1
MHW5222AMOTOROLA RF DEVICE DATA
The RF Line
. . . designed for broadband applications requiring low distortion characteristics.
Specifically intended for CATV market requirements. Features ion–implanted
arsenic emitter transistors with 7.0 GHz fT, and an all gold metallization system.
• Broadband Power Gain @ f = 40–450 MHz
Gp= 22 dB (Typ)
• Broadband Noise Figure @ f = 40–450 MHz
NF = 4.5 dB (Typ)
• Superior Gain, Return Loss and DC Current Stability with Temperature
• All Gold Metallization
• 7.0 GHz Ion–Implanted Transistors
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
RF Voltage Input (Single Tone) V
in
+70 dBmV
DC Supply Voltage V
CC
+28 Vdc
Operating Case Temperature Range T
C
–20 to +100 °C
Storage Temperature Range T
stg
–40 to +100 °C
ELECTRICAL CHARACTERISTICS (V
CC
= 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Frequency Range BW 40 — 450 MHz
Power Gain — 50 MHz G
p
21.4 22 22.6 dB
Power Gain — 450 MHz G
p
22.0 22.9 23.5 dB
Slope S 0.2 0.5 1.5 dB
Gain Flatness (Peak To Valley) — — 0.2 0.4 dB
Return Loss — Input/Output 40–450 MHz
(Zo = 75 Ohms)
IRL/ORL 18 — — dB
Second Order Intermodulation Distortion
(V
out
= +46 dBmV, Ch 2, M6, M15)
(V
out
= +44 dBmV, Ch 2, M13, M22)
IMD
—
—
–80
–78
—
–72
dB
Cross Modulation Distortion 53–Channel FLAT
(V
out
= +46 dBmV) 60–Channel FLAT
XMD
53
XMD
60
— –60
–60
—
–59
dB
Composite Triple Beat 53–Channel FLAT
(V
out
= +46 dBmV) 60–Channel FLAT
CTB
53
CTB
60
—
—
–63
–61
—
–60
dB
DIN (European Applications Only)
300 MHz — (CH V + Q – P @ W)
400 MHz — (CH M8 + M15 – M9 @ M14)
450 MHz — (CH M20 + M23 – M22 @ M21)
DIN1
DIN2
DIN3
—
—
—
125.5
125
124
—
—
—
dBµV
Noise Figure
(f = 450 MHz)
NF — 4.5 5.0 dB
DC Current I
DC
— 210 240 mA