MHPM6B10A60D MHPM6B20A60D
2
MOTOROLA
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) I
GES
— — ±20 µA
Collector-Emitter Leakage Current (VCE = 600 V , VGE = 0 V)
TJ = 125°C
I
CES
— 6.0
2000
100 µA
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) V
GE(th)
4.0 6.0 8.0 V
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V) V
(BR)CES
600 — — V
Collector-Emitter Saturation Voltage (IC = I
Cmax
, VGE = 15 V)
TJ = 125°C
V
CE(SAT)
—
—
2.35
2.31
3.5
—
V
Diode Forward Voltage (IF = I
Fmax
, VGE = 0 V)
TJ = 125°C
V
F
—
—
1.23
1.12
2.0
—
V
Input Capacitance (VCE = 10 V, VGE = 0 V, f = 1.0 Mhz)
10A60
20A60
C
ies
—
—
2300
4400
—
—
pF
Input Gate Charge (VCE = 300 V , IC = I
Cmax
, VGE = 15 V)
10A60
20A60
Q
T
—
—
75
135
—
—
nC
INDUCTIVE SWITCHING CHARACTERISTICS (T
J
= 25°C)
Recommended Gate Resistor
Turn–On 10A60
20A60
Turn–Off
R
G(on)
R
G(off)
—
—
—
180
47
20
—
—
—
W
Turn-On Delay Time
(VCE = 300 V , IC = I
Cmax
, VGE = 15 V, RG as specified)
10A60
20A60
t
d(on)
—
—
375
215
—
—
ns
Rise Time
(VCE = 300 V , IC = I
Cmax
, VGE = 15 V, RG as specified)
10A60
20A60
t
r
—
—
160
125
—
—
ns
Turn–Off Delay Time
(VCE = 300 V , IC = I
Cmax
, VGE = 15 V, RG as specified)
t
d(off)
— 219 — ns
Fall Time
(VCE = 300 V , IC = I
Cmax
, VGE = 15 V, RG as specified)
t
f
— 210 500 ns
Turn-On Energy
(VCE = 300 V , IC = I
Cmax
, VGE = 15 V, RG as specified)
10A60
20A60
E
(on)
—
—
0.85
1.6
1.0
2.0
mJ
Turn-Off Energy
(VCE = 300 V , IC = I
Cmax
, VGE = 15 V, RG as specified)
10A60
20A60
E
(off)
—
—
0.13
0.3
1.0
2.0
mJ
Diode Reverse Recovery Time
(IF = I
Fmax
, V = 300 V, RG as specified)
t
rr
— 150 —
ns
Peak Reverse Recovery Current
(IF = I
Fmax
, V = 300 V, RG as specified) 10A60
20A60
I
rrm
—
—
6.8
12
—
—
A
Diode Stored Charge
(IF = I
Fmax
, V = 300 V, RG as specified) 10A60
20A60
Q
rr
—
—
560
1060
—
—
nC