Motorola MJ10007 Datasheet

Motorola Bipolar Power Transistor Device Data

  

 $%  "! "($ $!&"! $!%%&"$% (& % &&$ #'# "

The MJ10007 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as:

• Switching Regulators

• Inverters

• Solenoid and Relay Drivers

• Motor Controls

• Deflection Circuits

Fast Turn–Off Times

30 ns Inductive Fall Time — 25_C (Typ) 500 ns Inductive Storage Time — 25_C (Typ)

Operating Temperature Range –65 to +200_C 100_C Performance Specified for:

Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

CEO

400

Vdc

Collector–Emitter Voltage

CEX

450

Vdc

Collector–Emitter Voltage

CEV

500

Vdc

Emitter Base Voltage

8.0

Vdc

Collector Current — Continuous

— Peak (1)

10 20

Adc

Base Current — Continuous

— Peak (1)

2.5

5.0

Adc

Total Power Dissipation @ TC = 25_C

@ TC = 100_C

Derate above 25_C

150 100

0.86

Watts

W/_C

Operating and Storage Junction Temperature Range

TJ, T

stg

–65 to +200

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

θJC

1.17

C/W

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds

275

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%. Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJ10007/D

 Motorola, Inc. 1995

10 AMPERE

NPN SILICON

POWER DARLINGTON

TRANSISTORS

400 VOLTS

150 WATTS



*Motorola Preferred Device

CASE 1–07

TO–204AA

(TO–3)



≈

100≈ 15

REV 2

MJ10007

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (Table 1)

(IC = 250 mA, IB = 0, V

clamp

= Rated V

CEO

)

CEO(sus)

400

—

Vdc

Collector–Emitter Sustaining Voltage (Table 1, Figure 12)

(IC = 1 A, V

clamp

= Rated V

CEX

, TC = 100_C)

(IC = 5 A, V

clamp

= Rated V

CEX

, TC = 100_C)

CEX(sus)

450 325

— —

Vdc

Collector Cutoff Current

CEV

= Rated Value, V

BE(off)

= 1 5 Vdc)

CEV

= Rated Value, V

BE(off)

= 1.5 Vdc, TC = 150_C)

CEV

— —

0.25

5.0

mAdc

Collector Cutoff Current

(VCE = Rated V

CEV

, RBE = 50 Ω, TC = 100_C)

CER

—

5.0

mAdc

Emitter Cutoff Current

(VEB = 2 Vdc, IC = 0)

EBO

—

175

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased

S/b

See Figure 11

ON CHARACTERISTICS (2)

DC Current Gain

(IC = 2.5 Adc, VCE = 5.0 Vdc) (IC = 5.0 Adc, VCE = 5.0 Vdc)

40 30

— —

500 300

—

Collector Emitter Saturation Voltage

(IC = 5.0 Adc, IB = 250 mAdc) (IC = 10 Adc, IB = 1.0 Adc) (IC = 5.0 Adc, IB = 250 mAdc, TC = 100_C)

CE(sat)

— — —

1.9

2.9

2.0

Vdc

Base–Emitter Saturation Voltage

(IC = 5.0 Adc, IB = 250 mAdc) (IC = 5.0 Adc, IB = 250 mAdc, TC = 100_C)

BE(sat)

— —

2.5

Vdc

Diode Forward Voltage (1)

(IF = 5.0 Adc)

—

3.0

Vdc

DYNAMIC CHARACTERISTICS

Small Signal Current Gain

(IC = 1.0 Adc, VCE = 10 Vdc, f

test

= 1.0 MHz)

—

Output Capacitance

(VCB = 10 Vdc, IE = 0, f

test

= 100 kHz)

—

275

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

—

0.05

0.2

µs

Rise Time

—

0.25

0.6

µs

Storage Time

IB1 = 250 mA, V

BE(off)

= 5.0 Vdc, tp = 50 µs,

Duty Cycle v 2.0%)

—

0.5

1.5

µs

Fall Time

2.0%)

—

0.06

0.5

µs

Inductive Load Clamped (Table 1)

Storage Time

= 5.0 A(pk), V

clamp

= Rated V

CEX

, IB1 = 250 mA,

—

0.8

2.0

µs

Crossover Time

(IC = 5.0 A(pk), V

clamp

= Rated V

CEX

, IB1 = 250 mA,

BE(off)

= 5.0 Vdc, TC = 100_C)

—

0.6

1.5

µs

Storage Time

= 5.0 A(pk), V

clamp

= Rated V

CEX

, IB1 = 250 mA,

—

0.5

—

µs

Crossover Time

(IC = 5.0 A(pk), V

clamp

= Rated V

CEX

, IB1 = 250 mA,

BE(off)

= 5.0 Vdc, TC = 25_C)

—

0.3

—

µs

(1) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads.

(1) Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.

(2) Pulse Test: PW = 300 µs, Duty Cycle v 2%.

(VCC = 250 Vdc, IC = 5.0 A,

MJ10007

Motorola Bipolar Power Transistor Device Data

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.2 0.3 1 2 3

100

Figure 2. Collector Saturation Region

3.4

IB, BASE CURRENT (mA)

0.6 10 20 70 100 300 700 1 k

2.6

2.2

1.8

1.4

IC = 0.3 A

TJ = 25°C

10 A

VBE, BASE–EMITTER VOLTAGE (VOLTS)

, DC CURRENT GAIN

TJ = 150°C

VCE = 5 V

, COLLECTOR CURRENT ( A)I

0 +0.2–0.2

VCE = 250 V

TJ = 125°C

100°C

25°C

30 20

0.5 0.7 5 7

Figure 3. Collector-Emitter Saturation Voltage

2.4

0.1 IC, COLLECTOR CURRENT (AMP)

0.4

0.3 0.5 0.7 1 2 5

1.6

1.2

0.8

IC/IB = 10

TJ = – 55°C

Figure 4. Base-Emitter Voltage

2.8

IC, COLLECTOR CURRENT (AMP)

0.8

0.2 0.3 0.5 0.7

2.4

1.6

1.2

Figure 5. Collector Cutoff Region

0.1

Figure 6. Output Capacitance

VR, REVERSE VOLTAGE (VOLTS)

1 2 20100.2

100

TJ = 25°C

400

200

100 200 1000

25°C

–55°C

200

300

5 A2.5 A

30 50020050

VOLTAGE (VOLTS)

25°C

150°C

2 5 73 101

25°C

150°C

25°C

TJ = – 55°C

BE(sat)

@ IC/IB = 10

BE(on)

@ VCE = 5 V

75°C

–1

+0.4 +0.8+0.6

5 50

, OUTPUT CAPACITANCE (pF)

REVERSE

FORWARD

0.1

CE(sat)

, COLLECTOR–EMITTER SATURATION

0.2 0.1

5000.5

TYPICAL CHARACTERISTICS

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

, BASE–EMITTER VOLTAGE (VOLTS)

+ 5 hidden pages