Motorola MHPM7B16A120B Datasheet
SEMICONDUCTOR TECHNICAL DATA
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by MHPM7B16A120B/D
Integrated Power Stage for 3.0 hp Motor Drives
This module integrates a 3–phase input rectifier bridge, 3–phase output
inverter and brake transistor/diode in a single convenient package. The output
inverter utilizes advanced insulated gate bipolar transistors (IGBT) matched
with free–wheeling diodes to give optimal dynamic performance. It has been
configured for use as a three–phase motor drive module or for many other
power switching applications. The top connector pins have been designed for
easy interfacing to the user’s control board.
• Short Circuit Rated 10 µs @ 25°C
• Pin-to-Baseplate Isolation Exceeds 2500 V ac (rms)
• Convenient Package Outline
• UL
• Access to Positive and Negative DC Bus
Recognized and Designed to Meet VDE
Motorola Preferred Device
16 AMP, 1200 VOLT
HYBRID POWER MODULE
PLASTIC PACKAGE
CASE 440A–01, Style 1
MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
INPUT RECTIFIER BRIDGE
Repetitive Peak Reverse Voltage V
Average Output Rectified Current (1) I
Peak Non-repetitive Surge Current I
OUTPUT INVERTER
IGBT Reverse Voltage V
Gate-Emitter Voltage V
Continuous IGBT Collector Current I
Peak IGBT Collector Current – (PW = 1.0 ms) (2) I
Continuous Free-Wheeling Diode Current I
Peak Free-Wheeling Diode Current – (PW = 1.0 ms) (2) I
IGBT Power Dissipation P
Free-Wheeling Diode Power Dissipation P
IGBT Junction Temperature Range T
Free-Wheeling Diode Junction Temperature Range T
(1) 1 cycle = 50 or 60 Hz
(2) 1 ms = 1.0% duty cycle
Preferred devices are Motorola recommended choices for future use and best overall value.
RRM
O
FSM
CES
GES
C
C(pk)
F
F(pk)
D
D
J
J
1200 V
16 A
330 A
1200 V
± 20 V
16 A
32 A
16 A
32 A
75 W
40 W
– 40 to +125 °C
– 40 to +125 °C
Motorola, Inc. 1995
MOTOROLA
MHPM7B16A120B
1
MAXIMUM DEVICE RATINGS (continued) (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
BRAKE CIRCUIT
IGBT Reverse Voltage V
Gate-Emitter Voltage V
Continuous IGBT Collector Current I
Peak IGBT Collector Current (PW = 1.0 ms) (2) I
IGBT Power Dissipation PD 75 W
Diode Reverse Voltage V
Continuous Output Diode Current I
Peak Output Diode Current (PW = 1.0 ms) (2) I
TOTAL MODULE
Isolation Voltage – (47–63 Hz, 1.0 Minute Duration) V
Ambient Operating Temperature Range T
Operating Case Temperature Range T
Storage Temperature Range T
Mounting Torque – 6.0 lb–in
CES
GES
C
C(pk)
RRM
F
F(pk)
ISO
A
C
stg
1200 V
± 20 V
16 A
32 A
1200 V
16 A
32 A
2500 VAC
– 40 to + 85 °C
– 40 to + 90 °C
– 40 to +150 °C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
INPUT RECTIFIER BRIDGE
Reverse Leakage Current (V
Forward Voltage (IF = 16 A) V
Thermal Resistance (Each Die) R
OUTPUT INVERTER
Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) I
Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V)
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 10 mA) V
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) V
Collector-Emitter Saturation Voltage (IC = 16 A, VGE = 15 V) V
Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) Cies – 2700 – pF
Input Gate Charge (VCE = 600 V, IC = 16 A, VGE = 15 V) Q
Fall Time – Inductive Load
(VCE = 600 V, IC = 16 A, VGE = 15 V, RG = 150 Ω)
Turn-On Energy
(VCE = 600 V, IC = 16 A, VGE = 15 V, RG = 150 Ω)
Turn-Off Energy
(VCE = 600 V, IC = 16 A, VGE = 15 V, RG = 150 Ω)
Diode Forward Voltage (IF = 16 A, VGE = 0 V) V
Diode Reverse Recovery Time
(IF = 16 A, V = 600 V, dI/dt = 100 A/µs)
Diode Stored Charge (IF = 16 A, V = 400 V, di/dt = 100 A/µs) Q
Thermal Resistance – IGBT (Each Die) R
Thermal Resistance – Free-Wheeling Diode (Each Die) R
(2) 1.0 ms = 1.0% duty cycle
= 1200 V) I
RRM
TJ = 25°C
TJ = 125°C
R
F
θJC
GES
I
CES
GE(th)
(BR)CES
CE(SAT)
T
t
fi
E
(on)
E
(off)
F
t
rr
rr
θJC
θJC
– 10 50 µA
– 1.05 1.5 V
– – 2.7 °C/W
– – ± 20 µA
–
–
4.0 6.0 8.0 V
1200 1300 – V
– 2.4 3.5 V
– 100 – nC
– 350 500 ns
– – 2.5 mJ
– – 2.5 mJ
– 1.7 2.2 V
– 170 200 ns
– 850 1000 nC
– – 1.4 °C/W
– – 2.7 °C/W
–
–
100
2.0
mA
µA
MHPM7B16A120B
2
MOTOROLA
ELECTRICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
BRAKE CIRCUIT
Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) I
Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V)
TJ = 25°C
TJ = 125°C
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 10 mA) V
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) V
Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 16 A) V
Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) Cies – 2700 – pF
Input Gate Charge (VCE = 600 V, IC = 16 A, VGE = 15 V) Q
Fall Time – Inductive Load
(VCE = 600 V, IC = 16 A, VGE = 15 V, RG = 150 Ω)
Turn-On Energy
(VCE = 600 V, IC = 16 A, VGE = 15 V, RG = 150 Ω)
Turn-Off Energy
(VCE = 600 V, IC = 16 A, VGE = 15 V, RG = 150 Ω)
Diode Forward Voltage (IF = 16 A) V
Diode Reverse Leakage Current (VR = 1200 V) I
Thermal Resistance – IGBT R
Thermal Resistance – Diode R
GES
I
CES
GE(th)
(BR)CES
CE(SAT)
T
t
fi
E
(on)
E
(off)
F
R
θJC
θJC
– – ± 20 µA
–
–
4.0 6.0 8.0 V
1200 1300 – V
– 2.4 3.5 V
– 100 – nC
– 350 500 ns
– – 2.5 mJ
– – 2.5 mJ
– 1.7 2.2 V
– – 50 µA
– – 1.4 °C/W
– – 2.7 °C/W
–
–
100
2.0
mA
µA
MOTOROLA
MHPM7B16A120B
3
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