.5
µs
Crossover Time
(IC = 10 A(pk), V
clamp
= 250 V, IB1 = 500 mA,
V
BE(off)
= 5 Vdc, TC = 100_C)
t
c
—
0.36
1.6
µs
Storage Time
C
= 10 A(pk), V
clamp
= 250 V, IB1 = 500 mA,
t
sv
—
0.8
—
µs
Crossover Time
(IC = 10 A(pk), V
clamp
= 250 V, IB1 = 500 mA,
V
BE(off)
= 5 Vdc)
t
c
—
0.18
—
µs
(1) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads.
(1) Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.
(2) Pulse Test: PW = 300 µs, Duty Cycle ≤ 2%.
(I
(I
(VCC = 250 Vdc, IC = 10 A,
MJ10009
3
Motorola Bipolar Power Transistor Device Data
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
20
0.2 1 2
200
100
60
Figure 2. Collector Saturation Region
3
0.03
IB, BASE CURRENT (AMP)
1
0.05 0.1 0.2 0.5 1 2 3
2.6
2.2
1.8
1.4
TJ = 25°C
400
h
FE
, DC CURRENT GAIN
TJ = 150°C
VCE = 5 V
40
0.5 5 10 20
25°C
IC = 5 A 10 A 20 A
V, VOLTAGE (VOLTS)
VBE, BASE–EMITTER VOLTAGE (VOLTS)
10
4
10
3
10
2
10
1
, COLLECTOR CURRENT ( A)I
C
10
0
0 +0.2–0.2
VCE = 250 V
TJ = 125°C
100°C
25°C
Figure 3. Collector–Emitter Saturation Voltage
2.4
0.2
IC, COLLECTOR CURRENT (AMP)
0.4
0.3 0.5 0.7 1 2 5 20
2
1.6
1.2
0.8
IC/IB = 10
TJ = – 55°C
73
Figure 4. Base-Emitter Voltage
2.8
IC, COLLECTOR CURRENT (AMP)
0.8
0.2 0.3 0.5 0.7
2.4
2
1.6
1.2
Figure 5. Collector Cutoff Region
0.4
Figure 6. Output Capacitance
VR, REVERSE VOLTAGE (VOLTS)
50
1 2 20 60100.6
200
70
TJ = 25°C
C
ob
1000
500
100
100 200 400
V, VOLTAGE (VOLTS)
10
25°C
150°C
2 5 2073 101
25°C
150°C
25°C
TJ = – 55°C
V
BE(sat)
@ IC/IB = 10
V
BE(on)
@ VCE = 3 V
75°C
µ
10
–1
+0.4 +0.8+0.6
4 6 40
700
300
C
ob
, OUTPUT CAPACITANCE (pF)
REVERSE
FORWARD
TYPICAL CHARACTERISTICS
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
V
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