MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
8MB Synchronous Fast Static
Order this document
by MCM72F10/D
MCM72F10
RAM Module
The MCM72F10 (2MB) is configured as 1M x 72 bits. It is packaged in a
168–pin dual–in–line memory module DIMM. The module uses Motorola’s 3.3 V ,
256K x 18 bit flow–through BurstRAMs.
Address (A), data inputs (DQ, DP), and all control signals except output enable
) are clock (K) controlled through positive–edge–triggered noninverting
(G
registers.
Write cycles are internally self–timed and initiated by the rising edge of the
clock (K) input. This feature provides increased timing flexibility for incoming
signals. Synchronous byte write (W
both bytes.
• Single 3.3 V + 10%, – 5% Power Supply
• Plug and Pin Compatibility with 1MB, 2MB, and 4MB
• Multiple Clock Pins for Reduced Loading
• All Inputs and Outputs are L VTTL Compatible
• Byte Write Capability
• Fast SRAM Access Times: 8/9/12 ns
• High Quality Multi–Layer FR4 PWB With Separate Power and Ground
Planes
• Amp Connector, Part Number: 390064–4
• 168–Pin DIMM Module
) allows writes to either individual bytes or to
168–LEAD DIMM
CASE TBD
TOP VIEW
1
11
40
41
REV 1
11/26/97
Motorola, Inc. 1997
MOTOROLA FAST SRAM
84
MCM72F10
1
BLOCK DIAGRAM
256K x 18
SE1
G
A0 – A17
ADSC
SBa
SBb
K
DQa0 – DQa7
DQa8
DQb0 – DQb7
DQb8
SE2
ADV
V
DD
V
SS
ADSP
SGW
SW
LBO
SE3
256K x 18
SE1
G
A0 – A17
ADSC
SBa
SBb
K
DQa0 – DQa7
DQa8
DQb0 – DQb7
DQb8
SE2
ADV
ADSP
SGW
SW
LBO
SE3
256K x 18
SE1
G
A0 – A17
ADSC
SBa
SBb
K
DQa0 – DQa7
DQa8
DQb0 – DQb7
DQb8
SE2
ADV
ADSP
SGW
SW
LBO
SE3
256K x 18
SE1
G
A0 – A17
ADSC
SBa
SBb
K
DQa0 – DQa7
DQa8
DQb0 – DQb7
DQb8
SE2
ADV
ADSP
SGW
SW
LBO
SE3
E0
G0
A0 – A17
ADSP
W0
W1
KO
A18
V
DD
V
SS
DQ0 – DQ7
DP0
DQ8 – DQ15
DP1
V
DD
V
SS
E1
G1
256K x 18
SE1
G
A0 – A17
ADSC
SBa
SBb
K
DQa0 – DQa7
DQa8
DQb0 – DQb7
DQb8
SE2
ADV
ADSP
SGW
SW
LBO
SE3
DQ16 – DQ23
DQ24 – DQ31
256K x 18
A0 – A17
ADSC
SBa
SBb
K
DQb8
DQb0 – DQb7
DQa8
DQa0 – DQa7
SE2
ADV
ADSP
SGW
SW
LBO
SE3
SE1
G
DP2
DP3
W2
W3
256K x 18
SE1
G
A0 – A17
ADSC
SBa
K1
SBb
K
DQa0 – DQa7
DQa8
DQb0 – DQb7
DQb8
SE2
ADV
ADSP
SGW
SW
LBO
SE3
DQ32 – DQ39
DQ40 – DQ47
DP4
DP5
W4
W5
K2
256K x 18
SE1
G
A0 – A17
ADSC
SBa
SBb
K
DQa0 – DQa7
DQa8
DQb0 – DQb7
DQb8
SE2
ADV
ADSP
SGW
SW
LBO
SE3
DQ48 – DQ55
DQ56 – DQ63
DP6
DP7
W6
W7
256K x 18
SE1
G
A0 – A17
ADSC
SBa
K3
SBb
K
DQa0 – DQa7
DQa8
DQb0 – DQb7
DQb8
SE2
ADV
ADSP
SGW
SW
LBO
SE3
256K x 18 256K x 18 256K x 18
A0 – A17
ADSC
SBa
SBb
K
DQb8
DQb0 – DQb7
DQa8
DQa0 – DQa7
SE2
ADV
ADSP
SGW
SW
LBO
SE3
SE1
G
A0 – A17
ADSC
SBa
SBb
K
DQb8
DQb0 – DQb7
DQa8
DQa0 – DQa7
SE2
ADV
ADSP
SGW
SW
LBO
SE3
SE1
G
A0 – A17
ADSC
SBa
SBb
K
DQb8
DQb0 – DQb7
DQa8
DQa0 – DQa7
SE2
ADV
ADSP
SGW
SW
LBO
SE3
SE1
G
V
DD
V
SS
MCM72F10
2
256K x 18
A0 – A17
ADSC
SBa
SBb
K
DQb8
DQb0 – DQb7
DQa8
DQa0 – DQa7
SE2
ADV
ADSP
SGW
SW
LBO
SE3
SE1
G
256K x 18 256K x 18 256K x 18
A0 – A17
ADSC
SBa
SBb
K
DQb8
DQb0 – DQb7
DQa8
DQa0 – DQa7
SE2
ADV
ADSP
SGW
SW
LBO
SE3
SE1
G
A0 – A17
ADSC
SBa
SBb
K
DQb8
DQb0 – DQb7
DQa8
DQa0 – DQa7
SE2
ADV
ADSP
SGW
SW
LBO
SE3
SE1
G
A0 – A17
ADSC
SBa
SBb
K
DQb8
DQb0 – DQb7
DQa8
DQa0 – DQa7
SE2
ADV
ADSP
SGW
SW
LBO
SE3
SE1
G
MOTOROLA FAST SRAM
PIN DESCRIPTIONS
Pin Locations Symbol Type Description
59, 61, 62, 64, 65, 67, 68, 70,
71, 72, 143, 145, 146, 148,
149, 151, 152, 154, 155
156 ADSP Input Synchronous Addresss Status Controller: Initiates read, write, or chip
15, 31, 44, 86, 92, 105, 121,
134
2, 3, 5, 6, 8, 9, 11, 12, 14, 17,
18, 20, 21, 23, 24, 26, 27, 32,
34, 35, 37, 38, 40, 41, 43, 46,
47, 49, 50, 52, 53, 55, 56, 87,
89, 90, 93, 95, 96, 98, 99,
101, 102, 104, 107, 108, 110,
111, 115, 1 16, 118, 119, 122,
124, 125, 127, 128, 130, 131,
133, 136, 137, 139, 140
83, 167 E0, E1 Input Synchronous Chip Enable: Active low to enable chip. Negated high —
82, 166 G0, G1 Input Asynchronous Output Enable Input:
29, 74, 113, 158 K0 – K3 Input Clock: This signal registers the address, data in, and all control signals
76, 77, 79, 80, 160, 161, 163,
164
4, 16, 33, 45, 57, 69, 94, 106,
123, 135, 147, 165
1, 7, 10, 13, 19, 22, 25, 28,
30, 36, 39, 42, 48, 51, 54, 60,
63, 66, 73, 75, 78, 81, 84, 85,
88, 91, 97, 100, 103, 109,
112, 114, 117, 120, 126, 129,
132, 138, 141, 144, 150, 153,
157, 159, 162, 168
58, 142 NC No Connection: There is no connection to the chip.
A0 – A18 Input Synchronous Address Inputs: These inputs are registered and must meet
DP0 – DP7 Synchronous Parity Data Inputs/Outputs.
DQ0 – DQ63 I/O Synchronous Data Inputs/Outputs.
W0 – W7 Input Synchronous Byte Write Inputs: x refers to the byte being written (byte a,
V
DD
V
SS
Supply Power Supply: 3.3 V + 10%, – 5%. Must be connected on all modules.
Supply Ground.
setup and hold times.
deselect cycle.
blocks ADSP
Low — enables output buffer.
High — DQx pins are high impedance.
except G
b).
or deselects chip when ADSC is asserted.
and LBO.
DATA RAM MCM69F618A SYNCHRONOUS TRUTH TABLE (See Notes 1, 2, 3, and 4)
Next Cycle Address Used E ADSP G DQx WRITE
Deselect None 1 0 X High–Z X
Begin Read External Address 0 0 0 DQ Read
Read Current X 1 1 High–Z Read
Read Current X 1 0 DQ Read
Begin Write External 0 0 X High–Z Write
Write Current X 1 X High–Z Write
NOTES:
1. X = don’t care, 1 = logic high, 0 = logic low.
2. Write is defined as any Wx
3. G
is an asynchronous signal and is not sampled by the clock K. G drives the bus immediately (t
4. On write cycles that follow read cycles, G
also remain negated at the completion of the write cycle to ensure proper write data hold times.
low.
must be negated prior to the start of the write cycle to ensure proper write data setup times. G must
MCM72F10
4
) following G going low.
GLQX
MOTOROLA FAST SRAM