Motorola MHPM7B8A120A Datasheet

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SEMICONDUCTOR TECHNICAL DATA

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Integrated Power Stage for 1.0 hp Motor Drives

This module integrates a 3–phase input rectifier bridge, 3–phase output
inverter and brake transistor/diode in a single convenient package. The output
inverter utilizes advanced insulated gate bipolar transistors (IGBT) matched
with free–wheeling diodes to give optimal dynamic performance. It has been
configured for use as a three–phase motor drive module or for many other
power switching applications. The top connector pins have been designed for
easy interfacing to the user’s control board.

• Short Circuit Rated 10 µs @ 25°C

• Pin-to-Baseplate Isolation Exceeds 2500 V ac (rms)

• Convenient Package Outline

• UL

• Access to Positive and Negative DC Bus

Recognized and Designed to Meet VDE

Motorola Preferred Device

8.0 AMP, 1200 VOLT

HYBRID POWER MODULE

PLASTIC PACKAGE

CASE 440-01, Style 1

MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

INPUT RECTIFIER BRIDGE

Repetitive Peak Reverse Voltage V
Average Output Rectified Current (1) I
Peak Non-repetitive Surge Current I

OUTPUT INVERTER

IGBT Reverse Voltage V
Gate-Emitter Voltage V
Continuous IGBT Collector Current I
Peak IGBT Collector Current – (PW = 1.0 ms) (2) I
Continuous Free-Wheeling Diode Current I
Peak Free-Wheeling Diode Current – (PW = 1.0 ms) (2) I
IGBT Power Dissipation P
Free-Wheeling Diode Power Dissipation P
IGBT Junction Temperature Range T
Free-Wheeling Diode Junction Temperature Range T

(1) 1 cycle = 50 or 60 Hz
(2) 1 ms = 1.0% duty cycle

Preferred devices are Motorola recommended choices for future use and best overall value.

RRM

O

FSM

CES

GES

C

C(pk)

F

F(pk)

D
D

J
J

1200 V

8.0 A

200 A

1200 V

± 20 V

8.0 A
16 A

8.0 A
16 A
50 W
30 W

– 40 to +125 °C
– 40 to +125 °C

 Motorola, Inc. 1995

MOTOROLA

MHPM7B8A120A

1

MAXIMUM DEVICE RATINGS (continued) (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

BRAKE CIRCUIT

IGBT Reverse Voltage V
Gate-Emitter Voltage V
Continuous IGBT Collector Current I
Peak IGBT Collector Current (PW = 1.0 ms) (2) I
IGBT Power Dissipation PD 50 W
Diode Reverse Voltage V
Continuous Output Diode Current I
Peak Output Diode Current (PW = 1.0 ms) (2) I

TOTAL MODULE

Isolation Voltage – (47–63 Hz, 1.0 Minute Duration) V
Ambient Operating Temperature Range T
Operating Case Temperature Range T
Storage Temperature Range T
Mounting Torque – 6.0 lb–in

CES

GES

C

C(pk)

RRM

F

F(pk)

ISO

A
C

stg

1200 V

± 20 V

8.0 A
16 A

1200 V

8.0 A
16 A

2500 VAC
– 40 to + 85 °C
– 40 to + 90 °C

– 40 to +150 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

INPUT RECTIFIER BRIDGE

Reverse Leakage Current (V
Forward Voltage (IF = 8.0 A) V
Thermal Resistance (Each Die) R

OUTPUT INVERTER

Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) I
Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V)

Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) V
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) V
Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 8.0 A) V
Input Capacitance (VGE = 0 V, VCE = 25 V, f = 1.0 MHz) Cies – 1000 – pF
Input Gate Charge (VCE = 600 V, IC = 8.0 A, VGE = 15 V) Q
Fall Time – Inductive Load

(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω)

Turn-On Energy

(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω)

Turn-Off Energy

(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω)
Diode Forward Voltage (IF = 8.0 A, VGE = 0 V) V
Diode Reverse Recovery Time

(IF = 8.0 A, V = 600 V, dI/dt = 50 A/µs)
Diode Stored Charge (IF = 8.0 A, V = 600 V, di/dt = 50 A/µs) Q
Thermal Resistance – IGBT (Each Die) R
Thermal Resistance – Free-Wheeling Diode (Each Die) R

(2) 1.0 ms = 1.0% duty cycle

= 1200 V) I

RRM

TJ = 25°C
TJ = 125°C

R

F

θJC

GES

I

CES

GE(th)

(BR)CES

CE(SAT)

T

t

fi

E

(on)

E

(off)

F

t

rr

rr

θJC
θJC

– 10 50 µA
– 1.05 1.5 V
– – 2.9 °C/W

– – ± 20 µA

–
–

4.0 6.0 8.0 V

1200 1300 – V

– 2.5 3.5 V

– 75 – nC

– 350 500 ns
– – 1.0 mJ

– – 1.0 mJ

– 1.6 2.2 V

– 140 200 ns
– – 900 nC
– – 2.2 °C/W
– – 3.7 °C/W

–
–

100
500

µA
µA

MHPM7B8A120A

2

MOTOROLA

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Min Typ Max Unit

BRAKE CIRCUIT

Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) I
Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V)

Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) V
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) V
Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 8.0 A) V
Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) Cies – 1000 – pF
Input Gate Charge (VCE = 600 V, IC = 8.0 A, VGE = 15 V) Q
Fall Time – Inductive Load

(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω)
Turn-On Energy

(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω)
Turn-Off Energy

(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω)
Diode Forward Voltage (IF = 8.0 A) V
Diode Reverse Leakage Current I
Thermal Resistance – IGBT R
Thermal Resistance – Diode R

(continued) (T

TJ = 25°C
TJ = 125°C

= 25°C unless otherwise noted)

J

GES

I

CES

GE(th)

(BR)CES

CE(SAT)

T

t

fi

E

(on)

E

(off)

F

R

θJC
θJC

4.0 6.0 8.0 V

1200 1300 – V

– – ± 20 µA

–
–

– 2.5 3.5 V

– 75 – nC

– 350 500 ns

– – 1.0 mJ

–
– 1.6 2.2 V
– – 50 µA
– – 2.2 °C/W
– – 3.7 °C/W

–
–

–

100
500

1.0 mJ

µA
µA

MOTOROLA

MHPM7B8A120A

3