Motorola MGW12N120D Datasheet
1
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit
withstand time s uch as M otor Control Drives. Fast s witching
characteristics result in efficient operation at high frequencies.
Co–packaged IGBT’s save space, reduce assembly time and cost.
• Industry Standard High Power TO–247 Package with
Isolated Mounting Hole
• High Speed E
off
: 160 mJ per Amp typical at 125°C
• High Short Circuit Capability – 10 ms minimum
• Soft Recovery Free Wheeling Diode is included in the package
• Robust High Voltage Termination
• Robust RBSOA
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector–Emitter Voltage V
CES
1200 Vdc
Collector–Gate Voltage (RGE = 1.0 MΩ) V
CGR
1200 Vdc
Gate–Emitter Voltage — Continuous V
GE
±20 Vdc
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
I
C25
I
C90
I
CM
20
12
40
Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25°C
P
D
123
0.98
Watts
W/°C
Operating and Storage Junction Temperature Range TJ, T
stg
–55 to 150 °C
Short Circuit Withstand Time
(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)
t
sc
10
m
s
Thermal Resistance — Junction to Case – IGBT
— Junction to Case – Diode
— Junction to Ambient
R
θJC
R
θJC
R
θJA
1.0
1.4
45
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds T
L
260 °C
Mounting Torque, 6–32 or M3 screw
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics— are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Order this document
by MGW12N120D/D
SEMICONDUCTOR TECHNICAL DATA
IGBT & DIODE IN TO–247
12 A @ 90°C
20 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
CASE 340F–03, Style 4
TO–247AE
Motorola Preferred Device
G
C
E
C
E
G
Motorola, Inc. 1996
MGW12N120D
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25 µAdc)
Temperature Coefficient (Positive)
BV
CES
1200
—
—
870
—
—
Vdc
mV/°C
Zero Gate Voltage Collector Current
(VCE = 1200 Vdc, VGE = 0 Vdc)
(VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125°C)
I
CES
—
—
—
—
100
2500
µAdc
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) I
GES
— — 250 nAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 5.0 Adc)
(VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 10 Adc)
V
CE(on)
—
—
—
2.71
3.78
3.72
3.37
—
4.42
Vdc
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
V
GE(th)
4.0
—
6.0
10
8.0
—
Vdc
mV/°C
Forward Transconductance (VCE = 10 Vdc, IC = 10 Adc) g
fe
— 12 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ies
— 1003 — pF
Output Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
C
oes
— 126 —
Transfer Capacitance
f = 1.0 MHz)
C
res
— 106 —
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
t
d(on)
— 74 — ns
Rise Time
(VCC = 720 Vdc, IC = 10 Adc,
VGE = 15 Vdc, L = 300 mH
t
r
— 83 —
Turn–Off Delay Time
VGE = 15 Vdc, L = 300 mH
RG = 20 Ω, TJ = 25°C)
t
d(off)
— 76 —
Fall Time
m
H
RG = 20 Ω, TJ = 25°C)
Energy losses include “tail”
t
f
— 231 —
Turn–Off Switching Loss E
off
— 0.55 1.33 mJ
Turn–On Switching Loss E
on
— 1.21 1.88
Total Switching Loss E
ts
— 1.76 3.21
Turn–On Delay Time
t
d(on)
— 66 — ns
Rise Time
(VCC = 720 Vdc, IC = 10 Adc,
VGE = 15 Vdc, L = 300 mH
t
r
— 87 —
Turn–Off Delay Time
VGE = 15 Vdc, L = 300 mH
RG = 20 Ω, TJ = 125°C)
t
d(off)
— 120 —
Fall Time
m
H
RG = 20 Ω, TJ = 125°C)
Energy losses include “tail”
t
f
— 575 —
Turn–Off Switching Loss E
off
— 1.49 — mJ
Turn–On Switching Loss E
on
— 2.37 —
Total Switching Loss E
ts
— 3.86 —
Q
T
— 29 — nC
(VCC = 720 Vdc, IC = 10 Adc,
V
= 15 Vdc)
Q
1
— 13 —
VGE = 15 Vdc)
Q
2
— 12 —
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 5.0 Adc)
(IEC = 5.0 Adc, TJ = 125°C)
(IEC = 10 Adc)
V
FEC
—
—
—
2.26
1.37
2.86
3.32
—
4.18
Vdc
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (continued)
Gate Charge
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