Motorola MHPM6B10A60D, MHPM6B20A60D Datasheet
1
MHPM6B10A60D MHPM6B20A60D
MOTOROLA
Integrated Power Stage
for 230 VAC Motor Drives
These modules integrate a 3–phase inverter in a single convenient package.
They are designed for 1.0 and 2.0 hp motor drive applications. The inverter
incorporates advanced insulated gate bipolar transistors (IGBT) matched with
free–wheeling diodes to give optimum performance. The top connector pins are
designed for easy interfacing to the user’s control board.
• Short Circuit Rated 10 µs @ 125°C
• Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)
• Compact Package Outline
• Access to Positive and Negative DC Bus
• UL
Recognized
MAXIMUM DEVICE RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
IGBT Reverse Voltage V
CES
600 V
Gate-Emitter Voltage V
GES
± 20 V
Continuous IGBT Collector Current 10A60
20A60
I
Cmax
10
20
A
Peak Repetitive IGBT Collector Current
(1)
10A60
20A60
I
C(pk)
20
40
A
Continuous Diode Current 10A60
20A60
I
Fmax
10
20
A
Peak Repetitive Diode Current
(1)
10A60
20A60
I
F(pk)
20
40
A
IGBT Power Dissipation (TC = 25°C) 10A60
20A60
P
D
52
78
W
Diode Power Dissipation (TC = 25°C) 10A60
20A60
P
D
19
38
W
IGBT Power Dissipation (TC = 95°C) 10A60
20A60
P
D
23
34
W
Diode Power Dissipation (TC = 95°C) 10A60
20A60
P
D
8.3
17
W
Junction Temperature Range T
J
– 40 to +150 °C
Short Circuit Duration (VCC = 300 V , TJ = 125°C) t
sc
10
m
sec
Isolation Voltage V
ISO
2500 V
Operating Case Temperature Range T
C
– 40 to +95 °C
Storage Temperature Range T
stg
– 40 to +125 °C
Mounting Torque — Heat Sink Mounting Holes (#8 or M4 screws) — 12 in–lb
(1) 1.0 ms = 1.0% duty cycle
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MHPM6B10A60D/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1997
10, 20 AMP, 600 V
HYBRID POWER MODULES
PRELIMINARY
Motorola Preferred Devices
REV 2
MHPM6B10A60D MHPM6B20A60D
2
MOTOROLA
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) I
GES
— — ±20 µA
Collector-Emitter Leakage Current (VCE = 600 V , VGE = 0 V)
TJ = 125°C
I
CES
— 6.0
2000
100 µA
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) V
GE(th)
4.0 6.0 8.0 V
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V) V
(BR)CES
600 — — V
Collector-Emitter Saturation Voltage (IC = I
Cmax
, VGE = 15 V)
TJ = 125°C
V
CE(SAT)
—
—
2.35
2.31
3.5
—
V
Diode Forward Voltage (IF = I
Fmax
, VGE = 0 V)
TJ = 125°C
V
F
—
—
1.23
1.12
2.0
—
V
Input Capacitance (VCE = 10 V, VGE = 0 V, f = 1.0 Mhz)
10A60
20A60
C
ies
—
—
2300
4400
—
—
pF
Input Gate Charge (VCE = 300 V , IC = I
Cmax
, VGE = 15 V)
10A60
20A60
Q
T
—
—
75
135
—
—
nC
INDUCTIVE SWITCHING CHARACTERISTICS (T
J
= 25°C)
Recommended Gate Resistor
Turn–On 10A60
20A60
Turn–Off
R
G(on)
R
G(off)
—
—
—
180
47
20
—
—
—
W
Turn-On Delay Time
(VCE = 300 V , IC = I
Cmax
, VGE = 15 V, RG as specified)
10A60
20A60
t
d(on)
—
—
375
215
—
—
ns
Rise Time
(VCE = 300 V , IC = I
Cmax
, VGE = 15 V, RG as specified)
10A60
20A60
t
r
—
—
160
125
—
—
ns
Turn–Off Delay Time
(VCE = 300 V , IC = I
Cmax
, VGE = 15 V, RG as specified)
t
d(off)
— 219 — ns
Fall Time
(VCE = 300 V , IC = I
Cmax
, VGE = 15 V, RG as specified)
t
f
— 210 500 ns
Turn-On Energy
(VCE = 300 V , IC = I
Cmax
, VGE = 15 V, RG as specified)
10A60
20A60
E
(on)
—
—
0.85
1.6
1.0
2.0
mJ
Turn-Off Energy
(VCE = 300 V , IC = I
Cmax
, VGE = 15 V, RG as specified)
10A60
20A60
E
(off)
—
—
0.13
0.3
1.0
2.0
mJ
Diode Reverse Recovery Time
(IF = I
Fmax
, V = 300 V, RG as specified)
t
rr
— 150 —
ns
Peak Reverse Recovery Current
(IF = I
Fmax
, V = 300 V, RG as specified) 10A60
20A60
I
rrm
—
—
6.8
12
—
—
A
Diode Stored Charge
(IF = I
Fmax
, V = 300 V, RG as specified) 10A60
20A60
Q
rr
—
—
560
1060
—
—
nC
3
MHPM6B10A60D MHPM6B20A60D
MOTOROLA
INDUCTIVE SWITCHING CHARACTERISTICS
(TJ = 125°C)
Characteristic Symbol Min Typ Max Unit
Turn–On Delay Time
(VCE = 300 V , IC = I
Cmax
, VGE = 15 V, RG as specified)
10A60
20A60
t
d(on)
—
—
335
200
—
—
ns
Rise Time
(VCE = 300 V , IC = I
Cmax
, VGE = 15 V, RG as specified)
10A60
20A60
t
r
—
—
160
125
—
—
ns
Turn–Off Delay Time
(VCE = 300 V , IC = I
Cmax
, VGE = 15 V, RG as specified)
t
d(off)
— 230 —
ns
Fall Time
(VCE = 300 V , IC = I
Cmax
, VGE = 15 V, RG as specified)
t
f
— 460 —
ns
Turn–On Energy
(VCE = 300 V , IC = I
Cmax
, VGE = 15 V, RG as specified)
10A60
20A60
E
(on)
—
—
1.2
2.2
—
—
mJ
Turn–Off Energy
(VCE = 300 V , IC = I
Cmax
, VGE = 15 V, RG as specified)
10A60
20A60
E
(off)
—
—
0.44
0.82
—
—
mJ
Diode Reverse Recovery Time
(IF = I
Fmax
, V = 300 V, RG as specified)
t
rr
— 240 —
ns
Peak Reverse Recovery Current
(IF = I
Fmax
, V = 300 V, RG as specified) 10A60
20A60
I
rrm
—
—
10
18
—
—
A
Diode Stored Charge
(IF = I
Fmax
, V = 300 V, RG as specified) 10A60
20A60
Q
rr
—
—
1330
2400
—
—
nC
THERMAL CHARACTERISTICS (Each Die)
Thermal Resistance — IGBT 10A60
20A60
R
q
JC
—
—
1.94
1.28
2.43
1.60
°C/W
Thermal Resistance — Free–Wheeling Diode 10A60
20A60
R
q
JC
—
—
5.28
2.61
6.60
3.26
°C/W