Motorola MGY30N60D Datasheet
1
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit
withstand time s uch as M otor Control Drives. Fast s witching
characteristics result in efficient operations at high frequencies.
Co–packaged IGBT’s save space, reduce assembly time and cost.
• Industry Standard High Power TO–264 Package (TO–3PBL)
• High Speed E
off
: 60 mJ per Amp typical at 125°C
• High Short Circuit Capability – 10 ms minimum
• Soft Recovery Free Wheeling Diode is included in the package
• Robust High Voltage Termination
• Robust RBSOA
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector–Emitter Voltage V
CES
600 Vdc
Collector–Gate Voltage (RGE = 1.0 MΩ) V
CGR
600 Vdc
Gate–Emitter Voltage — Continuous V
GE
±20 Vdc
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
I
C25
I
C90
I
CM
50
30
100
Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25°C
P
D
202
1.61
Watts
W/°C
Operating and Storage Junction Temperature Range TJ, T
stg
–55 to 150 °C
Short Circuit Withstand Time
(VCC = 360 Vdc, VGE = 15 Vdc, TJ = 25°C, RG = 20 Ω)
t
sc
10
m
s
Thermal Resistance — Junction to Case – IGBT
— Junction to Case – Diode
— Junction to Ambient
R
θJC
R
θJC
R
θJA
0.62
1.41
35
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds T
L
260 °C
Mounting Torque, 6–32 or M3 screw
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature.
Designer’s Data for “Worst Case” Conditions —The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MGY30N60D/D
SEMICONDUCTOR TECHNICAL DATA
IGBT & DIODE IN TO–264
30 A @ 90°C
50 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
CASE 340G–02, Style 5
TO–264
Motorola Preferred Device
G
C
E
C
E
G
Motorola, Inc. 1995
MGY30N60D
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 250 µAdc)
Temperature Coefficient (Positive)
BV
CES
600
—
—
870
—
—
Vdc
mV/°C
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)
I
CES
—
—
—
—
100
2500
µAdc
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) I
GES
— — 250 nAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 15 Adc)
(VGE = 15 Vdc, IC = 15 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 30 Adc)
V
CE(on)
—
—
—
2.20
2.10
2.60
2.90
—
3.45
Vdc
Gate Threshold Voltage
(VCE = VGE, IC = 1 mAdc)
Threshold Temperature Coefficient (Negative)
V
GE(th)
4.0
—
6.0
10
8.0
—
Vdc
mV/°C
Forward Transconductance (VCE = 10 Vdc, IC = 30 Adc) g
fe
— 15 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ies
— 4280 — pF
Output Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
C
oes
— 225 —
Transfer Capacitance
f = 1.0 MHz)
C
res
— 19 —
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
t
d(on)
— 76 — ns
Rise Time
t
r
— 80 —
Turn–Off Delay Time
t
d(off)
— 348 —
Fall Time
CC
= 360 Vdc, IC = 30 Adc,
VGE = 15 Vdc, L = 300 mH
R
= 20 Ω, T
= 25°C)
t
f
— 188 —
Turn–Off Switching Loss
m
H
RG = 20 Ω, TJ = 25°C)
Energy losses include “tail”
E
off
— 0.98 1.28 mJ
Turn–On Switching Loss
m
H
RG = 20 Ω, TJ = 25°C)
Energy losses include “tail”
E
on
— 2.00 —
Total Switching Loss
m
H
RG = 20 Ω, TJ = 25°C)
Energy losses include “tail”
E
ts
— 2.98 —
Turn–On Delay Time
t
d(on)
— 73 — ns
Rise Time
t
r
— 95 —
Turn–Off Delay Time
t
d(off)
— 394 —
Fall Time
CC
= 360 Vdc, IC = 30 Adc,
VGE = 15 Vdc, L = 300 mH
R
= 20 Ω, T
= 125°C)
t
f
— 418 —
Turn–Off Switching Loss
m
H
RG = 20 Ω, TJ = 125°C)
Energy losses include “tail”
E
off
— 1.90 — mJ
Turn–On Switching Loss
m
H
RG = 20 Ω, TJ = 125°C)
Energy losses include “tail”
E
on
— 3.10 —
Total Switching Loss
m
H
RG = 20 Ω, TJ = 125°C)
Energy losses include “tail”
E
ts
— 5.00 —
Q
T
— 150 — nC
(VCC = 360 Vdc, IC = 30 Adc,
V
= 15 Vdc)
Q
1
— 30 —
VGE = 15 Vdc)
Q
2
— 45 —
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 15 Adc)
(IEC = 15 Adc, TJ = 125°C)
(IEC = 30 Adc)
V
FEC
—
—
—
1.30
1.10
1.45
1.80
—
2.05
Vdc
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (continued)
Gate Charge
(VCC = 360 Vdc, IC = 30 Adc,
(VCC = 360 Vdc, IC = 30 Adc,
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