Motorola MHW2821-1, MHW2821-2 Datasheet
SEMICONDUCTOR TECHNICAL DATA
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by MHW2821/D
The RF Line
Designed for 12.5 volt UHF power amplifier applications in industrial and
commercial FM equipment operating from 806 to 950 MHz.
• Specified 12.5 Volt Characteristics:
RF Input Power: ≤ 250 mW (MHW2821–1)
RF Input Power: ≤ 300 mW (MHW2821–2)
RF Output Power: 20 W (MHW2821–1)
RF Output Power: 18 W (MHW2821–2)
• LDMOS FET Technology
• Epoxy Glass Substrate Eliminates Possibility of Substrate Fracture
• 50 Ω Input/Output Impedance
• Guaranteed Stability and Ruggedness
• Cost Effective
MAXIMUM RATINGS
DC Supply Voltages V
RF Input Power P
RF Output Power P
Operating Case Temperature Range T
Storage Temperature Range T
(Flange Temperature = 25°C)
Rating
–1: 20 W, 806–870 MHz
–2: 18 W, 890–950 MHz
RF POWER AMPLIFIER
CASE 301AB–02, STYLE 1
Symbol Value Unit
bias
VS2, V
out
stg
,
S3
in
C
12.5
16
400 mW
23 W
– 30 to +100
– 30 to +100
Vdc
°C
°C
ELECTRICAL CHARACTERISTICS (V
Characteristic Symbol Min Max Unit
Frequency Range MHW2821–1
Input Power (P
Input Power (P
Power Gain (P
Power Gain (P
Efficiency (Rated P
Harmonics (Rated P
Input VSWR (Rated P
(1) Adjust Pin for specified P
= 20 W) (1) MHW2821–1
out
= 18 W) (1) MHW2821–2
out
= 20 W) (1) MHW2821–1
out
= 18 W) (1) MHW2821–2
out
) η 35 — %
out
Reference) (1) 2f
out
) (1) VSWR
out
. (continued)
out
= VS3 = 12.5 Vdc; V
S2
MHW2821–2
Motorola, Inc. 1996
= 12.5 Vdc; TC = +25°C, 50 Ω system, unless otherwise noted)
bias
BW 806
P
in
G
P
o
3f
o
in
890
—
—
19
17.9
—
—
— 3:1 dB
870
950
250
300
—
—
–40
–45
MHW2821–1 MHW2821–2MOTOROLA RF DEVICE DATA
MHz
mW
dB
dBc
1
ELECTRICAL CHARACTERISTICS (continued) (V
otherwise noted)
Characteristic
Load Mismatch Stress
(V
Load VSWR = 20:1, All Phase Angles at Frequency of Test) (1)
Stability (V
Pin = 0 to 300 mW for MHW2821–2; Load VSWR = 4:1,
All Phase Angles at Frequency of Test
Quiescent Current (With No RF Applied)
Leakage Current (With No RF Applied)
(VS2 = VS3 = 12.5 Vdc; V
Bias Pin Current
(Rated P
(1) Adjust Pin for specified P
= 16 Vdc; P
supply
= 10.8 to 16 Vdc; Pin = 0 to 250 mW for MHW2821–1;
supply
(VS2 = VS3 = 12.5 Vdc; V
) (1)
out
= 20 W for MHW2821–1; P
out
out
bias
bias
.
= 0 Vdc)
out
= 12.5 Vdc)
= VS3 = 12.5 Vdc, V
S2
= 18 W for MHW2821–2;
BLOCK DIAGRAM
= 12.5 Vdc, TC = +25°C, 50 Ω system, unless
bias
Symbol Min Max Unit
ψ No Degradation in
— All Spurious Outputs
I
sq
I
L
I
bias
Output Power
Before and After Test
More than 60 dB
Below Desired Signal
— 500 mA
— 0.6 mA
— 0.8 mA
OUTPUT
POWER
METER
SPECTRUM
ANALYZER
INPUT
POWER
METER
DIRECTIONAL COUPLER
10 dB
MINIMUM
ATTENUATION
REFLECTED
POWER
METER
20 dB DUAL
RF SIGNAL
GENERATOR
1
Z
RF IN
2345
TEST FIXTURE
C4
C1
1
V
bias
12.5 V
C7
C1, C2, C3 0.018 µF
C4, C5, C6 0.1 µF
C7, C8, C9 1.0 µF
Z1, Z2 50 Ω Microstrip
C5 C6
C8 C3
V
S2
12.5 V
C2
V
S3
12.5 V
C9
Z
2
RF OUT
DIRECTIONAL COUPLER
Figure 1. T est Circuit Diagram
20 dB DUAL
POWER
TERMINA TION
MHW2821–1 MHW2821–2
2
MOTOROLA RF DEVICE DATA
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