Motorola MC74HCT174AN, MC74HCT174AD Datasheet

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SEMICONDUCTOR TECHNICAL DATA

1

REV 6

 Motorola, Inc. 1995

10/95

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High–Performance Silicon–Gate CMOS

The MC74HCT174A is identical in pinout to the LS174. This device may
be used as a level converter for interfacing TTL or NMOS outputs to High
Speed CMOS inputs.

This device consists of six D flip–flops with common Clock and Reset
inputs. Each flip–flop is loaded with a low–to–high transition of the Clock
input. Reset is asynchronous and active–low.

• Output Drive Capability: 10 LSTTL Loads

• TTL NMOS Compatible Input Levels

• Outputs Directly Interface to CMOS, NMOS and TTL

• Operating Voltage Range: 4.5 to 5.5 V

• Low Input Current: 1.0 µA

• In Compliance with the Requirements Defined by JEDEC Standard

No. 7A

• Chip Complexity: 178 FETs or 44.5 Equivalent Gates

LOGIC DIAGRAM

PIN 16 = V

CC

PIN 8 = GND

3
4

6
11
13
14

2
5

7
10
12
15

D0
D1
D2
D3
D4
D5

Q0
Q1

Q2
Q3
Q4
Q5

CLOCK

9

RESET

1

DATA

INPUTS

NONINVERTING

OUTPUTS

Design Criteria

Value

Units

Internal Gate Count*

44.5

ea.

Internal Gate Propagation Delay

1.5

ns

Internal Gate Power Dissipation

0.005

µW

Speed Power Product

0.0075

pJ

*Equivalent to a two–input NAND gate.

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PIN ASSIGNMENT

FUNCTION TABLE

13

14

15

16

9

10

11

125

4

3

2

1

8

7

6

Q4

D4

D5

Q5

V

CC

CLOCK

Q3

D3

D1

D0

Q0

RESET

GND

Q2

D2

Q1

Inputs Output

Reset Clock D Q

L X X L
H H H
H L L
H L X No Change
H X No Change

D SUFFIX

SOIC PACKAGE

CASE 751B–05

N SUFFIX

PLASTIC PACKAGE

CASE 648–08

1

16

1

16

ORDERING INFORMATION

MC74HCXXXAN
MC74HCXXXAD

Plastic
SOIC

MC74HCT174A

MOTOROLA High–Speed CMOS Logic Data

DL129 — Rev 6

2

MAXIMUM RATINGS*

Symbol

Parameter

Value

Unit

V

CC

DC Supply Voltage (Referenced to GND)

– 0.5 to + 7.0

V

V

in

DC Input Voltage (Referenced to GND)

– 1.5 to VCC + 1.5

V

V

out

DC Output Voltage (Referenced to GND)

– 0.5 to VCC + 0.5

V

I

in

DC Input Current, per Pin

± 20

mA

I

out

DC Output Current, per Pin

± 25

mA

I

CC

DC Supply Current, VCC and GND Pins

± 50

mA

P

D

Power Dissipation in Still Air Plastic DIP†

SOIC Package†

750
500

mW

T

stg

Storage Temperature

– 65 to + 150

_

C

T

L

Lead Temperature, 1 mm from Case for 10 Seconds

(Plastic DIP or SOIC Package)

260

_

C

*Maximum Ratings are those values beyond which damage to the device may occur.

Functional operation should be restricted to the Recommended Operating Conditions.

†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C

SOIC Package: – 7 mW/_C from 65_ to 125_C

For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Min

Max

Unit

V

CC

DC Supply Voltage (Referenced to GND)

4.5

5.5

V

Vin, V

out

DC Input Voltage, Output Voltage
(Referenced to GND)

0

V

CC

V

T

A

Operating Temperature, All Package Types

– 55

+ 125

_

C

tr, t

f

Input Rise and Fall Time (Figure 1)

0

500

ns

DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

Guaranteed Limit

Symbol

Parameter

Test Conditions

V

CC
V

– 55 to

25_C

85_C

125_C

Unit

V

IH

Minimum High–Level Input
Voltage

V

out

= 0.1 or VCC – 0.1 V

|I

out

| v 20 µA

4.5

5.5

2.0

2.0

2.0

2.0

2.0

2.0

V

V

IL

Maximum Low–Level Input
Voltage

V

out

= 0.1 or VCC – 0.1 V

|I

out

| v 20 µA

4.5

5.5

0.8

0.8

0.8

0.8

0.8

0.8

V

V

OH

Minimum High–Level Output
Voltage

Vin = VIH or V

IL

|I

out

| v 20 µA

4.5

5.5

4.4

5.4

4.4

5.4

4.4

5.4

V

Vin = VIH or V

IL

|I

out

| v 4.0 mA

4.5

3.98

3.84

3.70

V

OL

Maximum Low–Level Output
Voltage

Vin = VIH or V

IL

|I

out

| v 20 µA

4.5

5.5

0.1

0.1

0.1

0.1

0.1

0.1

V

Vin = VIH or V

IL

|I

out

| v 4.0 mA

4.5

0.26

0.33

0.4

I

in

Maximum Input Leakage Current

Vin = VCC or GND

5.5

± 0.1

± 1.0

± 1.0

µA

I

CC

Maximum Quiescent Supply
Current (per Package)

Vin = VCC or GND
I

out

= 0 µA

5.5

4.0

40

160

µA

∆I

CC

Additional Quiescent Supply

Vin = 2.4 V, Any One Input

≥ – 55_C

25_C to 125_C

Current

Vin = VCC or GND, Other Inputs
l

out

= 0 µA

5.5

2.9

2.4

mA

NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).

This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir­cuit. For proper operation, Vin and
V

out

should be constrained to the

range GND v (Vin or V

out

) v VCC.

Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.