Motorola MCM63Z818TQ133, MCM63Z818TQ100, MCM63Z818TQ100R, MCM63Z736TQ133, MCM63Z736TQ133R Datasheet

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
128K x 36 and 256K x 18 Bit Pipelined ZBT RAM Synchronous Fast Static RAM
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by MCM63Z736/D
MCM63Z736 MCM63Z818
Addresses (SA), data inputs (DQ), and all control signals except output enable
) and linear burst order (LBO) are clock (CK) controlled through positive–
(G edge–triggered noninverting registers.
Write cycles are internally self–timed and are initiated by the rising edge of the clock (CK) input. This feature eliminates complex off–chip write pulse generation and provides increased timing flexibility for incoming signals.
For read cycles, pipelined SRAM output data is temporarily stored by an edge– triggered output register and then released to the output buffers at the next rising edge of clock (CK).
3.3 V L VTTL and LVCMOS Compatible
MCM63Z736/MCM63Z818–133 = 4.2 ns Access/7.5 ns Cycle (133 MHz)
MCM63Z736/MCM63Z818–100 = 5 ns Access/10 ns Cycle (100 MHz)
Selectable Burst Sequencing Order (Linear/Interleaved)
Internally Self–Timed Write Cycle
Two–Cycle Deselect
Byte Write Control
ADV Controlled Burst
100–Pin TQFP Package
TQ PACKAGE
TQFP
CASE 983A–01
ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc., and the architecture is supported by Micron Technology, Inc. and Motorola, Inc.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
REV 1 2/6/98
Motorola, Inc. 1998
MOTOROLA FAST SRAM
MCM63Z736DMCM63Z818
1
PIN ASSIGNMENT
V
DDQ
V
DDQ
V V V
DQd
V
DDQ
DQd DQd DQd DQd
V
DDQ
DQd DQd DQd
DQc DQc DQc
V
SS DQc DQc
DQc DQc V
SS DQc
DQc
DD DD DD
V
SS DQd
V
SS
V
SS
1 2 3 4 5 6 7 8
9
10 11 12 13 14 15 16 17 18 19 20
21 22 23 24 25 26 27 28 29 30
31 3233
SASASE1
DD
SE2
SBc
SBa
SBb
SBd
94 93979695 89889291 90 8685871009998 81828384
3738343536 42433940 41 454644
SE3
CK
VSSV
SW
CKE
G
ADV
NC
NC
SA
50494847
80 79 78 77 76 75
74 73
72 71
70 69
68 67
66 65 64 63 62 61 60 59 58 57 56 55 54
53 52 51
SA
DQb DQb DQb V
DDQ
V
SS
DQb DQb DQb DQb V
SS
V
DDQ DQb DQb V
SS V
DD V
DD V
SS DQa
DQa V
DDQ V
SS DQa
DQa DQa DQa V
SS V
DDQ DQa DQa
DQa
SASASA
LBO
SA
NC
SA1
SA0
TOP VIEW
MCM63Z736
NC
V
SS
DD
V
NC
NC
SASASA
SA
SA
SA
SA
MCM63Z736DMCM63Z818 2
MOTOROLA FAST SRAM
PIN ASSIGNMENT
V
DDQ
DQb DQb
V
DDQ
DQb DQb V V V
DQb DQb
V
DDQ
DQb DQb DQb
V
DDQ
SASASE1
SE2
NC
NC
NC
1
NC
2
NC
3 4
V
5
SS
NC
6
NC
7 8
9
V
V
V
V
SS
DD DD DD
SS
SS
NC
SS
NC NC NC
10 11 12 13 14 15 16 17 18 19 20
21 22 23 24 25 26 27 28 29 30
31 3233
94 93979695 89889291 90 8685871009998 81828384
3738343536 42433940 41 454644
SBb
SBa
SE3
DD
CKE
G
SW
CK
VSSV
ADV
NC
NC
SA
50494847
80 79 78 77 76 75 74 73 72 71
70 69
68 67 66 65 64 63 62 61 60 59 58 57 56
55 54 53
52 51
SA
SA NC NC V
DDQ V
SS NC
DQa DQa DQa V
SS V
DDQ DQa DQa V
SS V
DD V
DD V
SS DQa
DQa V
DDQ V
SS DQa
DQa NC NC
V
SS V
DDQ NC
NC NC
SASASA
LBO
SA
NC
SA1
SA0
TOP VIEW
MCM63Z818
NC
V
SS
DD
V
NC
NC
SASASA
SA
SA
SA
SA
MOTOROLA FAST SRAM
MCM63Z736DMCM63Z818
3
MCM63Z736 PIN DESCRIPTIONS
Pin Locations Symbol Type Description
85 ADV Input Synchronous Load/Advance: Loads a new address into counter when
89 CK Input Clock: This signal registers the address, data in, and all control signals
87 CKE Input Clock Enable: Disables the CK input when CKE is high.
(a) 51, 52, 53, 56, 57, 58, 59, 62, 63 (b) 68, 69, 72, 73, 74, 75, 78, 79, 80 (c) 1, 2, 3, 6, 7, 8, 9, 12, 13 (d) 18, 19, 22, 23, 24, 25, 28, 29, 30
86 G Input Asynchronous Output Enable. 31 LBO Input Linear Burst Order Input: This pin must remain in steady state (this
32, 33, 34, 35, 44, 45, 46,
47, 48, 49, 50, 81, 82, 99, 100
36, 37 SA0, SA1 Input Synchronous Burst Address Inputs: The two LSB’s of the address field.
93, 94, 95, 96
(a) (b) (c) (d)
98 SE1 Input Synchronous Chip Enable: Active low to enable chip. 97 SE2 Input Synchronous Chip Enable: Active high for depth expansion. 92 SE3 Input Synchronous Chip Enable: Active low for depth expansion. 88 SW Input Synchronous Write: This signal writes only those bytes that have been
14, 15, 16, 41, 65, 66, 91 V
4, 11, 20, 27, 54, 61, 70, 77 V
5, 10, 17, 21, 26, 40,
55, 60, 64, 67, 71, 76, 90
38, 39, 42, 43, 83, 84 NC No Connection: There is no connection to the chip.
low. RAM uses internally generated burst addresses when high.
except G
DQx I/O Synchronous Data I/O: “x” refers to the byte being read or written
SA Input Synchronous Address Inputs: These inputs are registered and must
SBx Input Synchronous Byte Write Inputs: Enables write to byte “x”
DD
DDQ
V
SS
Supply Core Power Supply. Supply I/O Power Supply. Supply Ground.
(byte a, b, c, d).
signal not registered or latched). It must be tied high or low. Low – linear burst counter. High – interleaved burst counter.
meet setup and hold times.
These pins must preset the burst address counter values. These inputs are registered and must meet setup and hold times.
(byte a, b, c, d) in conjunction with SW
selected using the byte write SBx
and LBO.
. Has no effect on read cycles.
pins.
MCM63Z736DMCM63Z818 4
MOTOROLA FAST SRAM
MCM63Z818 PIN DESCRIPTIONS
Pin Locations Symbol Type Description
85 ADV Input Synchronous Load/Advance: Loads a new address into counter when
89 CK Input Clock: This signal registers the address, data in, and all control signals
87 CKE Input Clock Enable: Disables the CK input when CKE is high.
(a) 58, 59, 62, 63, 68, 69, 72, 73, 74 (b) 8, 9, 12, 13, 18, 19, 22, 23, 24
86 G Input Asynchronous Output Enable. 31 LBO Input Linear Burst Order Input: This pin must remain in steady state (this
32, 33, 34, 35, 44, 45, 46,
47, 48, 49, 50, 80, 81, 82, 99, 100
36, 37 SA0, SA1 Input Synchronous Burst Address Inputs: The two LSB’s of the address field.
93, 94
(a) (b)
98 SE1 Input Synchronous Chip Enable: Active low to enable chip. 97 SE2 Input Synchronous Chip Enable: Active high for depth expansion. 92 SE3 Input Synchronous Chip Enable: Active low for depth expansion. 88 SW Input Synchronous Write: This signal writes only those bytes that have been
14, 15, 16, 41, 65, 66, 91 V
4, 11, 20, 27, 54, 61, 70, 77 V
5, 10, 17, 21, 26, 40,
55, 60, 64, 67, 71, 76, 90
1, 2, 3, 6, 7, 25, 28, 29, 30,
38, 39, 42, 43, 51, 52, 53, 56, 57,
75, 78, 79, 83, 84, 95, 96
low. RAM uses internally generated burst addresses when high.
except G
DQx I/O Synchronous Data I/O: “x” refers to the byte being read or written
SA Input Synchronous Address Inputs: These inputs are registered and must
SBx Input Synchronous Byte Write Inputs: Enables write to byte “x”
DD
DDQ
V
SS
NC No Connection: There is no connection to the chip.
Supply Core Power Supply. Supply I/O Power Supply. Supply Ground.
(byte a, b).
signal not registered or latched). It must be tied high or low. Low – linear burst counter. High – interleaved burst counter.
meet setup and hold times.
These pins must preset the burst address counter values. These inputs are registered and must meet setup and hold times.
(byte a, b) in conjunction with SW
selected using the byte write SBx
and LBO.
. Has no effect on read cycles.
pins.
MOTOROLA FAST SRAM
MCM63Z736DMCM63Z818
5
TRUTH TABLE
SA0 –
CK CKE E SW SBx ADV
L–H 1 X X X X X Hold H 1, 2 L–H 0 False X X 0 X Deselect D 1, 2 L–H 0 True 0 V 0 V Load Address, New Write W 1, 2, 3,
L–H 0 True 1 X 0 V Load Address, New Read R 1, 2 L–H 0 X X
NOTES:
1. X = don‘t care, 1 = logic high, 0 = logic low, V = valid signal, according to AC Operating Conditions and Characteristics.
2. E = true if SE1
3. Byte write enables, SBx
4. No control inputs except CKE
5. A write with SBx
6. A burst write with SBx
7. ADV controls whether the RAM enters burst mode. If the previous cycle was a write, then ADV = 1 results in a burst write. If the previous cycle is a read, then ADV = 1 results in a burst read. ADV = 1 will also continue a deslect cycle.
and SE3 = 0, and SE2 = 1.
are evaluated only as new write addresses are loaded.
, SBx, and ADV are recognized in a clock cycle where ADV is sampled high.
not valid does load addresses.
not valid does increment address.
V (W)
X (R, D) Continue
1 X
SAx
Next Operation
Burst
Input Command
Code
B 1, 2, 4,
Notes
4, 5
6, 7
WRITE TRUTH TABLE
SBc
Cycle Type SW SBa SBb
Read H X X X X Write Byte a L L H H H Write Byte b L H L H H Write Byte c (See Note 1) L H H L H Write Byte d (See Note 1) L H H H L Write All Bytes L L L L L
NOTE:
1. Valid only for MCM63Z736.
(See Note 1)
SBd
(See Note 1)
LINEAR BURST ADDRESS TABLE (LBO = V
1st Address (External)
X . . . X00 X . . . X01 X . . . X10 X . . . X11 X . . . X01 X . . . X10 X . . . X11 X . . . X00 X . . . X10 X . . . X11 X . . . X00 X . . . X01 X . . . X11 X . . . X00 X . . . X01 X . . . X10
2nd Address (Internal) 3rd Address (Internal) 4th Address (Internal)
INTERLEAVED BURST ADDRESS TABLE (LBO = V
1st Address (External) 2nd Address (Internal) 3rd Address (Internal) 4th Address (Internal)
X . . . X00 X . . . X01 X . . . X10 X . . . X11 X . . . X01 X . . . X00 X . . . X11 X . . . X10 X . . . X10 X . . . X11 X . . . X00 X . . . X01 X . . . X11 X . . . X10 X . . . X01 X . . . X00
SS
)
)
DD
MCM63Z736DMCM63Z818 6
MOTOROLA FAST SRAM
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