Motorola MCM67M618AFN10, MCM67M618AFN12, MCM67M618AFN9, MCM67M618FN9, MCM67M618FN10 Datasheet

MCM67M618A

1

MOTOROLA FAST SRAM

Product Preview

64K x 18 Bit BurstRAM
Synchronous Fast Static RAM

With Burst Counter and Self–Timed Write

The MCM67M618A is a 1,179,648 bit synchronous static random access
memory designed to provide a burstable, high–performance, secondary cache
for the MC68040 and PowerPC microprocessors. It is organized as 65,536
words of 18 bits, fabricated using Motorola’s high–performance silicon–gate
BiCMOS technology. The device integrates input registers, a 2–bit counter , high
speed SRAM, and high drive capability outputs onto a single monolithic circuit
for reduced parts count implementation of cache data RAM applications. Syn­chronous design allows precise cycle control with the use of an external clock (K).
BiCMOS circuitry reduces the overall power consumption of the integrated func­tions for greater reliability.

Addresses (A0 – A15), data inputs (DQ0 – DQ17), and all control signals,
except output enable (G

), are clock (K) controlled through positive–edge–

triggered noninverting registers.

Bursts can be initiated with either transfer start processor (TSP

) or transfer

start cache controller (TSC

) input pins. Subsequent burst addresses are gen­erated internally by the MCM67M618A (burst sequence imitates that of the
MC68040) and controlled by the burst address advance (BAA

) input pin. The

following pages provide more detailed information on burst controls.

Write cycles are internally self–timed and are initiated by the rising edge of the
clock (K) input. This feature eliminates complex off–chip write pulse generation
and provides increased flexibility for incoming signals.

Dual write enables (LW

and UW) are provided to allow individually writeable

bytes. LW

controls DQ0 – DQ8 (the lower bits), while UW controls DQ9 – DQ17

(the upper bits).

This device is ideally suited for systems that require wide data bus widths and
cache memory.

• Single 5 V ±

5% Power Supply

• Fast Access Times: 9/10/12 ns Max

• Byte Writeable via Dual Write Strobes

• Internal Input Registers (Address, Data, Control)

• Internally Self–Timed Write Cycle

• TSP

, TSC, and BAA Burst Control Pins

• Asynchronous Output Enable Controlled Three–State Outputs

• Common Data Inputs and Data Outputs

• High Board Density 52–PLCC Package

• 3.3 V I/O Compatible

BurstRAM is a trademark of Motorola, Inc.
PowerPC is a trademark of IBM Corp.

This document contains information on a new product under development. Motorola reserves the right to change or discontinue this product without notice.

PIN ASSIGNMENT

10

9

8

DQ9

V

CC

DQ8

12

11

15

14

13

17

16

20

19

18

37

38

34

35

36

42

43

39

40

41

45

46

44

21 22 23 24 25 26 27 28 29 30 31 32 33

7 6 5 4 3 2 1 52 51 50 49 4847

DQ6

DQ7

V

SS

DQ4

DQ5

DQ2

DQ3

V

SS

V

CC

DQ0

DQ1

V

CC

V

SS

V

SS

V

CC

DQ10

DQ11
DQ12
DQ13
DQ14

DQ15
DQ16
DQ17

A6A7E

UW

K

A8A9A10

LW

G

A15

A4A3A2

A1

A13

A14

A12

A11

V

SS

A5

A0

V

CC

BAA

TSC

TSP

All power supply and ground pins must be
connected for proper operation of the device.

PIN NAMES

A0 – A15 Address Inputs. . . . . . . . . . . . . . . .

K Clock. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

BAA Burst Address Advance. . . . . . . . . . . .

LW

Lower Byte Write Enable. . . . . . . . . . . .

UW

Upper Byte Write Enable. . . . . . . . . . . .

TSP

, TSC Transfer Start. . . . . . . . . . . . . . . .

E

Chip Enable. . . . . . . . . . . . . . . . . . . . . . . . .

G

Output Enable. . . . . . . . . . . . . . . . . . . . . .

DQ0 – DQ17 Data Input/Output. . . . . . . . . .

V

CC

+ 5 V Power Supply. . . . . . . . . . . . . . . .

V

SS

Ground. . . . . . . . . . . . . . . . . . . . . . . . . .

Order this document

by MCM67M618A/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MCM67M618A

FN PACKAGE

PLASTIC

CASE 778–02

REV 1
5/95

 Motorola, Inc. 1994

MCM67M618A
2

MOTOROLA FAST SRAM

BLOCK DIAGRAM (See Note)

EXTERNAL

ADDRESS

16

9

9

18

16

A15 – A2

DQ0 – DQ8

INTERNAL
ADDRESS

64K x 18

MEMORY

ARRAY

ADDRESS

REGISTERS

WRITE

REGISTER

ENABLE

REGISTER

DATA–IN

REGISTERS

OUTPUT
BUFFER

BAA

K

TSP

TSC

A15 – A0

UW

E

G

9

DQ9 – DQ17

99

9

LW

A0

′

A1

′

A1

LOAD

D1

BINARY

COUNTER

D0

Q1

Q0

BURST LOGIC

A0

NOTE: All registers are positive–edge triggered. The TSC or TSP signals control the duration of the burst and the start of the next

burst. When TSP

is sampled low, any ongoing burst is interrupted and a read (independent of W and TSC) is performed

using the new external address. Alternatively, a TSP

–initiated two cycle WRITE can be performed by asserting TSP and

a valid address on the first cycle, then negating both TSP

and TSC and asserting LW and/or UW with valid data on the se­cond cycle (see Single Write Cycle in WRITE CYCLES timing diagram).
When TSC

is sampled low (and TSP is sampled high), any ongoing burst is interrupted and a read or write (dependent on

W

) is performed using the new external address. Chip enable (E) is sampled only when a new base address is loaded. After

the first cycle of the burst, BAA

controls subsequent burst cycles. When BAA is sampled low, the internal address is ad-

vanced prior to the operation. When BAA

is sampled high, the internal address is not advanced, thus inserting a wait state
into the burst sequence accesses. Upon completion of a burst, the address will wrap around to its initial state. See BURST
SEQUENCE TABLE. Write refers to either or both byte write enables (LW

, UW).

BURST SEQUENCE GRAPH

(See Note)

1,0

1,1

0,0

0,1

A1

′

, A0′ =

NOTE: The external two values for A1 and A0

provide the starting point for t he burst
sequence g raph. T he burst logic ad­vances A1 and A0 as shown above.

MCM67M618A

3

MOTOROLA FAST SRAM

SYNCHRONOUS TRUTH TABLE (See Notes 1, 2, and 3)

E

TSP TSC BAA LW or UW K Address Operation

H L X X X L–H N/A Deselected
H X L X X L–H N/A Deselected

L L X X X L–H External Address Read Cycle, Begin Burst
L H L X L L–H External Address Write Cycle, Begin Burst
L H L X H L–H External Address Read Cycle, Begin Burst
X H H L L L–H Next Address Write Cycle, Continue Burst
X H H L H L–H Next Address Read Cycle, Continue Burst
X H H H L L–H Current Address Write Cycle, Suspend Burst
X H H H H L–H Current Address Read Cycle, Suspend Burst

NOTES:

1. X means Don’t Care.

2. All inputs except G

must meet setup and hold times for the low–to–high transition of clock (K).

3. Wait states are inserted by suspending burst.

ASYNCHRONOUS TRUTH TABLE (See Notes 1 and 2)

Operation

G I/O Status

Read L Data Out
Read H High–Z
Write X High–Z — Data In

Deselected X High–Z

NOTES:

1. X means Don’t Care.

2. For a write operation following a read operation, G

must be high before the input data

required setup time and held high through the input data hold time.

ABSOLUTE MAXIMUM RATINGS (Voltages Referenced to V

SS

= 0 V)

Rating

Symbol Value Unit

Power Supply Voltage V

CC

– 0.5 to + 7.0 V

Voltage Relative to VSS for Any
Pin Except V

CC

Vin, V

out

– 0.5 to VCC + 0.5 V

Output Current (per I/O) I

out

± 30 mA

Power Dissipation P

D

1.6 W

Temperature Under Bias T

bias

– 10 to + 85 °C

Operating Temperature T

A

0 to +70 °C

Storage Temperature T

stg

– 55 to + 125 °C

NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are

exceeded. Functional operation should be restricted to RECOMMENDED OPER­ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.

This device contains circuitry to protect the

inputs against damage due to high static volt

­ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi­mum rated voltages to this high–impedance
circuit.

This BiCMOS memory circuit has been
designed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established.

This device contains circuitry that will ensure
the output devices are in High–Z at power up.

MCM67M618A
4

MOTOROLA FAST SRAM

DC OPERATING CONDITIONS AND CHARACTERISTICS

(VCC = 5.0 V ± 5%, TA = 0 to + 70°C, Unless Otherwise Noted)

RECOMMENDED OPERATING CONDITIONS

(Voltages referenced to VSS = 0 V)

Parameter

Symbol Min Max Unit

Supply Voltage (Operating Voltage Range) V

CC

4.75 5.25 V

Input High Voltage V

IH

2.2

VCC + 0.3**

V

Input Low Voltage V

IL

– 0.5* 0.8 V

*VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width ≤ 20.0 ns) for I ≤ 20.0 mA.

**VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2.0 V ac (pulse width ≤ 20.0 ns) for I ≤ 20.0 mA.

DC CHARACTERISTICS AND SUPPLY CURRENTS

Parameter Symbol Min Max Unit

Input Leakage Current (All Inputs, Vin = 0 to VCC) I

lkg(I)

— ± 1.0 µA

Output Leakage Current (G = VIH) I

lkg(O)

— ± 1.0 µA

AC Supply Current (G = VIH, E = VIL, I

out

= 0 mA, All Inputs = VIL or VIH,

VIL = 0.0 V and VIH ≥ 3.0 V, Cycle Time ≥ t

KHKH

min)

I

CCA9

I

CCA10

I

CCA12

— 275

265
250

mA

AC Standby Current (E = VIH, I

out

= 0 mA, All Inputs = VIL and V

IH,

VIL = 0.0 V and VIH ≥ 3.0 V, Cycle Time ≥ t

KHKH

min)

I

SB1

— 95 mA

Output Low Voltage (IOL = + 8.0 mA) V

OL

— 0.4 V

Output High Voltage (IOH = – 4.0 mA) V

OH

2.4 3.3 V

NOTE: Good decoupling of the local power supply should always be used. DC characteristics are guaranteed for all possible 68040 and PowerPC

bus cycles.

CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, T

A

= 25°C, Periodically Sampled Rather Than 100% Tested)

Parameter

Symbol Min Typ Max Unit

Input Capacitance (All Pins Except DQ0 – DQ17) C

in

— 4 5 pF

Input/Output Capacitance (DQ0 – DQ17) C

I/O

— 6 8 pF