Motorola MHW2821-1, MHW2821-2 Datasheet


SEMICONDUCTOR TECHNICAL DATA
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by MHW2821/D
The RF Line
    
Designed for 12.5 volt UHF power amplifier applications in industrial and
commercial FM equipment operating from 806 to 950 MHz.
Specified 12.5 Volt Characteristics: RF Input Power: 250 mW (MHW2821–1)
RF Output Power: 20 W (MHW2821–1)
RF Output Power: 18 W (MHW2821–2)
LDMOS FET Technology
Epoxy Glass Substrate Eliminates Possibility of Substrate Fracture
50 Input/Output Impedance
Guaranteed Stability and Ruggedness
Cost Effective
MAXIMUM RATINGS
DC Supply Voltages V
RF Input Power P RF Output Power P Operating Case Temperature Range T
Storage Temperature Range T
(Flange Temperature = 25°C)
Rating
 
–1: 20 W, 806–870 MHz –2: 18 W, 890–950 MHz RF POWER AMPLIFIER
CASE 301AB–02, STYLE 1
Symbol Value Unit
bias
VS2, V
out
stg
, S3
in
C
12.5 16
400 mW
23 W
– 30 to +100 – 30 to +100
Vdc
°C °C
ELECTRICAL CHARACTERISTICS (V
Characteristic Symbol Min Max Unit
Frequency Range MHW2821–1
Input Power (P
Input Power (P
Power Gain (P
Power Gain (P
Efficiency (Rated P Harmonics (Rated P
Input VSWR (Rated P
(1) Adjust Pin for specified P
= 20 W) (1) MHW2821–1
out
= 18 W) (1) MHW2821–2
out
= 20 W) (1) MHW2821–1
out
= 18 W) (1) MHW2821–2
out
) η 35 %
out
Reference) (1) 2f
out
) (1) VSWR
out
. (continued)
out
= VS3 = 12.5 Vdc; V
S2
MHW2821–2
Motorola, Inc. 1996
= 12.5 Vdc; TC = +25°C, 50 system, unless otherwise noted)
bias
BW 806
P
in
G
P
o
3f
o
in
890
— —
19
17.9
— —
3:1 dB
870 950
250 300
— —
–40 –45
MHW2821–1 MHW2821–2MOTOROLA RF DEVICE DATA
MHz
mW
dB
dBc
1
ELECTRICAL CHARACTERISTICS (continued) (V
otherwise noted)
Characteristic
Load Mismatch Stress
(V Load VSWR = 20:1, All Phase Angles at Frequency of Test) (1)
Stability (V
Pin = 0 to 300 mW for MHW2821–2; Load VSWR = 4:1, All Phase Angles at Frequency of Test
Quiescent Current (With No RF Applied)
Leakage Current (With No RF Applied)
(VS2 = VS3 = 12.5 Vdc; V
Bias Pin Current
(Rated P
(1) Adjust Pin for specified P
= 16 Vdc; P
supply
= 10.8 to 16 Vdc; Pin = 0 to 250 mW for MHW2821–1;
supply
(VS2 = VS3 = 12.5 Vdc; V
) (1)
out
= 20 W for MHW2821–1; P
out
out
bias
bias
.
= 0 Vdc)
out
= 12.5 Vdc)
= VS3 = 12.5 Vdc, V
S2
= 18 W for MHW2821–2;
BLOCK DIAGRAM
= 12.5 Vdc, TC = +25°C, 50 system, unless
bias
Symbol Min Max Unit
ψ No Degradation in
All Spurious Outputs
I
sq
I
L
I
bias
Output Power
Before and After Test
More than 60 dB
Below Desired Signal
500 mA
0.6 mA
0.8 mA
OUTPUT
POWER
METER
SPECTRUM
ANALYZER
INPUT
POWER
METER
DIRECTIONAL COUPLER
10 dB
MINIMUM
ATTENUATION
REFLECTED
POWER
METER
20 dB DUAL
RF SIGNAL
GENERATOR
1
Z
RF IN
2345
TEST FIXTURE
C4
C1
1
V
bias
12.5 V
C7
C1, C2, C3 0.018 µF C4, C5, C6 0.1 µF C7, C8, C9 1.0 µF Z1, Z2 50 Microstrip
C5 C6
C8 C3
V
S2
12.5 V
C2
V
S3
12.5 V
C9
Z
2
RF OUT
DIRECTIONAL COUPLER
Figure 1. T est Circuit Diagram
20 dB DUAL
POWER
TERMINA TION
MHW2821–1 MHW2821–2 2
MOTOROLA RF DEVICE DATA
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